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QS6J11TR

QS6J11TR
Mfr. #:
QS6J11TR
Hersteller:
Rohm Semiconductor
Beschreibung:
IGBT Transistors MOSFET TRANS MOSFET PCH 12V 2A 6PIN
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
QS6J11TR Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Rohm Semiconductor
Produktkategorie
FETs - Arrays
Serie
QS6J11
Verpackung
Digi-ReelR Alternative Verpackung
Montageart
SMD/SMT
Paket-Koffer
SC-74, SOT-457
Technologie
Si
Betriebstemperatur
150°C (TJ)
Befestigungsart
Oberflächenmontage
Anzahl der Kanäle
2 Channel
Lieferanten-Geräte-Paket
TSMT6
Aufbau
Dual
FET-Typ
2 P-Channel (Dual)
Leistung max
600mW
Transistor-Typ
2 P-Channel
Drain-zu-Source-Spannung-Vdss
12V
Eingangskapazität-Ciss-Vds
770pF @ 6V
FET-Funktion
Logik-Level-Gate
Strom-Dauer-Drain-Id-25°C
2A
Rds-On-Max-Id-Vgs
105 mOhm @ 2A, 4.5V
Vgs-th-Max-Id
1V @ 1mA
Gate-Lade-Qg-Vgs
6.5nC @ 4.5V
Pd-Verlustleistung
600 mW
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
35 ns
Anstiegszeit
17 ns
Vgs-Gate-Source-Spannung
10 V
ID-Dauer-Drain-Strom
2 A
Vds-Drain-Source-Breakdown-Voltage
- 12 V
Rds-On-Drain-Source-Widerstand
75 mOhms
Transistor-Polarität
P-Kanal
Typische-Ausschaltverzögerungszeit
65 ns
Typische-Einschaltverzögerungszeit
10 ns
Qg-Gate-Ladung
6.5 nC
Vorwärts-Transkonduktanz-Min
2 S
Kanal-Modus
Erweiterung
Tags
QS6J11, QS6J1, QS6J, QS6
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Transistor MOSFET Array Dual P-CH 12V 2A 6-Pin SOT-457T Emboss T/R
*** Source Electronics
Trans MOSFET P-CH 12V 2A 6-Pin TSMT T/R / MOSFET 2P-CH 12V 2A TSMT6
***ronik
P+P CHANNEL MOS 2A 12V TSMT6
***Yang
Transistor MOSFET Array Dual P-CH 12V 2.5A 6-Pin TSOT-23 T/R - Tape and Reel
***emi
Dual P-Channel PowerTrench® MOSFET, 1.8V specified, -12V, -2.5A, 90mΩ
***ment14 APAC
MOSFET, PP; Transistor Polarity:P Channel; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:700mV; Power Dissipation Pd:960mW; Transistor Case Style:SuperSOT; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Continuous Drain Current Id:2.5A; Current Id Max:-2.5A; Drain Source Voltage Vds:-12V; Module Configuration:Dual; On Resistance Rds(on):90mohm; Package / Case:SuperSOT; Power Dissipation Pd:960mW; Termination Type:SMD; Voltage Vds Typ:12V; Voltage Vgs Max:-700mV; Voltage Vgs Rds on Measurement:4.5V
***rchild Semiconductor
These P-Channel 1.8V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.
***ical
Trans MOSFET N/P-CH 30V/12V 2.4A/2.5A 6-Pin SuperSOT T/R
***Yang
12V, P-CH MOSFET,30V, SYNCFET, POWER TRENCH, SSOT6 - Bulk
***ser
MOSFETs 12V P-Channel PowerTrench
***emi
P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -3.5A, 80mΩ
***eco
Transistor MOSFET P-Channel 20 Volt 3.5A 6-Pin SuperSOT
***ure Electronics
P-Channel 20 V 80 mOhm Surface Mount 2.5V Specified PowerTrench Mosfet SSOT-6
***rchild Semiconductor
This P-Channel 2.5V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications.
***el Electronic
Chip Resistor - Surface Mount 10kOhms 0402 (1005 Metric) ±5% ±200ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 10K OHM 5% 1/5W 0402
***nell
MOSFET P CH 20V 3.5A SSOT6; Transistor Polarity: P Channel; Continuous Drain Current Id: -3.5A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.08ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -800mV; Power Dissipation Pd: 1.6W; Transistor Case Style: SuperSOT; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Id Max: -3.5A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Voltage Vds Typ: -20V; Voltage Vgs Max: -800mV; Voltage Vgs Rds on Measurement: -4.5V
***Yang
Transistor MOSFET Array Dual P-CH 20V 2.3A 6-Pin TSOT-23 T/R - Tape and Reel
***emi
Dual P-Channel PowerTrench® MOSFET, 1.8V Specified, -20V, -2.3A, 115mΩ
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:2.3A; On Resistance, Rds(on):0.115ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:SuperSOT-6 ;RoHS Compliant: Yes
***rchild Semiconductor
These P-Channel 1.8V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.
***p One Stop Global
Trans MOSFET P-CH 30V 3.9A Automotive 6-Pin TSOT-26 T/R
***ure Electronics
P-Channel 30 V 105 mOhm Surface Mount Enhancement Mode Mosfet - TSOT-26
***(Formerly Allied Electronics)
30V P-Channel Enhancement MOSFET TSOT-26
***des Inc SCT
P-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 12±V VGS
***S
French Electronic Distributor since 1988
***ure Electronics
ZXMP6A17E6Q Series 60 V 2.3 A P-Channel Enhancement Mode Mosfet - SOT-23-6
***ical
Trans MOSFET P-CH 60V 2.3A Automotive 6-Pin SOT-26 T/R
***ark
Mosfet Bvdss: 41V~60V Sot26 T&r 3K Rohs Compliant: Yes
***des Inc SCT
P-CHANNEL ENHANCEMENT MODE MOSFET, 60V VDS, 20±V VGS
***nell
MOSFET, AEC-Q101, P CH, -60V, SOT-26; Transistor Polarity: P Channel; Continuous Drain Current Id: -2.3A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.1ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -3V; Power Dissipation Pd: 1.1W; Transistor Case Style: SOT-26; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
Teil # Mfg. Beschreibung Aktie Preis
QS6J11TR
DISTI # 30719429		ROHM SemiconductorTrans MOSFET P-CH 12V 2A 6-Pin TSMT T/R
RoHS: Compliant		5785
  • 1000:$0.2818
  • 500:$0.3022
  • 100:$0.3672
  • 50:$0.4411
  • 43:$0.6044
QS6J11TR
DISTI # QS6J11CT-ND		ROHM SemiconductorMOSFET 2P-CH 12V 2A TSMT6
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		8240In Stock
  • 1000:$0.2416
  • 500:$0.3127
  • 100:$0.3980
  • 10:$0.5330
  • 1:$0.6200
QS6J11TR
DISTI # QS6J11DKR-ND		ROHM SemiconductorMOSFET 2P-CH 12V 2A TSMT6
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		8240In Stock
  • 1000:$0.2416
  • 500:$0.3127
  • 100:$0.3980
  • 10:$0.5330
  • 1:$0.6200
QS6J11TR
DISTI # QS6J11TR-ND		ROHM SemiconductorMOSFET 2P-CH 12V 2A TSMT6
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		6000In Stock
  • 3000:$0.2139
QS6J11TR
DISTI # QS6J11TR		ROHM SemiconductorTrans MOSFET P-CH 12V 2A 6-Pin TSMT T/R - Tape and Reel (Alt: QS6J11TR)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 3000
    QS6J11TR
    DISTI # QS6J11TR    		ROHM SemiconductorTrans MOSFET P-CH 12V 2A 6-Pin TSMT T/R (Alt: QS6J11TR)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Europe - 0
    • 30000:€0.1229
    • 18000:€0.1319
    • 12000:€0.1559
    • 6000:€0.1909
    • 3000:€0.2459
    QS6J11TR
    DISTI # QS6J11TR    		ROHM SemiconductorTrans MOSFET P-CH 12V 2A 6-Pin TSMT T/R (Alt: QS6J11TR)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Asia - 0
      QS6J11TR
      DISTI # 755-QS6J11TR      		ROHM SemiconductorMOSFET TRANS MOSFET PCH 12V 2A 6PIN
      RoHS: Compliant      		5780
      • 1:$0.6000
      • 10:$0.4990
      • 100:$0.3040
      • 1000:$0.2350
      • 3000:$0.2300
      QS6J11TR
      DISTI # TMOSS6472      		ROHM SemiconductorP+P CHANNEL MOS 2A 12V TSMT6
      RoHS: Compliant      		Stock DE - 9000Stock HK - 0Stock US - 0
      • 3000:$0.2120
      • 6000:$0.1999
      • 9000:$0.1878
      • 12000:$0.1696
      • 18000:$0.1636
      QS6J11TRROHM Semiconductor 3000
      • 1:¥4.6262
      • 100:¥2.6231
      • 1500:¥1.6630
      • 3000:¥1.2390
      QS6J11TRROHM SemiconductorMOSFET TRANS MOSFET PCH 12V 2A 6PIN
      RoHS: Compliant      		Americas -
        Bild Teil # Beschreibung
        QS6J3TR

        Mfr.#: QS6J3TR

        OMO.#: OMO-QS6J3TR

        		 MOSFET 2P-CH 20V 1.5A
        QS6J1

        Mfr.#: QS6J1

        OMO.#: OMO-QS6J1-1190

        		 Neu und Original
        QS6J1 , LM317MKTPRG3

        Mfr.#: QS6J1 , LM317MKTPRG3

        OMO.#: OMO-QS6J1-LM317MKTPRG3-1190

        		 Neu und Original
        QS6J1 TR

        Mfr.#: QS6J1 TR

        OMO.#: OMO-QS6J1-TR-1190

        		 Neu und Original
        QS6J11 TR

        Mfr.#: QS6J11 TR

        OMO.#: OMO-QS6J11-TR-1190

        		 Neu und Original
        QS6J3

        Mfr.#: QS6J3

        OMO.#: OMO-QS6J3-1190

        		 Neu und Original
        QS6J3 TR

        Mfr.#: QS6J3 TR

        OMO.#: OMO-QS6J3-TR-1190

        		 Neu und Original
        QS6J1TR

        Mfr.#: QS6J1TR

        OMO.#: OMO-QS6J1TR-ROHM-SEMI

        		 MOSFET 2P-CH 20V 1.5A TSMT6
        QS6J3TR

        Mfr.#: QS6J3TR

        OMO.#: OMO-QS6J3TR-ROHM-SEMI

        		 MOSFET 2P-CH 20V 1.5A TSMT6
        QS6J11TR

        Mfr.#: QS6J11TR

        OMO.#: OMO-QS6J11TR-ROHM-SEMI

        		 IGBT Transistors MOSFET TRANS MOSFET PCH 12V 2A 6PIN
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        4000
        Menge eingeben:
        Der aktuelle Preis von QS6J11TR dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        0,21 $
        0,21 $
        10
        0,20 $
        1,99 $
        100
        0,19 $
        18,85 $
        500
        0,18 $
        89,05 $
        1000
        0,17 $
        167,60 $
        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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