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SIDR638DP-T1-GE3

SIDR638DP-T1-GE3
Mfr. #:
SIDR638DP-T1-GE3
Hersteller:
Vishay
Beschreibung:
MOSFET N-CH 40V 100A SO-8
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIDR638DP-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SIDR638DP-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Tags
SIDR6, SIDR, SID
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
TrenchFET Gen IV Power MOSFET N-Channel Single 40V VDS +20V -16V VGS 100A ID 8-Pin PowerPAK SOIC T/R
***i-Key
MOSFET N-CH 40V 100A SO-8
***ark
Mosfet, N-Ch, 40V, 100A, 150Deg C, 125W; Transistor Polarity:n Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(On):0.00073Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.3V; Powerrohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 40V, 100A, 150DEG C, 125W; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.00073ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.3V; Power Dissipation Pd:125W; Transistor Case Style:PowerPAK SO; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Gen IV Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CANALE N, 40V, 100A, 150°C, 125W; Polarità Transistor:Canale N; Corrente Continua di Drain Id:100A; Tensione Drain Source Vds:40V; Resistenza di Attivazione Rds(on):0.00073ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2.3V; Dissipazione di Potenza Pd:125W; Modello Case Transistor:PowerPAK SO; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:TrenchFET Gen IV Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
TrenchFET® Gen IV Top-Side Double Cooling MOSFETs
Vishay TrenchFET® Gen IV Top-Side Double Cooling MOSFETs feature top-side cooling and offer an additional venue for thermal transfer. These MOSFETs come in the PowerPAK® SO-8DC package. The TrenchFET double cooling MOSFETs offer variants with different drain-source breakdown voltages of 25V, 30V, 40V, 60V, 80V, 100V, 150V, and 200V. These N-channel MOSFETs operate at a temperature range from -55°C to 150°C. The TrenchFET MOSFETs can be utilized for product-specific applications including synchronous rectification, DC/DC conversion, power supplies, battery management, and others.
Teil # Mfg. Beschreibung Aktie Preis
SIDR638DP-T1-GE3
DISTI # SIDR638DP-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 40V 100A SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 6000:$0.9394
  • 3000:$0.9511
SIDR638DP-T1-GE3
DISTI # SIDR638DP-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 40V 100A SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$1.0522
  • 500:$1.2700
  • 100:$1.5457
  • 10:$1.9230
  • 1:$2.1400
SIDR638DP-T1-GE3
DISTI # SIDR638DP-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 40V 100A SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$1.0522
  • 500:$1.2700
  • 100:$1.5457
  • 10:$1.9230
  • 1:$2.1400
SIDR638DP-T1-GE3
DISTI # SIDR638DP-T1-GE3		Vishay IntertechnologiesTrenchFET Gen IV Power MOSFET N-Channel Single 40V VDS +20V -16V VGS 100A ID 8-Pin PowerPAK SOIC T/R (Alt: SIDR638DP-T1-GE3)
RoHS: Compliant
Min Qty: 1
Container: Tape and Reel		Europe - 0
  • 1000:€0.8569
  • 500:€0.8809
  • 100:€0.8929
  • 50:€0.9069
  • 25:€1.0209
  • 10:€1.2379
  • 1:€1.7669
SIDR638DP-T1-GE3
DISTI # SIDR638DP-T1-GE3		Vishay IntertechnologiesTrenchFET Gen IV Power MOSFET N-Channel Single 40V VDS +20V -16V VGS 100A ID 8-Pin PowerPAK SOIC T/R - Tape and Reel (Alt: SIDR638DP-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Container: Reel		Americas - 0
  • 60000:$0.8599
  • 30000:$0.8839
  • 18000:$0.9089
  • 12000:$0.9469
  • 6000:$0.9759
SIDR638DP-T1-GE3
DISTI # 59AC7339		Vishay IntertechnologiesN-CHANNEL 40-V (D-S) MOSFET0
  • 10000:$0.8390
  • 6000:$0.8730
  • 4000:$0.9060
  • 2000:$1.0100
  • 1000:$1.0600
  • 1:$1.1300
SIDR638DP-T1-GE3
DISTI # 78AC6504		Vishay IntertechnologiesMOSFET, N-CH, 40V, 100A, 150DEG C, 125W,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.00073ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.3V,PowerRoHS Compliant: Yes0
  • 500:$1.1900
  • 250:$1.2800
  • 100:$1.3600
  • 50:$1.4900
  • 25:$1.6300
  • 10:$1.7600
  • 1:$2.1100
SIDR638DP-T1-GE3
DISTI # 78-SIDR638DP-T1-GE3		Vishay IntertechnologiesMOSFET 40V Vds 20V Vgs PowerPAK SO-8DC
RoHS: Compliant		0
  • 1:$2.0900
  • 10:$1.7400
  • 100:$1.3500
  • 500:$1.1800
  • 1000:$0.9730
  • 3000:$0.9060
  • 6000:$0.8730
  • 9000:$0.8390
SIDR638DP-T1-GE3
DISTI # 2932899		Vishay IntertechnologiesMOSFET, N-CH, 40V, 100A, 150DEG C, 125W0
  • 500:£0.8650
  • 250:£0.9270
  • 100:£0.9890
  • 10:£1.2900
  • 1:£1.7400
SIDR638DP-T1-GE3
DISTI # 2932899		Vishay IntertechnologiesMOSFET, N-CH, 40V, 100A, 150DEG C, 125W
RoHS: Compliant		0
  • 1000:$1.5200
  • 500:$1.6000
  • 250:$1.8900
  • 100:$2.2900
  • 10:$2.9200
  • 1:$3.5300
Bild Teil # Beschreibung
SIDR638DP-T1-GE3

Mfr.#: SIDR638DP-T1-GE3

OMO.#: OMO-SIDR638DP-T1-GE3

 MOSFET 40V Vds 20V Vgs PowerPAK SO-8DC
SIDR638DP-T1-GE3

Mfr.#: SIDR638DP-T1-GE3

OMO.#: OMO-SIDR638DP-T1-GE3-VISHAY

 MOSFET N-CH 40V 100A SO-8
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
2000
Menge eingeben:
Der aktuelle Preis von SIDR638DP-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,26 $
1,26 $
10
1,20 $
11,96 $
100
1,13 $
113,27 $
500
1,07 $
534,85 $
1000
1,01 $
1 006,80 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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