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CG2H30070F-TB2

CG2H30070F-TB2
Mfr. #:
CG2H30070F-TB2
Hersteller:
N/A
Beschreibung:
RF JFET Transistors Test Board without GaN HEMT
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
CG2H30070F-TB2 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
CG2H30070F-TB2 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Cree, Inc.
Produktkategorie:
HF-JFET-Transistoren
RoHS:
N
Transistortyp:
HEMT
Technologie:
GaN
Gewinnen:
12 dB
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
120 V
Vgs - Gate-Source-Durchbruchspannung:
- 10 V, 2 V
Id - Kontinuierlicher Drainstrom:
12 A
Ausgangsleistung:
85 W
Maximale Drain-Gate-Spannung:
28 V
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 150 C
Montageart:
Schraubbefestigung
Paket / Koffer:
CG2H30070F
Verpackung:
Schüttgut
Aufbau:
Single
Arbeitsfrequenz:
0.5 GHz to 3 GHz
Marke:
Wolfspeed / Cree
Produktart:
HF-JFET-Transistoren
Werkspackungsmenge:
1
Unterkategorie:
Transistoren
Vgs th - Gate-Source-Schwellenspannung:
- 2.8 V
Tags
CG2H, CG2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CG2H40xx & CG2H30xx GaN HEMTs
Wolfspeed / Cree CG2H40xx and CG2H30xx GaN HEMTs are high electron mobility transistors operate from 28V rail. The CG2H40xx and CG2H30xx transistors offer a general purpose broadband solution to a variety of RF and microwave applications. The high efficiency, high gain, and wide bandwidth capabilities of these HEMTs make it ideal for linear and compressed amplifier circuits. The CG2H40xx and CG2H30xx transistors are available in different packages which includes screw down, flange, solder down, pill packages, and 2-lead flange packages. Typical applications include broadband amplifiers, cellular infrastructure, and radar.Learn more
Teil # Mfg. Beschreibung Aktie Preis
CG2H30070F-TB2
DISTI # CG2H30070F-TB2-ND		WolfspeedRF EVAL DEV KITS ISM
RoHS: Not compliant
Min Qty: 1
Container: Bulk		On Order
  • 1:$862.5000
CG2H30070F-TB2
DISTI # 941-CG2H30070FTB2		Cree, Inc.RF JFET Transistors Test Board without GaN HEMT
RoHS: Not compliant		0
  • 1:$862.5000
CG2H30070F-TB2
DISTI # CG2H30070F-TB2		WolfspeedRF TRANSISTOR TEST FIXTURE
RoHS: Compliant		0
  • 1:$862.5000
Bild Teil # Beschreibung
CG2H30070F

Mfr.#: CG2H30070F

OMO.#: OMO-CG2H30070F

 RF JFET Transistors GaN HEMT DC-2.0GHz, 60 Watt
CG2H30070F-TB2

Mfr.#: CG2H30070F-TB2

OMO.#: OMO-CG2H30070F-TB2

 RF JFET Transistors Test Board without GaN HEMT
CG2H30070F

Mfr.#: CG2H30070F

OMO.#: OMO-CG2H30070F-WOLFSPEED

 RF MOSFET HEMT 28V
CG2H30070F-TB2

Mfr.#: CG2H30070F-TB2

OMO.#: OMO-CG2H30070F-TB2-WOLFSPEED

 RF EVAL DEV KITS ISM
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1000
Menge eingeben:
Der aktuelle Preis von CG2H30070F-TB2 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
862,50 $
862,50 $
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