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IRF9410TRPBF

IRF9410TRPBF
Mfr. #:
IRF9410TRPBF
Hersteller:
Infineon / IR
Beschreibung:
MOSFET MOSFT 30V 7A 30mOhm 18nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF9410TRPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF9410TRPBF DatasheetIRF9410TRPBF Datasheet (P4-P6)IRF9410TRPBF Datasheet (P7)
ECAD Model:
Mehr Informationen:
IRF9410TRPBF Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SO-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
7 A
Rds On - Drain-Source-Widerstand:
50 mOhms
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
18 nC
Pd - Verlustleistung:
2.5 W
Aufbau:
Single
Verpackung:
Spule
Höhe:
1.75 mm
Länge:
4.9 mm
Transistortyp:
1 N-Channel
Breite:
3.9 mm
Marke:
Infineon / IR
Produktart:
MOSFET
Werkspackungsmenge:
4000
Unterkategorie:
MOSFETs
Teil # Aliase:
SP001551686
Gewichtseinheit:
0.019048 oz
Tags
IRF9410TRP, IRF9410T, IRF941, IRF94, IRF9, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    U***I
    U***I
    US

    Yu

    2019-06-25
    C***e
    C***e
    RO

    Thank you!

    2019-01-11
    R***e
    R***e
    CL

    excelente

    2019-05-25
    E***v
    E***v
    UA

    Thank you, I am very pleased

    2019-03-22
***ied Electronics & Automation
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.03Ohm;ID 7A;SO-8;PD 2.5W;VGS +/-20V;gFS 14
***ure Electronics
Single N-Channel 30 V 0.03 Ohm 18 nC HEXFET® Power Mosfet - SOIC-8
*** Source Electronics
Trans MOSFET N-CH Si 30V 7A 8-Pin SOIC Tube / MOSFET N-CH 30V 7A 8-SOIC
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ark
N Channel Mosfet, 30V, 7A, Soic; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:7A; On Resistance Rds(On):0.03Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
***nell
MOSFET, N, LOGIC, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.03ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 7A; Current Temperature: 25°C; External Depth: 5.2mm; External Length / Height: 1.75mm; External Width: 4.05mm; Full Power Rating Temperature: 25°C; Junction Temperature Tj Min: -55°C; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pin Configuration: a; Pin Format: 1 NC; 2 S; 3 S; 4 G; 5 D; 6 D; 7 D; 8 D; Pulse Current Idm: 37A; Row Pitch: 6.3mm; SMD Marking: F9410; Voltage Vds Typ: 30V; Voltage Vgs Max: 1V; Voltage Vgs Rds on Measurement: 10V
30V HEXFET® Power MOSFETs
Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More
Teil # Mfg. Beschreibung Aktie Preis
IRF9410TRPBF
DISTI # V72:2272_13890171		Infineon Technologies AGTrans MOSFET N-CH Si 30V 7A 8-Pin SOIC T/R2712
  • 1000:$0.2306
  • 500:$0.2793
  • 250:$0.2824
  • 100:$0.2854
  • 25:$0.3940
  • 10:$0.3988
  • 1:$0.4597
IRF9410TRPBF
DISTI # IRF9410PBFTR-ND		Infineon Technologies AGMOSFET N-CH 30V 7A 8-SOIC
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 4000:$0.2720
IRF9410TRPBF
DISTI # 30266180		Infineon Technologies AGTrans MOSFET N-CH Si 30V 7A 8-Pin SOIC T/R4000
  • 4000:$0.2592
IRF9410TRPBF
DISTI # 30559157		Infineon Technologies AGTrans MOSFET N-CH Si 30V 7A 8-Pin SOIC T/R2712
  • 1000:$0.2306
  • 500:$0.2793
  • 250:$0.2824
  • 100:$0.2854
  • 37:$0.3940
IRF9410TRPBF
DISTI # IRF9410TRPBF		Infineon Technologies AGTrans MOSFET N-CH 30V 7A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF9410TRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Reel		Americas - 0
  • 4000:$0.1959
  • 8000:$0.1889
  • 16000:$0.1819
  • 24000:$0.1759
  • 40000:$0.1729
IRF9410TRPBF
DISTI # SP001551686		Infineon Technologies AGTrans MOSFET N-CH 30V 7A 8-Pin SOIC T/R (Alt: SP001551686)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel		Europe - 0
  • 4000:€0.2569
  • 8000:€0.2099
  • 16000:€0.1929
  • 24000:€0.1779
  • 40000:€0.1649
IRF9410TRPBF
DISTI # 32AC7477		Infineon Technologies AGMOSFET, N-CH, 40V, 7A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:7A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.024ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V,Power Dissipation , RoHS Compliant: Yes4104
  • 1:$0.6300
  • 10:$0.5200
  • 25:$0.4600
  • 50:$0.4000
  • 100:$0.3400
  • 250:$0.3170
  • 500:$0.2930
  • 1000:$0.2700
IRF9410TRPBF
DISTI # 70017729		Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 30V,RDS(ON) 0.03Ohm,ID 7A,SO-8,PD 2.5W,VGS +/-20V,gFS 14
RoHS: Compliant		0
  • 4000:$0.2900
IRF9410TRPBF
DISTI # 942-IRF9410TRPBF		Infineon Technologies AGMOSFET MOSFT 30V 7A 30mOhm 18nC
RoHS: Compliant		5159
  • 1:$0.6300
  • 10:$0.5200
  • 100:$0.3400
  • 1000:$0.2700
  • 4000:$0.2300
  • 8000:$0.2200
  • 24000:$0.2100
IRF9410TRPBF
DISTI # 1623278		Infineon Technologies AGMOSFET N-CH 30V 7A HEXFET SOIC8, RL7880
  • 4000:£0.1740
  • 8000:£0.1670
  • 12000:£0.1620
IRF9410TRPBF
DISTI # 2777384		Infineon Technologies AGMOSFET, N-CH, 40V, 7A, SOIC
RoHS: Compliant		4104
  • 5:$0.8550
  • 25:$0.7450
  • 100:$0.6080
IRF9410TRPBF
DISTI # 2777384		Infineon Technologies AGMOSFET, N-CH, 40V, 7A, SOIC
RoHS: Compliant		4109
  • 5:£0.4100
  • 25:£0.3360
  • 100:£0.2620
  • 250:£0.2490
  • 500:£0.2360
IRF9410TRPBF
DISTI # C1S322000595136		Infineon Technologies AGTrans MOSFET N-CH Si 30V 7A 8-Pin SOIC T/R
RoHS: Compliant		2800
  • 250:$0.2824
  • 100:$0.2854
  • 25:$0.3940
  • 10:$0.3988
IRF9410TRPBF
DISTI # C1S322000585759		Infineon Technologies AGTrans MOSFET N-CH Si 30V 7A 8-Pin SOIC T/R
RoHS: Compliant		4000
  • 4000:$0.2810
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OMO.#: OMO-ADUM260N0BRIZ

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 Thick Film Resistors - SMD 1/3watt 100ohms 1% 100ppm High Powe
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Mfr.#: LM4675SD/NOPB

OMO.#: OMO-LM4675SD-NOPB-TEXAS-INSTRUMENTS

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Mfr.#: CRCW080510K0FKEAC

OMO.#: OMO-CRCW080510K0FKEAC-VISHAY-DALE

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ERJ-U02F31R6X

Mfr.#: ERJ-U02F31R6X

OMO.#: OMO-ERJ-U02F31R6X-1090

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CRCW0402100RFKEDC

Mfr.#: CRCW0402100RFKEDC

OMO.#: OMO-CRCW0402100RFKEDC-VISHAY-DALE

 D10/CRCW0402-C 100 100R 1% ET7
ADUM260N0BRIZ

Mfr.#: ADUM260N0BRIZ

OMO.#: OMO-ADUM260N0BRIZ-ANALOG-DEVICES

 DGTL ISO 5KV 6CH GEN PRP 16SOIC
RK73H1JTTD6192F

Mfr.#: RK73H1JTTD6192F

OMO.#: OMO-RK73H1JTTD6192F-1090

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RK73H1JTTD8252F

Mfr.#: RK73H1JTTD8252F

OMO.#: OMO-RK73H1JTTD8252F-1090

 Thick Film Resistors - SMD 1/10watts 82.5Kohms
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1987
Menge eingeben:
Der aktuelle Preis von IRF9410TRPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,63 $
0,63 $
10
0,53 $
5,29 $
100
0,34 $
34,10 $
1000
0,27 $
273,00 $
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