BC337-25RL1G

BC337-25RL1G
Mfr. #:
BC337-25RL1G
Hersteller:
ON Semiconductor
Beschreibung:
Bipolar Transistors - BJT 800mA 50V NPN
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BC337-25RL1G Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
BC337-25RL1G DatasheetBC337-25RL1G Datasheet (P4-P5)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
Bipolartransistoren - BJT
RoHS:
Y
Montageart:
Durchgangsloch
Paket / Koffer:
TO-92-3
Polarität des Transistors:
NPN
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
45 V
Kollektor- Basisspannung VCBO:
50 V
Emitter- Basisspannung VEBO:
5 V
Kollektor-Emitter-Sättigungsspannung:
0.7 V
Maximaler DC-Kollektorstrom:
0.8 A
Bandbreitenprodukt fT gewinnen:
210 MHz
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Serie:
BC337-25
Höhe:
5.33 mm
Länge:
5.2 mm
Verpackung:
Spule
Breite:
4.19 mm
Marke:
ON Semiconductor
Kontinuierlicher Kollektorstrom:
0.8 A
DC-Kollektor/Basisverstärkung hfe Min:
160
Pd - Verlustleistung:
625 mW
Produktart:
BJTs - Bipolartransistoren
Werkspackungsmenge:
2000
Unterkategorie:
Transistoren
Tags
BC337-25R, BC337-25, BC337-2, BC337, BC33, BC3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***nsix Microsemi
Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
***ical
Trans GP BJT NPN 45V 0.8A 625mW 3-Pin TO-92 T/R
***ark
RF Bipolar Transistor; Transistor Type:RF Bipolar; Transistor Polarity:NPN; Package/Case:TO-92; DC Current Gain Min (hfe):400; Frequency Min:0.625MHz; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
***ment14 APAC
RF TRANSISTOR, NPN 45V 210MHZ TO-92; Tra; RF TRANSISTOR, NPN 45V 210MHZ TO-92; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:210MHz; Power Dissipation Pd:625mW; DC Collector Current:800mA; DC Current Gain hFE:160; No. of Pins:3
***nsix Microsemi
Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
***ical
Trans GP BJT NPN 45V 0.8A 625mW 3-Pin TO-92 Fan-Fold
***ponent Stockers USA
800 mA 45 V NPN Si SMALL SIGNAL TRANSISTOR TO-92
***ment14 APAC
Transistor, NPN, 45V, TO-92; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:210MHz; Power Dissipation
***nell
TRANSISTOR, NPN, TO-92; Transistor Type:Bipolar; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:45V; Current Ic Continuous a Max:0.8A; Voltage, Vce Sat Max:0.7V; Power Dissipation:625mW; Min Hfe:160; ft, Typ:210MHz; Case Style:TO-92; Termination Type:Through Hole; Current Ic Max:0.8A; Current Ic hFE:100mA; No. of Pins:3; Pin Configuration:d; Power, Ptot:625mW; Transistors, No. of:1; Voltage, Vcbo:50V; ft, Min:60MHz
***r Electronics
Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
***ical
Trans GP BJT NPN 45V 0.8A 625mW 3-Pin TO-92 Box
*** Electronics
Bipolar Transistors - BJT 800mA 50V NPN
***ark
BIPOLAR TRANSISTOR, NPN, 45V; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:45V; Transition Frequency Typ, ft:210MHz; Power Dissipation, Pd:625mW; Operating Temperature Range:-55°C to +150°C ;RoHS Compliant: Yes
***r Electronics
Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
***ical
Trans GP BJT NPN 45V 0.8A 625mW 3-Pin TO-92 Box
***ark
RF Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:45V; Collector Emitter Saturation Voltage, Vce(sat):100V; Power Dissipation, Pd:0.625W; DC Current Gain Min (hfe):100; Package/Case:TO-92 ;RoHS Compliant: Yes
Teil # Mfg. Beschreibung Aktie Preis
BC337-25RL1G
DISTI # V36:1790_16963768
ON SemiconductorTrans GP BJT NPN 45V 0.8A 3-Pin TO-92 T/R143400
  • 10000:$0.0260
  • 4000:$0.0270
  • 2000:$0.0290
BC337-25RL1G
DISTI # VAH:2490_16963768
ON SemiconductorTrans GP BJT NPN 45V 0.8A 3-Pin TO-92 T/R58
  • 25:$0.5400
  • 1:$0.6200
BC337-25RL1G
DISTI # BC337-25RL1GOSTR-ND
ON SemiconductorTRANS NPN 45V 0.8A TO-92
RoHS: Compliant
Min Qty: 6000
Container: Tape & Reel (TR)
Limited Supply - Call
    BC337-25RL1G
    DISTI # BC337-25RL1GOSCT-ND
    ON SemiconductorTRANS NPN 45V 0.8A TO-92
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      BC337-25RL1G
      DISTI # 27517675
      ON SemiconductorTrans GP BJT NPN 45V 0.8A 3-Pin TO-92 T/R142000
      • 10000:$0.0260
      • 4000:$0.0270
      • 2000:$0.0290
      BC337-25RL1G
      DISTI # 26077619
      ON SemiconductorTrans GP BJT NPN 45V 0.8A 3-Pin TO-92 T/R58
      • 25:$0.5400
      • 11:$0.6200
      BC337-25RL1G
      DISTI # 70465808
      ON SemiconductorBC337-25RL1G,SS T092 GP XSTR NPN 45V
      RoHS: Compliant
      0
      • 200:$0.1310
      • 500:$0.1300
      • 800:$0.1290
      • 1200:$0.1270
      BC337-25RL1G
      DISTI # 863-BC337-25RL1G
      ON SemiconductorBipolar Transistors - BJT 800mA 50V NPN
      RoHS: Compliant
      0
        BC337-25RL1
        DISTI # 863-BC337-25RL1
        ON SemiconductorBipolar Transistors - BJT 800mA 50V NPN
        RoHS: Not compliant
        0
          BC337-25RL1GON Semiconductor 
          RoHS: Not Compliant
          161589
          • 500:$0.0900
          • 1000:$0.0900
          • 25:$0.1000
          • 100:$0.1000
          • 1:$0.1100
          BC337-25RL1G
          DISTI # 1886790
          ON SemiconductorRF TRANSISTOR, NPN 45V 210MHZ TO-92
          RoHS: Compliant
          0
          • 1:$0.6020
          • 10:$0.3400
          • 100:$0.1450
          • 1000:$0.1130
          • 2000:$0.0880
          • 10000:$0.0780
          • 24000:$0.0740
          • 50000:$0.0650
          Bild Teil # Beschreibung
          BC337-40 A1

          Mfr.#: BC337-40 A1

          OMO.#: OMO-BC337-40-A1

          Bipolar Transistors - BJT NPN Transistor
          BC337-16 B1G

          Mfr.#: BC337-16 B1G

          OMO.#: OMO-BC337-16-B1G

          Bipolar Transistors - BJT TO-92, 50V 0.8A NPN Bplr Trans
          BC337-25 TRE

          Mfr.#: BC337-25 TRE

          OMO.#: OMO-BC337-25-TRE

          Bipolar Transistors - BJT 50Vcbo 45Vceo NPN 5.0Vebo 800mA 625mW
          BC337-25ZL1

          Mfr.#: BC337-25ZL1

          OMO.#: OMO-BC337-25ZL1

          Bipolar Transistors - BJT 800mA 50V NPN
          BC337-40-BULK

          Mfr.#: BC337-40-BULK

          OMO.#: OMO-BC337-40-BULK-1190

          Transistor: NPN, bipolar, 50V, 0.8A, 625mW, TO92
          BC337-40,116

          Mfr.#: BC337-40,116

          OMO.#: OMO-BC337-40-116-NXP-SEMICONDUCTORS

          TRANS NPN 45V 0.5A TO-92
          BC337-25RL

          Mfr.#: BC337-25RL

          OMO.#: OMO-BC337-25RL-1190

          Neu und Original
          BC337-40 TO-92 CJ

          Mfr.#: BC337-40 TO-92 CJ

          OMO.#: OMO-BC337-40-TO-92-CJ-1190

          Neu und Original
          BC337-40BU

          Mfr.#: BC337-40BU

          OMO.#: OMO-BC337-40BU-1190

          Neu und Original
          BC337-40RL1G

          Mfr.#: BC337-40RL1G

          OMO.#: OMO-BC337-40RL1G-ON-SEMICONDUCTOR

          Bipolar Transistors - BJT 800mA 50V NPN
          Verfügbarkeit
          Aktie:
          Available
          Auf Bestellung:
          5000
          Menge eingeben:
          Der aktuelle Preis von BC337-25RL1G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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