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If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| SQJ401EP-T1-GE3 DISTI # V36:1790_14140679 | Vishay Intertechnologies | P-CHANNEL 12-V (D-S) 175C MOSF | 0 |
|
| SQJ401EP-T1_GE3 DISTI # SQJ401EP-T1_GE3 | Vishay Intertechnologies | Trans MOSFET P-CH 12V 32A 5-Pin(4+Tab) PowerPAK SO T/R (Alt: SQJ401EP-T1_GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel | Europe - 0 |
|
| SQJ401EP-T1_GE3 DISTI # SQJ401EP-T1_GE3 | Vishay Intertechnologies | Trans MOSFET P-CH 12V 32A 5-Pin(4+Tab) PowerPAK SO T/R - Tape and Reel (Alt: SQJ401EP-T1_GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel | Americas - 0 |
|
| SQJ401EP-T1_GE3 DISTI # 76Y1527 | Vishay Intertechnologies | P-CHANNEL 12-V (D-S) 175C MOSFET | 0 |
|
| SQJ401EP-T1_GE3 DISTI # 78-SQJ401EP-T1_GE3 | Vishay Intertechnologies | MOSFET P-Channel 12V AEC-Q101 Qualified RoHS: Compliant | 10054 |
|
| SQJ401EP-T1-GE3 DISTI # 78-SQJ401EP-T1-GE3 | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 78-SQJ401EP-T1_GE3 RoHS: Compliant | 0 | |
| SQJ401EPT1GE3 | Vishay Intertechnologies | Power Field-Effect Transistor, 32A I(D), 12V, 0.008ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 6000 |
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: SQJ401EP-T1_GE3 OMO.#: OMO-SQJ401EP-T1-GE3 |
MOSFET P-Channel 12V AEC-Q101 Qualified |
|
Mfr.#: SQJ401EP-T2_GE3 OMO.#: OMO-SQJ401EP-T2-GE3 |
MOSFET RECOMMENDED ALT 78-SQJ411EP-T1_GE3 |
|
Mfr.#: SQJ401EP-T1-GE3 OMO.#: OMO-SQJ401EP-T1-GE3-317 |
RF Bipolar Transistors MOSFET P-Channel 12V Automotive MOSFET |
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Mfr.#: SQJ401EP-T1_GE3 OMO.#: OMO-SQJ401EP-T1-GE3-VISHAY |
MOSFET P-CH 12V 32A POWERPAKSO-8 |
|
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Mfr.#: SQJ401EP-T1 OMO.#: OMO-SQJ401EP-T1-1190 |
Neu und Original |
|
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Mfr.#: SQJ401EPT1GE3 OMO.#: OMO-SQJ401EPT1GE3-1190 |
Power Field-Effect Transistor, 32A I(D), 12V, 0.008ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |