RQ3E100GNTB

Mfr. #:: RQ3E100GNTB
Hersteller:: Rohm Semiconductor
Beschreibung:: MOSFET 4.5V Drive Nch MOSFET
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: RQ3E100GNTB Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:: RQ3E100GNTB Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller:: ROHM Halbleiter

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: HSMT-8

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 30 V

Id - Kontinuierlicher Drainstrom:: 10 A

Rds On - Drain-Source-Widerstand:: 11.7 mOhms

Vgs th - Gate-Source-Schwellenspannung:: 2.5 V

Vgs - Gate-Source-Spannung:: 20 V

Qg - Gate-Ladung:: 7.9 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Pd - Verlustleistung:: 2 W

Aufbau:: Single

Verpackung:: Spule

Transistortyp:: 1 N-Channel

Marke:: ROHM Halbleiter

Vorwärtstranskonduktanz - Min:: 8 S

Abfallzeit:: 3.1 ns

Produktart:: MOSFET

Anstiegszeit:: 4.3 ns

Werkspackungsmenge:: 3000

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 22.4 ns

Typische Einschaltverzögerungszeit:: 8.4 ns

Teil # Aliase:: RQ3E100GN

Tags: RQ3E100G, RQ3E10, RQ3E1, RQ3E, RQ3

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

RQ3E100GNTB Beschreibung

***p One Stop Japan: Trans MOSFET N-CH 30V 10A 8-Pin HSMT T/R

***et: 4.5V DRIVE NCH MOSFET, HSMT8, NCH, DISCRETE

***ark: Mosfet, N-Ch, 30V, 21A, Hsmt-8; Transistor Polarity:n Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.0089Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Rohs Compliant: Yes

RQ3E100GNTB Mehr Informationen

Silicon Power MOSFETs: ROHM Semiconductor Silicon Power MOSFETs feature ultrafast switching speeds and low on-resistance. The MOSFETs are available in a wide lineup of packages, including the miniature 0604 package, for space saving in designs.

Medium Power MOSFETs: ROHM Medium Power MOSFETs are low ON-resistance devices useful for a wide range of applications. They feature a broad lineup with compact, high-power and complex types to meet various needs. They come in high-power small mold packages and typical applications are for DC/DC converters and load switches.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
RQ3E100GNTB DISTI # C1S625901169786	ROHM Semiconductor	Trans MOSFET N-CH 30V 10A 8-Pin HSMT T/R RoHS: Compliant	40	10:$0.1540
RQ3E100GNTB DISTI # RQ3E100GNTBCT-ND	ROHM Semiconductor	MOSFET N-CH 30V 10A 8-HSMT RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	3001In Stock	1000:$0.1557 500:$0.2076 100:$0.2769 10:$0.4070 1:$0.5000
RQ3E100GNTB DISTI # RQ3E100GNTBDKR-ND	ROHM Semiconductor	MOSFET N-CH 30V 10A 8-HSMT RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	3001In Stock	1000:$0.1557 500:$0.2076 100:$0.2769 10:$0.4070 1:$0.5000
RQ3E100GNTB DISTI # RQ3E100GNTBTR-ND	ROHM Semiconductor	MOSFET N-CH 30V 10A 8-HSMT RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	3000In Stock	30000:$0.1117 15000:$0.1218 6000:$0.1302 3000:$0.1386
RQ3E100GNTB DISTI # RQ3E100GNTB	ROHM Semiconductor	4.5V DRIVE NCH MOSFET, HSMT8, NCH, DISCRETE - Tape and Reel (Alt: RQ3E100GNTB) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0
RQ3E100GNTB DISTI # 755-RQ3E100GNTB	ROHM Semiconductor	MOSFET 4.5V Drive Nch MOSFET RoHS: Compliant	5983	1:$0.4800 10:$0.3730 100:$0.2020 1000:$0.1520 3000:$0.1310 9000:$0.1220 24000:$0.1120 45000:$0.1080
RQ3E100GNTB	ROHM Semiconductor		27	7:$0.7200 1:$0.9000
RQ3E100GNTB	ROHM Semiconductor	RoHS(ship within 1day)	34	1:$0.7000 10:$0.4100 50:$0.2600 100:$0.2200 500:$0.1900 1000:$0.1800
RQ3E100GNTB DISTI # 2706632	ROHM Semiconductor	MOSFET, N-CH, 30V, 21A, HSMT-8	0	500:£0.1180 250:£0.1360 100:£0.1540 25:£0.3080 5:£0.3240
RQ3E100GNTB DISTI # 2706632	ROHM Semiconductor	MOSFET, N-CH, 30V, 21A, HSMT-8 RoHS: Compliant	0	1000:$0.2350 500:$0.3130 100:$0.4180 10:$0.6130 1:$0.7500
RQ3E100GNTB	ROHM Semiconductor	MOSFET 4.5V Drive Nch MOSFET RoHS: Compliant	Americas -
RQ3E100GNTB	ROHM Semiconductor		100	1:¥3.7745 100:¥2.1402 1500:¥1.3569 3000:¥1.0109

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Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1988
Menge eingeben:

Der aktuelle Preis von RQ3E100GNTB dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,48 $~~; ~~0,48 $~~

10: ~~0,37 $~~; ~~3,73 $~~

100: ~~0,20 $~~; ~~20,20 $~~

1000: ~~0,15 $~~; ~~152,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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RQ3E100GNTB

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes