IS43LR16160H-6BLI-TR

IS43LR16160H-6BLI-TR
Mfr. #:
IS43LR16160H-6BLI-TR
Hersteller:
ISSI
Beschreibung:
DRAM 256M, 1.8V, Mobile DDR, 16Mx16, 166Mhz, 90 ball BGA (8mmx10mm) RoHS, IT, T&R
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IS43LR16160H-6BLI-TR Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IS43LR16160H-6BLI-TR Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ISSI
Produktkategorie:
DRAM
RoHS:
Y
Typ:
SDRAM Mobile - DDR
Datenbusbreite:
16 bit
Organisation:
16 M x 16
Paket / Koffer:
BGA-60
Speichergröße:
256 Mbit
Maximale Taktfrequenz:
166 MHz
Zugriffszeit:
6 ns
Versorgungsspannung - Max.:
1.95 V
Versorgungsspannung - Min.:
1.7 V
Versorgungsstrom - Max.:
55 mA
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 85 C
Serie:
IS43LR16160H
Verpackung:
Spule
Marke:
ISSI
Montageart:
SMD/SMT
Produktart:
DRAM
Werkspackungsmenge:
2000
Unterkategorie:
Speicher & Datenspeicherung
Tags
IS43LR16160H, IS43LR161, IS43LR1, IS43LR, IS43L, IS43, IS4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Mobile DDR SDRAM
ISSI Mobile DDR SDRAM is organized as 4 banks of 16,777,216 words x 16 bits and uses a double-data-rate architecture to achieve high-speed operation. The Data Input/Output signals are transmitted on a 16-bit bus. The double data rate architecture is essentially a 2N prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. ISSI Mobile DDR SDRAM offers fully synchronous operations referenced to both rising and falling edges of the clock. The data paths are internally pipelined and 2n-bits prefetched to achieve very high bandwidth. All input and output voltage levels are compatible with LVCMOS.
Bild Teil # Beschreibung
IS43LR16160G-6BL-TR

Mfr.#: IS43LR16160G-6BL-TR

OMO.#: OMO-IS43LR16160G-6BL-TR

DRAM 256M, 1.8V, 166Mhz Mobile DDR
IS43LR16160G-6BLI-TR

Mfr.#: IS43LR16160G-6BLI-TR

OMO.#: OMO-IS43LR16160G-6BLI-TR

DRAM 256M, 1.8V, 166Mhz Mobile DDR
IS43LR16160H-6BLI-TR

Mfr.#: IS43LR16160H-6BLI-TR

OMO.#: OMO-IS43LR16160H-6BLI-TR

DRAM 256M, 1.8V, Mobile DDR, 16Mx16, 166Mhz, 90 ball BGA (8mmx10mm) RoHS, IT, T&R
IS43LR16160G-6BLI

Mfr.#: IS43LR16160G-6BLI

OMO.#: OMO-IS43LR16160G-6BLI

DRAM 256M, 1.8V, 166Mhz Mobile DDR SDRAM
IS43LR16160G-6BL

Mfr.#: IS43LR16160G-6BL

OMO.#: OMO-IS43LR16160G-6BL

DRAM 256M, 1.8V, 166Mhz Mobile DDR SDRAM
IS43LR16160F-6BLI

Mfr.#: IS43LR16160F-6BLI

OMO.#: OMO-IS43LR16160F-6BLI

DRAM 256M, 1.8V 166Mhz Mobile DDR SDRAM
IS43LR16160F-6BLI-TR

Mfr.#: IS43LR16160F-6BLI-TR

OMO.#: OMO-IS43LR16160F-6BLI-TR-INTEGRATED-SILICON-SOLUTION

DRAM 256M,1.8V,Mobile DDR 16Mx16,166Mhz
IS43LR16160G-6BLI-TR

Mfr.#: IS43LR16160G-6BLI-TR

OMO.#: OMO-IS43LR16160G-6BLI-TR-INTEGRATED-SILICON-SOLUTION

DRAM 256M, 1.8V, 166Mhz Mobile DDR
IS43LR16160G-6BL-TR

Mfr.#: IS43LR16160G-6BL-TR

OMO.#: OMO-IS43LR16160G-6BL-TR-INTEGRATED-SILICON-SOLUTION

DRAM 256M, 1.8V, 166Mhz Mobile DDR
IS43LR16160F-6BLI

Mfr.#: IS43LR16160F-6BLI

OMO.#: OMO-IS43LR16160F-6BLI-INTEGRATED-SILICON-SOLUTION

DRAM 256M, 1.8V 166Mhz Mobile DDR SDRAM
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1500
Menge eingeben:
Der aktuelle Preis von IS43LR16160H-6BLI-TR dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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