IKW15T120

IKW15T120
Mfr. #:
IKW15T120
Hersteller:
Infineon Technologies
Beschreibung:
IGBT Transistors LOW LOSS DuoPack 1200V 15A
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IKW15T120 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO-247-3
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
1200 V
Kollektor-Emitter-Sättigungsspannung:
1.7 V
Maximale Gate-Emitter-Spannung:
20 V
Kontinuierlicher Kollektorstrom bei 25 C:
30 A
Pd - Verlustleistung:
110 W
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 150 C
Serie:
TRENCHSTOP IGBT
Verpackung:
Rohr
Höhe:
20.9 mm
Länge:
15.9 mm
Breite:
5.3 mm
Marke:
Infineon-Technologien
Gate-Emitter-Leckstrom:
100 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
240
Unterkategorie:
IGBTs
Handelsname:
TRENCHSTOP
Teil # Aliase:
IKW15T120FKSA1 IKW15T12XK SP000013938
Gewichtseinheit:
1.340411 oz
Tags
IKW15T, IKW1, IKW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 1200V 30A 110000mW Automotive 3-Pin(3+Tab) TO-247 Tube
***ark
Transistor, Igbt, 1.2Kv, 30A, To-247; Dc Collector Current:30A; Collector Emitter Saturation Voltage Vce(On):1.7V; Power Dissipation Pd:110W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of trenchstop-cell and fieldstop concept. The combination of IGBT with soft recovery Emitter Controled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled HE diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar inverters; Motor control; Major home appliances; Welding; Other hard switching applications
Teil # Mfg. Beschreibung Aktie Preis
IKW15T120FKSA1
DISTI # V99:2348_06378624
Infineon Technologies AGTrans IGBT Chip N-CH 1200V 30A 110000mW 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
240
  • 500:$2.1930
  • 250:$2.2590
  • 100:$2.5300
  • 50:$2.7660
  • 25:$2.8790
  • 10:$3.1030
  • 1:$3.3470
IKW15T120FKSA1
DISTI # IKW15T120FKSA1-ND
Infineon Technologies AGIGBT 1200V 30A 110W TO247-3
RoHS: Compliant
Min Qty: 240
Container: Tube
Temporarily Out of Stock
  • 240:$4.5150
IKW15T120FKSA1
DISTI # 26197468
Infineon Technologies AGTrans IGBT Chip N-CH 1200V 30A 110000mW 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
240
  • 500:$2.1930
  • 250:$2.2590
  • 100:$2.5300
  • 50:$2.7660
  • 25:$2.8790
  • 10:$3.1030
  • 3:$3.3470
IKW15T120
DISTI # 30578946
Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 30A 3-Pin(3+Tab) TO-247
RoHS: Compliant
107
  • 50:$2.7923
IKW15T120
DISTI # IKW15T120
Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 30A 3-Pin TO-247 Tube - Bulk (Alt: IKW15T120)
RoHS: Compliant
Min Qty: 122
Container: Bulk
Americas - 0
  • 122:$2.0900
  • 124:$2.0900
  • 246:$1.9900
  • 610:$1.8900
  • 1220:$1.8900
IKW15T120
DISTI # SP000013938
Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 30A 3-Pin TO-247 Tube (Alt: SP000013938)
RoHS: Compliant
Min Qty: 1
Container: Tube
Europe - 0
  • 1:€2.4900
  • 10:€2.2900
  • 25:€2.1900
  • 50:€2.0900
  • 100:€1.9900
  • 500:€1.8900
  • 1000:€1.7900
IKW15T120
DISTI # SP000013938
Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 30A 3-Pin TO-247 Tube (Alt: SP000013938)
RoHS: Compliant
Min Qty: 1
Container: Tube
Europe - 0
  • 1:€2.8900
  • 10:€2.2900
  • 25:€2.0900
  • 50:€1.9900
  • 100:€1.9900
  • 500:€1.8900
  • 1000:€1.8900
IKW15T120XK
DISTI # IKW15T120FKSA1
Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 30A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: IKW15T120FKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube
Americas - 0
  • 240:$2.3900
  • 480:$2.2900
  • 960:$2.1900
  • 1440:$2.0900
  • 2400:$2.0900
IKW15T120FKSA1
DISTI # 13AC9007
Infineon Technologies AGTRANSISTOR, IGBT, 1.2KV, 30A, TO-247,DC Collector Current:30A,Collector Emitter Saturation Voltage Vce(on):1.7V,Power Dissipation Pd:110W,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case Style:TO-247,No. of Pins:3Pins,RoHS Compliant: Yes115
  • 500:$2.5100
  • 250:$2.6000
  • 100:$3.0900
  • 50:$3.5700
  • 25:$3.8000
  • 10:$4.3400
  • 1:$5.0200
IKW15T120
DISTI # 726-IKW15T120
Infineon Technologies AGIGBT Transistors LOW LOSS DuoPack 1200V 15A
RoHS: Compliant
309
  • 1:$5.8300
  • 10:$4.9600
  • 100:$4.3000
  • 250:$4.0800
  • 500:$3.6600
IKW15T120 E8161
DISTI # 726-IKW15T120E8161
Infineon Technologies AGIGBT Transistors LOW LOSS DuoPack 1200V 15A
RoHS: Compliant
0
    IKW15T120Infineon Technologies AGInsulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, TO-247AC
    RoHS: Compliant
    143
    • 1000:$2.0000
    • 500:$2.1100
    • 100:$2.1900
    • 25:$2.2900
    • 1:$2.4600
    IKW15T120FKSA1
    DISTI # 7545399
    Infineon Technologies AGTRANSISTOR IGBT N-CH 1.2KV 30A TO247, EA28
    • 10:£2.9800
    • 1:£4.3900
    IKW15T120FKSA1
    DISTI # 7545399P
    Infineon Technologies AGTRANSISTOR IGBT N-CH 1.2KV 30A TO247, TU272
    • 10:£2.9800
    IKW15T120
    DISTI # IKW15T120
    Infineon Technologies AGTransistor: IGBT,1200V,30A,110W,TO247-3182
    • 1:$3.7300
    • 3:$3.3500
    • 10:$2.7800
    • 30:$2.6900
    IKW15T120FKSA1
    DISTI # 2725786
    Infineon Technologies AGTRANSISTOR, IGBT, 1.2KV, 30A, TO-247
    RoHS: Compliant
    120
    • 500:£3.1900
    • 250:£3.2600
    • 100:£3.3300
    • 10:£3.4000
    • 1:£3.4700
    IKW15T120
    DISTI # 1471745
    Infineon Technologies AGIGBT, N, 1200V, 15A, TO-247
    RoHS: Compliant
    0
    • 500:$5.5200
    • 250:$6.1500
    • 100:$6.4800
    • 10:$7.4700
    • 1:$8.7900
    IKW15T120FKSA1
    DISTI # 2725786
    Infineon Technologies AGTRANSISTOR, IGBT, 1.2KV, 30A, TO-247
    RoHS: Compliant
    115
    • 100:$5.2000
    • 10:$5.8700
    • 1:$6.2800
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    Mfr.#: AC0603KRX7R9BB103

    OMO.#: OMO-AC0603KRX7R9BB103-YAGEO

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    Verfügbarkeit
    Aktie:
    273
    Auf Bestellung:
    2256
    Menge eingeben:
    Der aktuelle Preis von IKW15T120 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    5,83 $
    5,83 $
    10
    4,96 $
    49,60 $
    100
    4,30 $
    430,00 $
    250
    4,08 $
    1 020,00 $
    500
    3,66 $
    1 830,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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