2MBI75S-120

2MBI75S-120
Mfr. #:
2MBI75S-120
Hersteller:
Fuji Electric Co Ltd
Beschreibung:
IGBT STANDARD MODULE
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
2MBI75S-120 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
2MBI7, 2MBI, 2MB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***omponent
IGBT POWER TRANSISTOR MODULE
***ark
IGBT MODULE, 1200V, 75A; Transistor Type:IGBT Module; Transistor Polarity:N Channel; Voltage, Vces:1200V; Current Ic Continuous a Max:100A; Voltage, Vce Sat Max:2.6V; Power Dissipation:600W; Case Style:M232; Termination Type:Screw; ;RoHS Compliant: Yes
***nell
IGBT MODULE, 1200V, 75A; Transistor Type:IGBT Module; Transistor Polarity:N Channel; Voltage, Vces:1200V; Current Ic Continuous a Max:100A; Voltage, Vce Sat Max:2.6V; Power Dissipation:600W; Case Style:M232; Termination Type:Screw; Collector-to-Emitter Breakdown Voltage:1200V; Current Ic @ Vce Sat:75A; Current, Icm Pulsed:200A; External Depth:34mm; External Length / Height:30mm; Power, Pd:600W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Time, Fall:300ns; Time, Rise:600ns; Transistors, No. of:2; Voltage, Isolation:2500V; Weight:0.18kg; Width, External:92mm
***ment14 APAC
IGBT MODULE, 1200V, 75A; Module Configuration:Dual; Transistor Polarity:N Channel; DC Collector Current:100A; Collector Emitter Voltage Vces:2.6V; Power Dissipation Pd:600W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module; No. of Pins:7; Current Ic @ Vce Sat:75A; Current Ic Continuous a Max:100A; Current Temperature:25°C; External Depth:34mm; External Length / Height:30mm; External Width:92mm; Fall Time tf:300ns; Full Power Rating Temperature:25°C; Isolation Voltage:2.5kV; Junction Temperature Tj Max:150°C; No. of Transistors:2; Package / Case:M232; Power Dissipation Max:600W; Power Dissipation Pd:600W; Pulsed Current Icm:200A; Rise Time:600ns; Termination Type:Screw; Voltage Vces:1.2kV; Weight:0.18kg
Teil # Mfg. Beschreibung Aktie Preis
2MBI75S-120
DISTI # FE0000000001334
Fuji Electric Co LtdIGBT STANDARD MODULE
RoHS: Compliant
0 in Stock0 on Order
  • 20:$66.6300
  • 1:$71.7500
2MBI75S-120-M
DISTI # FE0000000001336
Fuji Electric Co LtdIGBT STANDARD MODULE
RoHS: Compliant
0 in Stock0 on Order
  • 20:$66.6300
  • 1:$71.7500
2MBI75S-120-50
DISTI # FE0000000001335
Fuji Electric Co LtdIGBT STANDARD MODULE
RoHS: Compliant
0 in Stock0 on Order
  • 20:$83.8300
  • 1:$90.2800
Bild Teil # Beschreibung
2MBI75F-060

Mfr.#: 2MBI75F-060

OMO.#: OMO-2MBI75F-060-1190

Neu und Original
2MBI75J-060

Mfr.#: 2MBI75J-060

OMO.#: OMO-2MBI75J-060-1190

Neu und Original
2MBI75L-120

Mfr.#: 2MBI75L-120

OMO.#: OMO-2MBI75L-120-1190

Neu und Original
2MBI75N-060

Mfr.#: 2MBI75N-060

OMO.#: OMO-2MBI75N-060-1190

Neu und Original
2MBI75N-060-01

Mfr.#: 2MBI75N-060-01

OMO.#: OMO-2MBI75N-060-01-1190

Neu und Original
2MBI75S-120

Mfr.#: 2MBI75S-120

OMO.#: OMO-2MBI75S-120-1190

IGBT STANDARD MODULE
2MBI75U4A-120

Mfr.#: 2MBI75U4A-120

OMO.#: OMO-2MBI75U4A-120-1190

100A, 1200V, N-CHANNEL IGBT
2MBI75U4A-120-50

Mfr.#: 2MBI75U4A-120-50

OMO.#: OMO-2MBI75U4A-120-50-1190

Neu und Original
2MBI75VA-120-50

Mfr.#: 2MBI75VA-120-50

OMO.#: OMO-2MBI75VA-120-50-1190

IGBT, MODULE, N-CH, 1.2KV, 75A, Transistor Polarity:N Channel, DC Collector Current:75A, Collector Emitter Saturation Voltage Vce(on):1.85V, Power Dissipation Pd:390W, Collector Emitter Voltage V
2MBI75VA-170-50

Mfr.#: 2MBI75VA-170-50

OMO.#: OMO-2MBI75VA-170-50-1190

IGBT
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4000
Menge eingeben:
Der aktuelle Preis von 2MBI75S-120 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,00 $
0,00 $
10
0,00 $
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100
0,00 $
0,00 $
500
0,00 $
0,00 $
1000
0,00 $
0,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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