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IXXR110N65B4H1

IXXR110N65B4H1
Mfr. #:
IXXR110N65B4H1
Hersteller:
Littelfuse
Beschreibung:
IGBT Transistors 650V/150A TRENCH IGBT GENX4 XPT
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXXR110N65B4H1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXXR110N65B4H1 DatasheetIXXR110N65B4H1 Datasheet (P4-P6)IXXR110N65B4H1 Datasheet (P7)
ECAD Model:
Mehr Informationen:
IXXR110N65B4H1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
ISOPLUS 247-3
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
650 V
Kollektor-Emitter-Sättigungsspannung:
1.75 V
Maximale Gate-Emitter-Spannung:
20 V
Kontinuierlicher Kollektorstrom bei 25 C:
150 A
Pd - Verlustleistung:
455 W
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Serie:
IXXR110N65
Verpackung:
Rohr
Kontinuierlicher Kollektorstrom Ic Max:
70 A
Marke:
IXYS
Gate-Emitter-Leckstrom:
100 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
30
Unterkategorie:
IGBTs
Handelsname:
XPT
Gewichtseinheit:
0.186952 oz
Tags
IXXR, IXX
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
650V XPT™ High Speed Trench IGBTs
IXYS 650V XPT™ High Speed Trench IGBTs are designed to minimize conduction and switching losses, especially in hard-switching applications. IXYS 650V XPT™ High Speed Trench IGBTs are optimized for different switching speed ranges (up to 60kHz). Devices co-packed with IXYS ultra-fast Sonic-FRD™ diodes are also available. The current ratings of devices in this product family range from 30A to 200A at a high temperature of 110°C. These devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10μs Short Circuit Safe Operating Area (SCSOA). Moreover these IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage of 650V, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses. Thanks to its speed and ‘soft recovery’ characteristics, the co-packed Sonic-FRD™ diode is an ideal match for these XPT™ IGBTs in reducing turn-on and turn-off losses. It is optimized to suppress ringing oscillations and voltage spikes in recovery, thereby producing smooth switching waveforms and significantly lowering electromagnetic interference (EMI) in the process. The temperature stability of its forward voltage also helps lower switching losses when devices are operated in parallel. The new IGBTs are well-suited for a wide variety of power conversion applications, including lighting control, battery chargers, motor drives, power inverters, power factor correction circuits, switch-mode power supplies, uninterruptible power supplies, E-Bikes, and welding machines.Learn More
Teil # Mfg. Beschreibung Aktie Preis
IXXR110N65B4H1
DISTI # 747-IXXR110N65B4H1		IXYS CorporationIGBT Transistors 650V/150A TRENCH IGBT GENX4 XPT
RoHS: Compliant		67
  • 1:$12.5000
  • 10:$11.3600
  • 25:$10.5100
  • 50:$9.9000
  • 100:$9.6600
  • 250:$8.8000
  • 500:$8.2400
Bild Teil # Beschreibung
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 OPTOISO 5.3KV DARL W/BASE 6DIP
Verfügbarkeit
Aktie:
380
Auf Bestellung:
2363
Menge eingeben:
Der aktuelle Preis von IXXR110N65B4H1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
12,50 $
12,50 $
10
11,36 $
113,60 $
25
10,51 $
262,75 $
50
9,90 $
495,00 $
100
9,66 $
966,00 $
250
8,80 $
2 200,00 $
500
8,24 $
4 120,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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