SI1065X-T1-E3

Mfr. #:: SI1065X-T1-E3
Hersteller:: Vishay / Siliconix
Beschreibung:: MOSFET 12V 1.18A 0.236W 130 mohms @ 4.5V
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: SI1065X-T1-E3 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SI1065X-T1-E3 Datasheet SI1065X-T1-E3 Datasheet (P4-P6)SI1065X-T1-E3 Datasheet (P7-P8)
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: Vishay

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Handelsname:: TrenchFET

Verpackung:: Spule

Serie:: SI1

Marke:: Vishay / Siliconix

Produktart:: MOSFET

Werkspackungsmenge:: 3000

Unterkategorie:: MOSFETs

Teil # Aliase:: SI1065X-E3

Gewichtseinheit:: 0.001129 oz

Tags: SI1065, SI106, SI10, SI1

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI1065X-T1-E3 Beschreibung

***i-Key: MOSFET P-CH 12V 1.18A SOT563F

***ied Electronics & Automation: P-CHANNEL 12-V (D-S) MOSFET

***ark: MOSFET, P, SC-89; Transistor type:MOSFET; Voltage, Vds typ:-12V; Current, Id cont:1.18A; Resistance, Rds on:0.13R; Voltage, Vgs Rds on measurement:-4.5V; Voltage, Vgs th typ:-0.95V; Case style:SC-89-6; Base number:1065; Charge, gate RoHS Compliant: Yes

***nell: MOSFET, P, SC-89; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-12V; Current, Id Cont:1.18A; Resistance, Rds On:0.13ohm; Voltage, Vgs Rds on Measurement:-4.5V; Voltage, Vgs th Typ:-0.95V; Case Style:SC-89; Termination Type:SMD; Base Number:1065; Current, Idm Pulse:8A; No. of Pins:6; P Channel Gate Charge:6.7nC; Power Dissipation:0.236mW; Power, Pd:0.236W; Resistance, Rds on @ Vgs = 1.8V:0.205ohm; Resistance, Rds on @ Vgs = 2.5V:0.158ohm; Resistance, Rds on @ Vgs = 4.5V:0.13ohm; Voltage, Rds Measurement:4.5V; Voltage, Vds Max:12V; Voltage, Vgs th Max:-0.95V; Voltage, Vgs th Min:-0.45V

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
SI1065X-T1-E3 DISTI # SI1065X-T1-E3TR-ND	Vishay Siliconix	MOSFET P-CH 12V 1.18A SOT563F RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Limited Supply - Call
SI1065X-T1-E3 DISTI # SI1065X-T1-E3CT-ND	Vishay Siliconix	MOSFET P-CH 12V 1.18A SOT563F RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
SI1065X-T1-E3 DISTI # SI1065X-T1-E3DKR-ND	Vishay Siliconix	MOSFET P-CH 12V 1.18A SOT563F RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
SI1065X-T1-E3 DISTI # 70026185	Vishay Siliconix	P-CHANNEL 12-V (D-S) MOSFET RoHS: Compliant	0	3000:$0.3100 6000:$0.3040 15000:$0.2950 30000:$0.2820 75000:$0.2640
SI1065X-T1-E3/BKN DISTI # 70026348	Vishay Siliconix	P-CHANNEL 12-V (D-S) MOSFET RoHS: Compliant	0	1:$0.3200 250:$0.3000 500:$0.2900 1000:$0.2800 2000:$0.2700
SI1065X-T1-E3 DISTI # 781-SI1065X-T1-E3	Vishay Intertechnologies	MOSFET 12V 1.18A 0.236W 130 mohms @ 4.5V RoHS: Compliant	0

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: SI1065-A-GM OMO.#: OMO-SI1065-A-GM	RF Microcontrollers - MCU RF+MCU 8051 25 Hz 64 kB +13 dBm
	Mfr.#: SI1065-A-GMR OMO.#: OMO-SI1065-A-GMR	RF Microcontrollers - MCU RF+MCU 8051 25 Hz 64 kB +13 dBm
	Mfr.#: SI1065X-T1-E3 OMO.#: OMO-SI1065X-T1-E3	MOSFET 12V 1.18A 0.236W 130 mohms @ 4.5V
	Mfr.#: SI1065X-T1-E3 OMO.#: OMO-SI1065X-T1-E3-VISHAY	MOSFET P-CH 12V 1.18A SOT563F
	Mfr.#: SI1065-A-GMR OMO.#: OMO-SI1065-A-GMR-SILICON-LABS	Microcontrollers - MCU RF Microcontrollers - MCU 32kB 4kB RAM +13 dBm prgm XCVR QFN36 EZR
	Mfr.#: SI1065-A-GM OMO.#: OMO-SI1065-A-GM-SILICON-LABS	Microcontrollers - MCU RF Microcontrollers - MCU 32kB 4kB RAM +13 dBm prgm XCVR QFN36 EZR
	Mfr.#: SI1065X-T1-GE3 OMO.#: OMO-SI1065X-T1-GE3-VISHAY	MOSFET P-CH 12V 1.18A SC89-6

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1500
Menge eingeben:

Der aktuelle Preis von SI1065X-T1-E3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

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SI1065X-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes