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SQJ912BEP-T1_GE3

SQJ912BEP-T1_GE3
Mfr. #:
SQJ912BEP-T1_GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET Dual N-Ch 40V AEC-Q101 Qualified
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SQJ912BEP-T1_GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SQJ912BEP-T1_GE3 DatasheetSQJ912BEP-T1_GE3 Datasheet (P4-P6)SQJ912BEP-T1_GE3 Datasheet (P7)
ECAD Model:
Mehr Informationen:
SQJ912BEP-T1_GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerPAK-SO-8L-4
Anzahl der Kanäle:
2 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
40 V
Id - Kontinuierlicher Drainstrom:
30 A
Rds On - Drain-Source-Widerstand:
9 mOhms, 9 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1 V
Vgs - Gate-Source-Spannung:
12 V
Qg - Gate-Ladung:
60 nC, 60 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
48 W
Aufbau:
Dual
Kanalmodus:
Erweiterung
Qualifikation:
AEC-Q101
Verpackung:
Spule
Serie:
SQJ912BEP
Transistortyp:
2 N-Channel
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
70 S, 70 S
Abfallzeit:
4 ns, 4 ns
Produktart:
MOSFET
Anstiegszeit:
4 ns, 4 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
33 ns, 33 ns
Typische Einschaltverzögerungszeit:
12 ns, 12 ns
Tags
SQJ912, SQJ91, SQJ9, SQJ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ow.cn
Trans MOSFET N-CH 40V 30A Automotive 5-Pin(4+Tab) PowerPAK SO T/R
***ure Electronics
DUAL N-CHANNEL 40-V (D-S) 175C MOSFET
***ment14 APAC
MOSFET, AEC-Q101, DUAL N-CH, 40V, 30A
***nell
MOSFET, AEC-Q101, DUAL N-CH, 40V, 30A; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 30A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.009ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.5V; Power Dissipation Pd: 48W; Transistor Case Style: PowerPAK SO; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: TrenchFET Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
SQ Automotive Power MOSFETs
Vishay / Siliconix SQ Automotive Power MOSFETs are AEC-Q101 qualified that are produced using a special process design that is optimized for use in the automotive industry. These SQ MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. The SQ MOSFETs are available in a wide variety of packages for design flexibility. Packages include the TO-252, TO-262, TO-263, PowerPAK SO-8, D2PAK (TO-263), DPAK, and PowerPAK 1212-8W as well as several space-saving, small-outline options. A full range of polarity options is also available, including N-channel and P-Channel co-packages.
Teil # Mfg. Beschreibung Aktie Preis
SQJ912BEP-T1_GE3
DISTI # V72:2272_21388902		Vishay IntertechnologiesSQJ912BEP-T1_GE33000
  • 75000:$0.4551
  • 30000:$0.4575
  • 15000:$0.4600
  • 6000:$0.4624
  • 3000:$0.4649
  • 1000:$0.4673
  • 500:$0.5979
  • 250:$0.6943
  • 100:$0.7095
  • 50:$0.9258
  • 25:$0.9409
  • 10:$1.0249
  • 1:$1.3094
SQJ912BEP-T1_GE3
DISTI # V99:2348_21388902		Vishay IntertechnologiesSQJ912BEP-T1_GE30
  • 1500000:$0.4925
  • 300000:$0.4932
  • 30000:$0.4938
  • 3000:$0.4939
SQJ912BEP-T1_GE3
DISTI # SQJ912BEP-T1_GE3TR-ND		Vishay SiliconixMOSFET N-CH DUAL 40V PPSO-8L
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 15000:$0.4516
  • 6000:$0.4692
  • 3000:$0.4939
SQJ912BEP-T1_GE3
DISTI # SQJ912BEP-T1_GE3CT-ND		Vishay SiliconixMOSFET N-CH DUAL 40V PPSO-8L
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.5451
  • 500:$0.6904
  • 100:$0.8358
  • 10:$1.0720
  • 1:$1.2000
SQJ912BEP-T1_GE3
DISTI # SQJ912BEP-T1_GE3DKR-ND		Vishay SiliconixMOSFET N-CH DUAL 40V PPSO-8L
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.5451
  • 500:$0.6904
  • 100:$0.8358
  • 10:$1.0720
  • 1:$1.2000
SQJ912BEP-T1_GE3
DISTI # 30209833		Vishay IntertechnologiesSQJ912BEP-T1_GE33000
  • 14:$1.3094
SQJ912BEP-T1_GE3
DISTI # SQJ912BEP-T1_GE3		Vishay IntertechnologiesTrenchFET Power MOSFET Automotive N-Channel Dual 40V VDS ±12V VGS 30A ID 175°C 8-Pin PowerPAK SOIC T/R - Tape and Reel (Alt: SQJ912BEP-T1_GE3)
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.4299
  • 18000:$0.4419
  • 12000:$0.4549
  • 6000:$0.4739
  • 3000:$0.4889
SQJ912BEP-T1_GE3
DISTI # 59AC7661		Vishay IntertechnologiesDUAL N-CHANNEL 40-V (D-S) 175C MOSFE0
  • 10000:$0.4270
  • 6000:$0.4370
  • 4000:$0.4540
  • 2000:$0.5040
  • 1000:$0.5550
  • 1:$0.5780
SQJ912BEP-T1_GE3
DISTI # 81AC2822		Vishay IntertechnologiesMOSFET, AEC-Q101, DUAL N-CH, 40V, 30A,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.009ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.5V,PowerRoHS Compliant: Yes15
  • 500:$0.7170
  • 250:$0.7750
  • 100:$0.8330
  • 50:$0.9190
  • 25:$1.0000
  • 10:$1.0900
  • 1:$1.3200
SQJ912BEP-T1_GE3
DISTI # 78-SQJ912BEP-T1_GE3		Vishay IntertechnologiesMOSFET Dual N-Ch 40V AEC-Q101 Qualified
RoHS: Compliant		8034
  • 1:$1.1700
  • 10:$0.9670
  • 100:$0.7420
  • 500:$0.6380
  • 1000:$0.5030
  • 3000:$0.4700
  • 6000:$0.4460
  • 9000:$0.4300
SQJ912BEP-T1_GE3
DISTI # 2932989		Vishay IntertechnologiesMOSFET, AEC-Q101, DUAL N-CH, 40V, 30A
RoHS: Compliant		15
  • 1000:$0.7480
  • 500:$0.7910
  • 250:$0.9270
  • 100:$1.1400
  • 10:$1.4500
  • 1:$1.7500
SQJ912BEP-T1_GE3
DISTI # 2932989		Vishay IntertechnologiesMOSFET, AEC-Q101, DUAL N-CH, 40V, 30A20
  • 500:£0.5150
  • 250:£0.5570
  • 100:£0.5980
  • 10:£0.8360
  • 1:£1.0800
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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1991
Menge eingeben:
Der aktuelle Preis von SQJ912BEP-T1_GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,17 $
1,17 $
10
0,97 $
9,67 $
100
0,74 $
74,20 $
500
0,64 $
319,00 $
1000
0,50 $
503,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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