BSC600N25NS3 G

BSC600N25NS3 G
Mfr. #:
BSC600N25NS3 G
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 250V 25A TDSON-8 OptiMOS 3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSC600N25NS3 G Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
BSC600N25NS3 G Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TDSON-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
250 V
Id - Kontinuierlicher Drainstrom:
25 A
Rds On - Drain-Source-Widerstand:
50 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
29 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
125 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
OptiMOS
Verpackung:
Spule
Höhe:
1.27 mm
Länge:
5.9 mm
Serie:
OptiMOS 3
Transistortyp:
1 N-Channel
Typ:
OptiMOS 3 Power-Transistor
Breite:
5.15 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
25 S
Abfallzeit:
8 ns
Produktart:
MOSFET
Anstiegszeit:
10 ns
Werkspackungsmenge:
5000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
22 ns
Typische Einschaltverzögerungszeit:
10 ns
Teil # Aliase:
BSC600N25NS3GATMA1 BSC6N25NS3GXT SP000676402
Gewichtseinheit:
0.003527 oz
Tags
BSC600N25NS3G, BSC600N25NS3, BSC600N, BSC60, BSC6, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolMOS™ N-Channel MOSFETs
Infineon CoolMOS™ N-Channel Power MOSFETs set the standard for high performance and energy efficiency. The Infineon OptiMOS low voltage MOSFET family demonstrates a combination of the industry's lowest on-state resistance and best switching performance in the voltage range from 20V up to 250V. The new OptiMOS 25V and 30V product family sets new standards in power density and energy efficiency for discrete power MOSFETs. These devices are application-specific optimized for power supplies of servers, notebooks, telecom / datacom switches, and more. The revolutionary Infineon CoolMOS power family sets new standards in energy efficiency and is a technology leader in high voltage MOSFETs. The CoolMOS offers a significant reduction of conduction and switching losses and enables high power density and efficiency for superior power conversion systems. CoolMOS C6 / E6 Power MOSFETs combine the advantage of state-of-the-art superjunction devices with the strengths of conventional power semiconductors. Infineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Teil # Mfg. Beschreibung Aktie Preis
BSC600N25NS3GATMA1
DISTI # BSC600N25NS3GATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 250V 25A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
On Order
  • 5000:$1.4342
BSC600N25NS3GATMA1
DISTI # BSC600N25NS3GATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 250V 25A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Temporarily Out of Stock
  • 1000:$1.6157
  • 500:$1.9158
  • 100:$2.3659
  • 10:$2.8850
  • 1:$3.2300
BSC600N25NS3GATMA1
DISTI # BSC600N25NS3GATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 250V 25A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Temporarily Out of Stock
  • 1000:$1.6157
  • 500:$1.9158
  • 100:$2.3659
  • 10:$2.8850
  • 1:$3.2300
BSC600N25NS3 G
DISTI # BSC600N25NS3 G
Infineon Technologies AGTrans MOSFET N-CH 250V 25A 8-Pin TDSON T/R (Alt: BSC600N25NS3 G)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel
Asia - 0
    BSC600N25NS3GATMA1
    DISTI # BSC600N25NS3GATMA1
    Infineon Technologies AGTrans MOSFET N-CH 250V 25A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC600N25NS3GATMA1)
    RoHS: Compliant
    Min Qty: 5000
    Container: Reel
    Americas - 0
    • 5000:$1.3900
    • 10000:$1.3900
    • 20000:$1.2900
    • 30000:$1.2900
    • 50000:$1.1900
    BSC600N25NS3GATMA1
    DISTI # 79X1338
    Infineon Technologies AGMOSFET, N-CH, 250V, 25A, PG-TDSON- 8,Transistor Polarity:N Channel,Continuous Drain Current Id:25A,Drain Source Voltage Vds:250V,On Resistance Rds(on):0.05ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes0
    • 1:$2.8300
    • 10:$2.4000
    • 25:$2.2900
    • 50:$2.1900
    • 100:$2.0800
    • 250:$1.9800
    • 500:$1.7800
    • 1000:$1.5000
    BSC600N25NS3 G
    DISTI # 726-BSC600N25NS3GXT
    Infineon Technologies AGMOSFET N-Ch 250V 25A TDSON-8 OptiMOS 3
    RoHS: Compliant
    99
    • 1:$2.8300
    • 10:$2.4000
    • 100:$2.0800
    • 250:$1.9800
    • 500:$1.7800
    • 1000:$1.5000
    • 2500:$1.4200
    • 5000:$1.3700
    BSC600N25NS3GATMA1
    DISTI # 726-BSC600N25NS3GATM
    Infineon Technologies AGMOSFET N-Ch 250V 25A TDSON-8 OptiMOS 3
    RoHS: Compliant
    0
    • 1:$2.7000
    • 10:$2.3000
    • 100:$1.9900
    • 250:$1.8900
    • 500:$1.7000
    • 1000:$1.4300
    • 2500:$1.3600
    BSC600N25NS3GATMA1
    DISTI # 9064303P
    Infineon Technologies AGMOSFET N-CH 250V 25A OPTIMOS TDSON8 EP, RL15
    • 25:£1.8320
    • 125:£1.4700
    • 250:£1.3760
    • 625:£1.2840
    BSC600N25NS3GInfineon Technologies AGPOWER FIELD-EFFECT TRANSISTOR, 25A I(D), 250V, 0.06OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET4
    • 4:$6.6000
    • 2:$7.5000
    • 1:$9.0000
    BSC600N25NS3GATMA1
    DISTI # 2432713RL
    Infineon Technologies AGMOSFET, N CH, 250V, 25A, TDSON-8
    RoHS: Compliant
    0
    • 1:$4.4800
    • 10:$3.8100
    • 100:$3.2900
    BSC600N25NS3GATMA1
    DISTI # 2432713
    Infineon Technologies AGMOSFET, N CH, 250V, 25A, TDSON-8
    RoHS: Compliant
    0
    • 1:$4.4800
    • 10:$3.8100
    • 100:$3.2900
    BSC600N25NS3GATMA1
    DISTI # 2432713
    Infineon Technologies AGMOSFET, N CH, 250V, 25A, TDSON-8
    RoHS: Compliant
    0
    • 1:£2.9600
    • 10:£2.2900
    • 100:£1.8700
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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1989
    Menge eingeben:
    Der aktuelle Preis von BSC600N25NS3 G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    2,69 $
    2,69 $
    10
    2,29 $
    22,90 $
    100
    1,98 $
    198,00 $
    250
    1,88 $
    470,00 $
    500
    1,69 $
    845,00 $
    1000
    1,42 $
    1 420,00 $
    2500
    1,35 $
    3 375,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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