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DZT751-13

DZT751-13
Mfr. #:
DZT751-13
Hersteller:
Diodes Incorporated
Beschreibung:
Bipolar Transistors - BJT PNP 1W
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
DZT751-13 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
DZT751-13 DatasheetDZT751-13 Datasheet (P4)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Eingebaute Dioden
Produktkategorie:
Bipolartransistoren - BJT
RoHS:
Y
Montageart:
SMD/SMT
Paket / Koffer:
SOT-223-4
Polarität des Transistors:
PNP
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
- 60 V
Kollektor- Basisspannung VCBO:
- 80 V
Emitter- Basisspannung VEBO:
- 5 V
Kollektor-Emitter-Sättigungsspannung:
- 600 mV
Maximaler DC-Kollektorstrom:
- 6 A
Bandbreitenprodukt fT gewinnen:
145 MHz
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Serie:
DZT751
DC-Stromverstärkung hFE Max:
70
Höhe:
1.6 mm
Länge:
6.5 mm
Verpackung:
Spule
Breite:
3.5 mm
Marke:
Eingebaute Dioden
DC-Kollektor/Basisverstärkung hfe Min:
40 at 2 A, 2 V
Pd - Verlustleistung:
2000 mW
Produktart:
BJTs - Bipolartransistoren
Werkspackungsmenge:
2500
Unterkategorie:
Transistoren
Gewichtseinheit:
0.003951 oz
Tags
DZT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
PNP 60 V 3 A 1 W Surface Mount Transistor - SOT-223
***ical
Trans GP BJT PNP 60V 3A 2000mW 4-Pin(3+Tab) SOT-223 T/R
*** Services
CoC and 2-years warranty / RFQ for pricing
***S.I.T. Europe - USA - Asia
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin
***Yang
Trans GP BJT PNP 60V 3A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel
***enic
60V 2W 3A 100@500mA2V 75MHz 550mV@3A300mA PNP -55¡Í~+150¡Í@(Tj) SOT-223-4L Bipolar Transistors - BJT ROHS
***rchild Semiconductor
These devices are designed with high current gain and low saturation voltage with collector currents up to 3 A continuous.
***ark
TRANSISTOR, PNP SOT-223TRANSISTOR, PNP SOT-223; Transistor type:Low Saturation; Transistor polarity:PNP; Case style:SOT-223; Voltage, Vceo:60V; Current, Ic max:3mA; Power, Ptot:2W; hfe, min:100; Current, Ic hFE:0.5A; Voltage, RoHS Compliant: Yes
***roFlash
Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin
***ure Electronics
BCP52 Series PNP 2 W 60 V 1 A Surface Mount Power Transistor - SOT-223
***p One Stop
Trans GP BJT PNP 60V 1A Automotive 4-Pin(3+Tab) SOT-223 T/R
***trelec
Transistor Polarity = PNP / Configuration = Single / Continuous Collector Current (Ic) A = -1 / Collector-Emitter Voltage (Vceo) V = -60 / DC Current Gain (hFE) = 100 / Collector-Base Voltage (Vcbo) V = -60 / Emitter-Base Voltage (Vebo) V = -5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 150 / Power Dissipation (Pd) W = 2 / Package Type = SOT-223 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = -0.5 / Reflow Temperature Max. °C = 260
***S.I.T. Europe - USA - Asia
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin
*** Source Electronics
Trans GP BJT PNP 60V 3A 2000mW 4-Pin(3+Tab) SOT-223 T/R / TRANS PNP 60V 3A SOT223
***ark
TRANSISTOR,BJT,PNP,60V V(BR)CEO,3A I(C),SOT-223
***ure Electronics
NZT660A Series 2 W 60 V Surface Mount PNP General Purpose Amplifier - SOT-223
***enic
60V 2W 3A 250@500mA2V 75MHz PNP 500mV@3A300mA -55¡Í~+150¡Í@(Tj) SOT-223 Bipolar Transistors - BJT ROHS
***ment14 APAC
Transistor, BIPOL, PNP, -60V, SOT-223-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-60V; Transition Frequency ft:75MHz; Power
***rchild Semiconductor
These devices are designed with high current gain and low saturation voltage with collector currents up to 3 A continuous.
***Yang
Bipolar Transistors - BJT Pwr Mid Perf Transistor SOT223 T&R 1K
***ical
Trans GP BJT PNP 60V 1A 2000mW 4-Pin(3+Tab) SOT-223 T/R
***(Formerly Allied Electronics)
Trans GP BJT PNP 60V 1A 4Pin SOT223
***S.I.T. Europe - USA - Asia
Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin
***C
Trans GP BJT PNP 60V 1A 4-Pin(3+Tab) SOT-223 T/R Trans GP BJT PNP 60V 1A 4-Pin(3+Tab) SOT-223 T/R
***ure Electronics
FZT591 Series PNP 1 A 60 V SMT Silicon Medium Power Transistor - SOT-223
***(Formerly Allied Electronics)
60V PNP Power Transistor SOT-223
*** Source Electronics
Trans GP BJT PNP 60V 1.2A 1500mW 4-Pin(3+Tab) SOT-223 T/R / TRANS PNP 60V 1.2A SOT-223
***r Electronics
Power Bipolar Transistor, 1.2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin
***rchild Semiconductor
This device is designed for general purpose medium power amplifiers and switching circuits requiring collector currents to 1.0 A. Sourced from Process 78.
Teil # Mfg. Beschreibung Aktie Preis
DZT751-13
DISTI # V36:1790_06698404		Zetex / Diodes IncTrans GP BJT PNP 60V 3A 4-Pin(3+Tab) SOT-223 T/R
RoHS: Compliant		0
  • 2500000:$0.1454
  • 1250000:$0.1456
  • 250000:$0.1520
  • 25000:$0.1613
  • 2500:$0.1628
DZT751-13
DISTI # DZT751DICT-ND		Diodes IncorporatedTRANS PNP 60V 3A SOT-223
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2318In Stock
  • 1000:$0.1843
  • 500:$0.2385
  • 100:$0.3036
  • 10:$0.4070
  • 1:$0.4700
DZT751-13
DISTI # DZT751DIDKR-ND		Diodes IncorporatedTRANS PNP 60V 3A SOT-223
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2318In Stock
  • 1000:$0.1843
  • 500:$0.2385
  • 100:$0.3036
  • 10:$0.4070
  • 1:$0.4700
DZT751-13
DISTI # DZT751DITR-ND		Diodes IncorporatedTRANS PNP 60V 3A SOT-223
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 25000:$0.1400
  • 12500:$0.1417
  • 5000:$0.1522
  • 2500:$0.1628
DZT751-13
DISTI # DZT751-13		Diodes IncorporatedTrans GP BJT PNP 60V 3A 4-Pin(3+Tab) SOT-223 T/R (Alt: DZT751-13)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 25000:€0.1019
  • 15000:€0.1089
  • 10000:€0.1249
  • 5000:€0.1339
  • 2500:€0.1849
DZT751-13
DISTI # DZT751-13		Diodes IncorporatedTrans GP BJT PNP 60V 3A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: DZT751-13)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$0.1019
  • 15000:$0.1039
  • 10000:$0.1089
  • 5000:$0.1139
  • 2500:$0.1199
DZT751-13
DISTI # 621-DZT751-13		Diodes IncorporatedBipolar Transistors - BJT PNP 1W
RoHS: Compliant		3340
  • 1:$0.5300
  • 10:$0.4340
  • 100:$0.2650
  • 1000:$0.2050
  • 2500:$0.1740
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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1986
Menge eingeben:
Der aktuelle Preis von DZT751-13 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,53 $
0,53 $
10
0,43 $
4,34 $
100
0,26 $
26,50 $
1000
0,20 $
205,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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