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BSC016N03MSGATMA1

BSC016N03MSGATMA1
Mfr. #:
BSC016N03MSGATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET LV POWER MOS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSC016N03MSGATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
BSC016N03MSGATMA1 DatasheetBSC016N03MSGATMA1 Datasheet (P4-P6)BSC016N03MSGATMA1 Datasheet (P7-P9)BSC016N03MSGATMA1 Datasheet (P10)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TDSON-8
Handelsname:
OptiMOS
Verpackung:
Spule
Höhe:
1.27 mm
Länge:
5.9 mm
Breite:
5.15 mm
Marke:
Infineon-Technologien
Produktart:
MOSFET
Unterkategorie:
MOSFETs
Teil # Aliase:
BSC016N03MS BSC16N3MSGXT G SP000311502
Tags
BSC016N03MSG, BSC016N03M, BSC016N03, BSC016, BSC01, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 30 V 1.6 mOhm 130 nC OptiMOS™ Power Mosfet - TDSON-8
***ment14 APAC
MOSFET, N CH, 100A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):1.3mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:125W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:100A; Power Dissipation Pd:125W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
***ure Electronics
Single N-Channel 30 V 2.5 mOhm 124 nC OptiMOS™ Power Mosfet - TDSON-8
***ment14 APAC
MOSFET, N CH, 100A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):1.7mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:96W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:100A; Power Dissipation Pd:96W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
***ure Electronics
N-Channel 25 V 30 A 0.00145 ohm SMT PowerTrench SyncFET Mosfet Power 56
***r Electronics
Power Field-Effect Transistor, 30A I(D), 25V, 0.00145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***nell
MOSFET, N CH, 25V, 49A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0012ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:89W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
The FDMS7560S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
***ure Electronics
Single N-Channel 30 V 2.5 W 61 nC PowerTrench Surface Mount Mosfet - POWER 56-8
***emi
N-Channel PowerTrench® MOSFET 30V, 175A, 1.8mΩ
***nell
MOSFET, N-CH, 30V, 175A, 83W, POWER 56; Transistor Polarity: N Channel; Continuous Drain Current Id: 175A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0015ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.5V; Power Dissipation Pd: 83W; Transistor Case Style: Power 56; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***r Electronics
Power Field-Effect Transistor, 30A I(D), 30V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed ang body diode reverse recovery performance.
***ure Electronics
Single N-Channel 30 V 1.5 mOhm 51 nC HEXFET® Power Mosfet - DirectFET®
***ineon SCT
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MT package rated at 34 amperes optimized with low on resistance., DIRECTFET, RoHS
***nell
MOSFET, N-CH, 30V, 192A, DIRECTFET MT-7; Transistor Polarity: N Channel; Continuous Drain Current Id: 192A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.; Available until stocks are exhausted Alternative available
***ineon
Benefits: Ultra-low RDS(on); Low Profile (less than 0.7 mm); Dual Sided Cooling Compatible; Ultra-low Package Inductance; Optimized for high speed switching or high current switch (Power Tool); Low Conduction and Switching Losses; Compatible with existing Surface Mount Techniques; StrongIRFET | Target Applications: Battery Operated Drive; Battery Protection; eFuse; Full-Bridge; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; ORing; Point of Load SyncFET; Push-Pull
***ical
Trans MOSFET N-CH 25V 32A 8-Pin Power 56 T/R
***r Electronics
Power Field-Effect Transistor, 32A I(D), 25V, 0.00125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***nell
MOSFET, N CH, 25V, 49A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.001ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:89W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
The FDMS7558S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rSyncFET Schottky Body Diode DS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
***ure Electronics
Single N-Channel 30 V 2.9 mOhm 45 nC OptiMOS™ Power Mosfet - TDSON-8
***ment14 APAC
MOSFET, N CH, 100A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):1.7mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:96W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:100A; Power Dissipation Pd:96W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
Teil # Mfg. Beschreibung Aktie Preis
BSC016N03MSGATMA1
DISTI # 31312055		Infineon Technologies AGTrans MOSFET N-CH 30V 28A 8-Pin TDSON EP T/R
RoHS: Compliant		5000
  • 5000:$0.5255
BSC016N03MSGATMA1
DISTI # BSC016N03MSGATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 30V 100A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$0.6949
BSC016N03MSGATMA1
DISTI # BSC016N03MSGATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 30V 100A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.8073
  • 500:$1.0225
  • 100:$1.3185
  • 10:$1.6680
  • 1:$1.8800
BSC016N03MSGATMA1
DISTI # BSC016N03MSGATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 30V 100A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.8073
  • 500:$1.0225
  • 100:$1.3185
  • 10:$1.6680
  • 1:$1.8800
BSC016N03MSGATMA1
DISTI # C1S322000464252		Infineon Technologies AGTrans MOSFET N-CH 30V 28A 8-Pin TDSON EP T/R
RoHS: Compliant		5000
  • 5000:$0.6360
BSC016N03MSGATMA1
DISTI # BSC016N03MSGATMA1		Infineon Technologies AGTrans MOSFET N-CH 30V 28A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC016N03MSGATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.6799
  • 10000:$0.6789
  • 20000:$0.6769
  • 30000:$0.6749
  • 50000:$0.6739
BSC016N03MSGATMA1
DISTI # 60R2473		Infineon Technologies AGMOSFET, N CH, 100A, 30V, PG-TDSON-8,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:30V,On Resistance Rds(on):1.3mohm,Rds(on) Test Voltage Vgs:10V,Power Dissipation Pd:125W,Operating RoHS Compliant: Yes0
  • 1:$1.6000
  • 10:$1.3700
  • 100:$1.0500
  • 500:$0.9290
  • 1000:$0.8090
  • 2500:$0.6570
  • 10000:$0.6360
BSC016N03MS G
DISTI # 726-BSC016N03MSG		Infineon Technologies AGMOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3M
RoHS: Compliant		6932
  • 1:$1.5600
  • 10:$1.3300
  • 100:$1.0300
  • 500:$0.9030
  • 1000:$0.7130
  • 5000:$0.6320
BSC016N03MSGATMA1
DISTI # BSC016N03MSGATMA1		Infineon Technologies AGTransistor: N-MOSFET,unipolar,30V,100A,125W,PG-TDSON-84821
  • 1:$0.8815
  • 5:$0.7920
  • 25:$0.7392
  • 100:$0.6864
BSC016N03MSGATMA1
DISTI # 1775423		Infineon Technologies AGMOSFET, N CH, 100A, 30V, PG-TDSON-8
RoHS: Compliant		1844
  • 5:£1.7300
  • 25:£1.4300
  • 100:£1.1300
  • 250:£1.0100
  • 500:£0.8790
Bild Teil # Beschreibung
BSC016N03LSGATMA1

Mfr.#: BSC016N03LSGATMA1

OMO.#: OMO-BSC016N03LSGATMA1

 MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
BSC016N04LSGATMA1

Mfr.#: BSC016N04LSGATMA1

OMO.#: OMO-BSC016N04LSGATMA1

 MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
BSC016N03LSGXT/BKN

Mfr.#: BSC016N03LSGXT/BKN

OMO.#: OMO-BSC016N03LSGXT-BKN-1190

 INSTOCK
BSC016N03LSGXT

Mfr.#: BSC016N03LSGXT

OMO.#: OMO-BSC016N03LSGXT-1190

 MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
BSC016N03MS

Mfr.#: BSC016N03MS

OMO.#: OMO-BSC016N03MS-1190

 Transistor: N-MOSFET, unipolar, 30V, 100A, 125W, PG-TDSON-8
BSC016N03MSGXT

Mfr.#: BSC016N03MSGXT

OMO.#: OMO-BSC016N03MSGXT-1190

 Neu und Original
BSC016N04LS

Mfr.#: BSC016N04LS

OMO.#: OMO-BSC016N04LS-1190

 100 A, 40 V, 0.0023 ohm, N-CHANNEL, Si, POWER, MOSFET
BSC016N06NS , TDA3629T ,

Mfr.#: BSC016N06NS , TDA3629T ,

OMO.#: OMO-BSC016N06NS-TDA3629T--1190

 Neu und Original
BSC016N06NSATMA1

Mfr.#: BSC016N06NSATMA1

OMO.#: OMO-BSC016N06NSATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 60V 30A TDSON-8
BSC016N06NSXT

Mfr.#: BSC016N06NSXT

OMO.#: OMO-BSC016N06NSXT-1190

 Neu und Original
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4500
Menge eingeben:
Der aktuelle Preis von BSC016N03MSGATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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