OMO ElectronicOMO Electronic
Expand menu
Hallo, melde dich anMein Konto
0 Wagen

CSD17309Q3

CSD17309Q3
Mfr. #:
CSD17309Q3
Beschreibung:
MOSFET 30V N Channel NexFET Power MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
CSD17309Q3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
CSD17309Q3 Mehr Informationen CSD17309Q3 Product Details
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
E
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SO-8
Anzahl der Kanäle:
2 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
20 V
Id - Kontinuierlicher Drainstrom:
8 A
Rds On - Drain-Source-Widerstand:
18 mOhms
Vgs th - Gate-Source-Schwellenspannung:
600 mV
Vgs - Gate-Source-Spannung:
4.5 V
Qg - Gate-Ladung:
22 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
3.1 W
Aufbau:
Dual
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET
Verpackung:
Spule
Höhe:
1.75 mm
Länge:
4.9 mm
Serie:
SI9
Transistortyp:
2 N-Channel
Breite:
3.9 mm
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
45 S
Abfallzeit:
12 ns
Produktart:
MOSFET
Anstiegszeit:
10 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
35 ns
Typische Einschaltverzögerungszeit:
15 ns
Teil # Aliase:
SI9926CDY-E3
Gewichtseinheit:
0.006596 oz
Tags
CSD1730, CSD173, CSD17, CSD1, CSD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***as Instruments
30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 6.3 mOhm 8-VSON-CLIP -55 to 150
*** Source Electronics
MOSFET N-CH 30V 60A 8SON / Trans MOSFET N-CH 30V 20A 8-Pin VSON-CLIP EP T/R
***nell
MOSFET, N-CH, 30V, 60A, VSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 60A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0042ohm; Rds(on) Test Voltage Vgs: 8V; Threshold Voltage Vgs: 1.2V; Powe
***th Star Micro
the nexfet power mosfet has been designed to minimize losses in power conversion applications and optimized for 5v gate drive applications.
***(Formerly Allied Electronics)
SUD42N03-3M9P-GE3 N-channel MOSFET Transistor; 107 A; 30 V; 3-Pin TO-252AA
***ure Electronics
SUD42N03 Series 30 V 3.9 mOhms SMT N-Channel Power Mosfet - TO-252
***ment14 APAC
MOSFET,N CH,DIODE,30V,42A,TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:30V; On Resistance Rds(on):3200µohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:2; SVHC:No SVHC (20-Jun-2011); Current Id Max:42A; Power Dissipation Pd:2.5W; Voltage Vgs Max:20V
***roFlash
Mosfet, Power; N-ch; Vdss 30V; Rds(on) 7.5MILLIOHMS; Id 65A; D-pak (TO-252AA); Pd 75W
***ure Electronics
Single N-Channel 30V 10 mOhm 10 nC HEXFET® Power Mosfet - TO-252AA
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
***ment14 APAC
N CHANNEL MOSFET, 30V, 65A, D-PAK; Trans; Transistor Polarity:N Channel; Continuous Drain Current Id:65A;
***nsix Microsemi
Power Field-Effect Transistor, 65A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance; Logic Level
***ark
Mosfet Transistor; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:65A; On Resistance Rds(On):0.0075Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; No. Of Pins:3Pins Rohs Compliant: Yes
***et
Transistor MOSFET N-Channel 25V 75A 3-Pin DPAK
***ark
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:75A; Drain Source Voltage, Vds:25V; On Resistance, Rds(on):5.3mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.5V ;RoHS Compliant: Yes
***nell
MOSFET, N CH, 25V, 75A, DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 25A; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 0.0053ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.5V; Power Dissipation Pd: 187W; Transistor Case Style: SOT-428; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Termination Type: Surface Mount Device; Transistor Type: Enhancement; Voltage Vds Typ: 25V; Voltage Vgs Rds on Measurement: 10V
***icroelectronics
N-CHANNEL 30V - 0.008 OHM - 70A D2PAK LOW GATE CHARGE STripFET MOSFET
***et
Trans MOSFET N-CH 30V 70A 3-Pin(2+Tab) D2PAK T/R
***SIT Distribution GmbH
Power Field-Effect Transistor, 70A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, N CH, 30V, 70A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 35A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0075ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 100W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 70A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 30V; Voltage Vgs Max: 16V; Voltage Vgs Rds on Measurement: 10V
***emi
N-Channel PowerTrench® SyncFET™ MOSFET, 30V, 55A, 10.5mΩ
***ure Electronics
N-Channel 30 V 55 A 10.5 mO Surface Mount PowerTrench Mosfet - DPAK
***r Electronics
Power Field-Effect Transistor, 55A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***ment14 APAC
MOSFET, N, SMD, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:30V; On Resistance Rds(on):10.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.4V; Power Dissipation Pd:60mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:55A; Package / Case:DPAK; Power Dissipation Pd:60mW; Pulse Current Idm:100A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***rchild Semiconductor
The FDD6680AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6680AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDD6680AS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDD6680A in parallel with a Schottky diode.
***AS INSRUMENTS
This 30 V, 4.2 mΩ NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5 V gate drive applications.
NexFET N-Channel Power MOSFETs
OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.
TI N-Channel 8-23-12
CSD17309Q3 NexFET™ Power MOSFET
The OMO Electronic CSD17309Q3 30 V N-Channel NexFET™ Power MOSFET is designed to minimize losses in power conversion applications and is optimized for 5V gate drive applications. The TI CSD17309Q3 N-Channel NexFET MOSFET features ultra low on-resistance and low thermal resistance and is ideal for notebook point of load and point-of-load synchronous buck in networking, telecom, and computing systems applications.
NexFET™ Power MOSFETs
OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Teil # Beschreibung Aktie Preis
CSD17309Q3
DISTI # V98:2334_07248762		Trans MOSFET N-CH 30V 20A 8-Pin VSON-CLIP EP T/R
RoHS: Compliant		1
  • 1:$1.0369
CSD17309Q3
DISTI # 296-27250-1-ND		MOSFET N-CH 30V 60A 8SON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		7156In Stock
  • 1000:$0.5540
  • 500:$0.7018
  • 100:$0.9049
  • 10:$1.1450
  • 1:$1.2900
CSD17309Q3
DISTI # 296-27250-6-ND		MOSFET N-CH 30V 60A 8SON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		7156In Stock
  • 1000:$0.5540
  • 500:$0.7018
  • 100:$0.9049
  • 10:$1.1450
  • 1:$1.2900
CSD17309Q3
DISTI # 296-27250-2-ND		MOSFET N-CH 30V 60A 8SON
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		5000In Stock
  • 5000:$0.4769
  • 2500:$0.5020
CSD17309Q3
DISTI # CSD17309Q3		Trans MOSFET N-CH 30V 20A 8-Pin SON T/R - Tape and Reel (Alt: CSD17309Q3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.4729
  • 5000:$0.4499
  • 10000:$0.4349
  • 15000:$0.4199
  • 25000:$0.4089
CSD17309Q3
DISTI # CSD17309Q3		Trans MOSFET N-CH 30V 20A 8-Pin SON T/R - Tape and Reel (Alt: CSD17309Q3)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Asia - 0
    CSD17309Q3
    DISTI # CSD17309Q3    		Trans MOSFET N-CH 30V 20A 8-Pin SON T/R (Alt: CSD17309Q3)
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape and Reel    		Europe - 0
    • 2500:€0.6459
    • 5000:€0.5279
    • 10000:€0.4839
    • 15000:€0.4149
    • 25000:€0.3869
    CSD17309Q3
    DISTI # 71Y7091    		MOSFET Transistor, N Channel, 60 A, 30 V, 0.0042 ohm, 8 V, 1.2 V RoHS Compliant: Yes2234
    • 1:$1.0700
    • 10:$0.9100
    • 25:$0.8400
    • 50:$0.7710
    • 100:$0.7010
    • 250:$0.6610
    • 500:$0.6200
    • 1000:$0.4890
    CSD17309Q330V N Channel NexFET&#153,Power MOSFET895
    • 1000:$0.3700
    • 750:$0.4100
    • 500:$0.5200
    • 250:$0.6400
    • 100:$0.6900
    • 25:$0.8100
    • 10:$0.8700
    • 1:$0.9800
    CSD17309Q3
    DISTI # 595-CSD17309Q3    		MOSFET 30V N Channel NexFET Power MOSFET
    RoHS: Compliant    		0
    • 1:$1.0700
    • 10:$0.9100
    • 100:$0.7010
    • 500:$0.6200
    • 1000:$0.4890
    • 2500:$0.4340
    • 10000:$0.4180
    CSD17309Q3
    DISTI # 8274830P    		MOSFET N-CHANNEL 30V 20A NEXFET SON8, RL575
    • 50:£0.6640
    • 100:£0.5100
    CSD17309Q3INSTOCK1357
      CSD17309Q3
      DISTI # 2501090      		MOSFET, N-CH, 30V, 60A, VSON-8
      RoHS: Compliant      		2254
      • 5:£0.7750
      • 25:£0.6950
      • 100:£0.5350
      • 250:£0.5040
      • 500:£0.4730
      CSD17309Q3
      DISTI # 2501090      		MOSFET, N-CH, 30V, 60A, VSON-8
      RoHS: Compliant      		2234
      • 1:$1.7000
      • 10:$1.4400
      • 100:$1.1200
      • 500:$0.9810
      • 1000:$0.7740
      • 2500:$0.6870
      Bild Teil # Beschreibung
      LM3421MH/NOPB

      Mfr.#: LM3421MH/NOPB

      OMO.#: OMO-LM3421MH-NOPB

      		 LED Lighting Drivers N-CH Cntlrs for Constnt Crnt LED Dvr
      DLPC6401ZFF

      Mfr.#: DLPC6401ZFF

      OMO.#: OMO-DLPC6401ZFF

      		 Digital Signal Processors & Controllers - DSP, DSC DLP Cntlr for Hi- Bright Prtble Dsplys
      TPS65982ABZQZR

      Mfr.#: TPS65982ABZQZR

      OMO.#: OMO-TPS65982ABZQZR

      		 USB Interface IC Ace A1 OTP MM2AB FERT
      CSD17577Q3A

      Mfr.#: CSD17577Q3A

      OMO.#: OMO-CSD17577Q3A

      		 MOSFET 30V, N-channel NexFET Pwr MOSFET
      BQ40Z50RSMR-R2

      Mfr.#: BQ40Z50RSMR-R2

      OMO.#: OMO-BQ40Z50RSMR-R2

      		 Battery Management BQ40Z50RSMR-R2
      BQ296114DSGR

      Mfr.#: BQ296114DSGR

      OMO.#: OMO-BQ296114DSGR

      		 Battery Management 2S-4S 2LP WITH LDO ENABLE/DISABLE
      PDS1040-13

      Mfr.#: PDS1040-13

      OMO.#: OMO-PDS1040-13

      		 Schottky Diodes & Rectifiers 10A 40V LFF
      TPS54335ADDAR

      Mfr.#: TPS54335ADDAR

      OMO.#: OMO-TPS54335ADDAR

      		 Switching Voltage Regulators 4.5-28V Input 3A Sync SD Cnvtr
      DLPDLCR4710EVM-G2

      Mfr.#: DLPDLCR4710EVM-G2

      OMO.#: OMO-DLPDLCR4710EVM-G2

      		 Display Development Tools Full HD DLP4710 Chipset EVM
      TPS65982-EVM

      Mfr.#: TPS65982-EVM

      OMO.#: OMO-TPS65982-EVM

      		 Power Management IC Development Tools TPS65982-EVM
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1987
      Menge eingeben:
      Der aktuelle Preis von CSD17309Q3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      1,07 $
      1,07 $
      10
      0,91 $
      9,10 $
      100
      0,70 $
      70,10 $
      500
      0,62 $
      310,00 $
      1000
      0,49 $
      489,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
      Beginnen mit
      Neueste Produkte
      More Newest Products
      Top