OMO ElectronicOMO Electronic
Expand menu
0 Wagen

SIS108DN-T1-GE3

SIS108DN-T1-GE3
Mfr. #:
SIS108DN-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET Nch 80V Vds 20V Vgs PowerPAK 1212-8
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIS108DN-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SIS108DN-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerPAK1212-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
80 V
Id - Kontinuierlicher Drainstrom:
16 A
Rds On - Drain-Source-Widerstand:
34 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
13 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
24 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET, PowerPAK
Verpackung:
Spule
Serie:
SIS
Transistortyp:
1 N-Channel
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
28 S
Abfallzeit:
5 ns
Produktart:
MOSFET
Anstiegszeit:
5 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
14 ns
Typische Einschaltverzögerungszeit:
10 ns
Tags
SIS10, SIS1, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Teil # Mfg. Beschreibung Aktie Preis
SIS108DN-T1-GE3
DISTI # SIS108DN-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 80V PPAK 1212-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		50In Stock
  • 1000:$0.4271
  • 500:$0.5410
  • 100:$0.6549
  • 10:$0.8400
  • 1:$0.9400
SIS108DN-T1-GE3
DISTI # SIS108DN-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 80V PPAK 1212-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		50In Stock
  • 1000:$0.4271
  • 500:$0.5410
  • 100:$0.6549
  • 10:$0.8400
  • 1:$0.9400
SIS108DN-T1-GE3
DISTI # SIS108DN-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 80V PPAK 1212-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 15000:$0.3539
  • 6000:$0.3677
  • 3000:$0.3871
SIS108DN-T1-GE3
DISTI # 06AH4244		Vishay IntertechnologiesMOSFET, N-CH, 80V, 16A, 150DEG C, 24W,Transistor Polarity:N Channel,Continuous Drain Current Id:16A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.028ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes50
  • 500:$0.4980
  • 250:$0.5630
  • 100:$0.6710
  • 50:$0.7390
  • 25:$0.8200
  • 10:$0.9050
  • 1:$0.9560
SIS108DN-T1-GE3
DISTI # 78-SIS108DN-T1-GE3		Vishay IntertechnologiesMOSFET Nch 80V Vds 20V Vgs PowerPAK 1212-8
RoHS: Compliant		50
  • 1:$0.9200
  • 10:$0.7580
  • 100:$0.5810
  • 500:$0.5000
  • 1000:$0.3940
  • 3000:$0.3680
  • 6000:$0.3500
  • 9000:$0.3370
  • 24000:$0.3260
SIS108DN-T1-GE3
DISTI # 3104159		Vishay IntertechnologiesMOSFET, N-CH, 80V, 16A, 150DEG C, 24W
RoHS: Compliant		50
  • 1000:$0.4940
  • 500:$0.5740
  • 250:$0.6380
  • 100:$0.6850
  • 10:$0.8610
  • 1:$0.9880
SIS108DN-T1-GE3
DISTI # 3104159		Vishay IntertechnologiesMOSFET, N-CH, 80V, 16A, 150DEG C, 24W40
  • 500:£0.3690
  • 250:£0.4090
  • 100:£0.4480
  • 10:£0.6440
  • 1:£0.8250
Bild Teil # Beschreibung
SIS108DN-T1-GE3

Mfr.#: SIS108DN-T1-GE3

OMO.#: OMO-SIS108DN-T1-GE3

 MOSFET Nch 80V Vds 20V Vgs PowerPAK 1212-8
SIS108DN-T1-GE3

Mfr.#: SIS108DN-T1-GE3

OMO.#: OMO-SIS108DN-T1-GE3-1190

 MOSFET N-CH 80V PPAK 1212-8
Verfügbarkeit
Aktie:
50
Auf Bestellung:
2033
Menge eingeben:
Der aktuelle Preis von SIS108DN-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,92 $
0,92 $
10
0,76 $
7,58 $
100
0,58 $
58,10 $
500
0,50 $
250,00 $
1000
0,39 $
394,00 $
Beginnen mit
Neueste Produkte
More Newest Products
Top