SSM3J358R,LF

SSM3J358R,LF
Mfr. #:
SSM3J358R,LF
Hersteller:
Toshiba
Beschreibung:
MOSFET LowON Res MOSFET ID=-6A VDSS=-20V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SSM3J358R,LF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SSM3J358R,LF DatasheetSSM3J358R,LF Datasheet (P4-P6)SSM3J358R,LF Datasheet (P7-P9)
ECAD Model:
Mehr Informationen:
SSM3J358R,LF Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Toshiba
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SOT-23F-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
P-Kanal
Vds - Drain-Source-Durchbruchspannung:
20 V
Id - Kontinuierlicher Drainstrom:
6 A
Rds On - Drain-Source-Widerstand:
17.5 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1 V
Vgs - Gate-Source-Spannung:
10 V
Qg - Gate-Ladung:
38.5 nC
Minimale Betriebstemperatur:
-
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
2 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Transistortyp:
1 P-Channel
Marke:
Toshiba
Vorwärtstranskonduktanz - Min:
12.3 S
Produktart:
MOSFET
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
393 ns
Typische Einschaltverzögerungszeit:
35 ns
Tags
SSM3J35, SSM3J3, SSM3J, SSM3, SSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Small Low ON Resistance MOSFET P-Channel 20V 6A 3-Pin SOT-23F T/R
***ical
Trans MOSFET P-CH Si 20V 6A 3-Pin SOT-23F T/R
***i-Key
MOSFET P-CH 20V 6A SOT23F
SSM3 High Current MOSFETs
Toshiba SSM3 High Current MOSFETs provide a high drain current rating, low capacitance, low on-resistance, and fast switching. Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) are semiconductor devices used for switching and amplifying electronic signals in electronic devices. Applications include mobile devices (wearable device, smart phone, tablet PC, etc.), load switches, DC-DC converters, and general purpose switches. 
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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1993
Menge eingeben:
Der aktuelle Preis von SSM3J358R,LF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,54 $
0,54 $
10
0,31 $
3,12 $
100
0,15 $
14,80 $
1000
0,11 $
114,00 $
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