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FCA36N60NF

FCA36N60NF
Mfr. #:
FCA36N60NF
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET 600V N-Ch SupreMOS FRFET MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FCA36N60NF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
FCA36N60NF Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-3PN-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
34.9 A
Rds On - Drain-Source-Widerstand:
80 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3.7 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
86 nC
Pd - Verlustleistung:
312 W
Aufbau:
Single
Handelsname:
SupreMOS FRFET
Verpackung:
Rohr
Höhe:
20.1 mm
Länge:
16.2 mm
Serie:
FCA36N60NF
Transistortyp:
1 N-Channel
Breite:
5 mm
Marke:
ON Semiconductor / Fairchild
Vorwärtstranskonduktanz - Min:
39 S
Abfallzeit:
4 ns
Produktart:
MOSFET
Anstiegszeit:
17 ns
Werkspackungsmenge:
450
Unterkategorie:
MOSFETs
Gewichtseinheit:
0.225789 oz
Tags
FCA3, FCA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
Power MOSFET, N-Channel, SUPREMOS®, FRFET®, 600 V, 34.9 A, 95 mΩ, TO-3P
***Components
N-Channel MOSFET, 35 A, 600 V, 3-Pin TO-3PN ON Semiconductor FCA36N60NF
***et
Trans MOSFET N-CH 600V 34.9A 3-Pin(3+Tab) TO-3P(N) Rail
***p One Stop Global
Trans MOSFET N-CH 600V 34.9A 3-Pin(3+Tab) TO-3PN Rail
***i-Key
MOSFET N-CH 600V 34.9A TO3PN
***ark
MOSFET, N CH, 600V, 34.9A, TO3PN; Transistor Polarity:N Channel; Continuous Drain Current Id:34.9A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.08ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.7V ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N CH, 600V, 34.9A, TO3PN; Transistor Polarity:N Channel; Continuous Drain Current Id:34.9A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.08ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.7V; Power Dissipation Pd:312W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-3PN; No. of Pins:3; SVHC:No SVHC (18-Jun-2012)
***rchild Semiconductor
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SupreMOS FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
SupreMOS™ Super-Junction MOSFETs
ON Semiconductor SupreMOS™ Super-Junction MOSFETs are the next generation of high voltage super-junction MOSFETs which employ a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing advanced technology and precise process control, these SupreMOS™ Super-Junction MOSFETs provide world class Rsp, superior switching performance and ruggedness. Features include ultra low gate charge, low effective output capacitance and are 100% avalanche tested. These SupreMOS™ MOSFETs fit the industry's AC-DC SMPS requirements for PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications.Learn More
Teil # Mfg. Beschreibung Aktie Preis
FCA36N60NF
DISTI # V79:2366_17796495		ON SemiconductorSM 600V 95MOHM F TO3PN224
  • 250:$6.2630
  • 100:$6.5560
  • 25:$7.3740
  • 10:$7.7230
  • 1:$8.4050
FCA36N60NF
DISTI # FCA36N60NF-ND		ON SemiconductorMOSFET N-CH 600V 34.9A TO3PN
RoHS: Compliant
Min Qty: 1
Container: Tube		405In Stock
  • 10:$10.9400
  • 1:$12.1600
FCA36N60NF
DISTI # 26119305		ON SemiconductorSM 600V 95MOHM F TO3PN224
  • 100:$6.5560
  • 25:$7.3740
  • 10:$7.7230
  • 2:$8.4050
FCA36N60NF
DISTI # FCA36N60NF		ON SemiconductorTrans MOSFET N-CH 600V 34.9A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube (Alt: FCA36N60NF)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 450:$5.6900
  • 900:$5.6900
  • 1800:$5.5900
  • 2700:$5.4900
  • 4500:$5.3900
FCA36N60NF
DISTI # 54T8299		ON SemiconductorSM 600V 95MOHM F TO3PN / TUBE0
  • 1:$9.9500
  • 10:$8.9300
  • 25:$8.1400
  • 50:$7.6100
  • 100:$7.0800
  • 250:$5.9300
  • 500:$5.7500
FCA36N60NF
DISTI # 512-FCA36N60NF		ON SemiconductorMOSFET 600V N-Ch SupreMOS FRFET MOSFET
RoHS: Compliant		339
  • 1:$10.5200
  • 10:$9.5100
  • 25:$9.0700
  • 100:$7.8700
  • 250:$7.5200
FCA36N60NFFairchild Semiconductor CorporationPower Field-Effect Transistor, 34.9A I(D), 600V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		1405
  • 1000:$6.4600
  • 500:$6.8000
  • 100:$7.0800
  • 25:$7.3800
  • 1:$7.9500
FCA36N60NF
DISTI # 8651233P		ON SemiconductorMOSFET NCH 600V 34A SUPREMOS FRFET TO3PN, TU166
  • 5:£7.3400
  • 50:£6.7900
  • 225:£5.9000
  • 450:£5.6300
FCA36N60NFON SemiconductorPower Field-Effect Transistor, 34.9A I(D), 600V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		Europe - 450
    FCA36N60NF
    DISTI # C1S541901508124    		ON SemiconductorTrans MOSFET N-CH 600V 34.9A 3-Pin(3+Tab) TO-3PN Tube
    RoHS: Compliant    		224
    • 100:$6.5490
    • 25:$7.3620
    • 10:$7.7580
    • 1:$8.3750
    FCA36N60NF
    DISTI # 1971834    		ON SemiconductorMOSFET, N CH, 600V, 34.9A, TO3PN
    RoHS: Compliant    		0
    • 1:£8.3700
    • 5:£7.8100
    • 10:£6.7400
    • 50:£6.3000
    • 100:£5.8500
    Bild Teil # Beschreibung
    D1870L

    Mfr.#: D1870L

    OMO.#: OMO-D1870L-1190

    		 Current Transformers D18xx Current Sensor 24A 20-50kHz
    Verfügbarkeit
    Aktie:
    518
    Auf Bestellung:
    2501
    Menge eingeben:
    Der aktuelle Preis von FCA36N60NF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    6,88 $
    6,88 $
    10
    6,22 $
    62,20 $
    25
    5,93 $
    148,25 $
    100
    5,14 $
    514,00 $
    250
    4,91 $
    1 227,50 $
    500
    4,48 $
    2 240,00 $
    1000
    3,90 $
    3 900,00 $
    2500
    3,76 $
    9 400,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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