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FDT461N

FDT461N
Mfr. #:
FDT461N
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET NCH LOGIC ENHANCEMEN MODFIELD EFFECT TRAN
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDT461N Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
FDT461N DatasheetFDT461N Datasheet (P4-P6)FDT461N Datasheet (P7-P9)FDT461N Datasheet (P10)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
E
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SOT-223-4
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
100 V
Id - Kontinuierlicher Drainstrom:
400 mA
Rds On - Drain-Source-Widerstand:
1.4 Ohms
Vgs - Gate-Source-Spannung:
20 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
1.13 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Höhe:
1.8 mm
Länge:
6.5 mm
Produkt:
MOSFET Kleinsignal
Transistortyp:
1 N-Channel
Typ:
MOSFET
Breite:
3.5 mm
Marke:
ON Semiconductor / Fairchild
Abfallzeit:
1.3 ns
Produktart:
MOSFET
Anstiegszeit:
1.3 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
63 ns
Typische Einschaltverzögerungszeit:
3 ns
Teil # Aliase:
FDT461N_NL
Gewichtseinheit:
0.003951 oz
Tags
FDT4, FDT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Yang
N-Channel 100V 540mA (Ta) 1.13W (Ta) Surface Mount SOT-223-4 - Bulk
***i-Key
MOSFET N-CH 100V 0.54A SOT-223
***inecomponents.com
100V N-Channel Logic Level PowerTrench MOSFET
***ser
MOSFETs NCH LOGIC ENHANCEMEN MODFIELD EFFECT TRAN
***or
MOSFET N-CH 100V 540MA SOT223-4
***ure Electronics
Single N-Channel 100 V 2 W Silicon Surface Mount Mosfet - SOT-223
***ical
Trans MOSFET N-CH 100V 0.8A Automotive 4-Pin(3+Tab) SOT-223 T/R
***ark
MOSFET, N CHANNEL, 100V, 0.8A, SOT223; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:800mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:800mV RoHS Compliant: Yes
***nell
MOSFET, N CH, 100V, 0.8A, SOT223; Transistor Polarity: N Channel; Continuous Drain Current Id: 800mA; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 1.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 800mV; Power Dissipation Pd: 2W; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (15-Jan-2019); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C
***ure Electronics
Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - SOT-223
***ical
Trans MOSFET N-CH 100V 1.5A 4-Pin(3+Tab) SOT-223 T/R
***nell
MOSFET, N; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.5A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.54ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Power Dissipation Pd: 2W; Transistor Case Style: SOT-223; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; Current Id Max: 1.5A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Voltage Vds Typ: 100V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V
*** Stop Electro
Small Signal Field-Effect Transistor, 1.5A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
***(Formerly Allied Electronics)
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.2Ohm; ID 1.6A; SOT-223; PD 1W; VGS +/-20V; -55
***ure Electronics
Single N-Channel 100 V 0.2 Ohm 17 nC HEXFET® Power Mosfet - SOT-223
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a SOT-223 package, SOT223-4, RoHS
***ical
Trans MOSFET N-CH Si 100V 2.2A 4-Pin(3+Tab) SOT-223 Tube
***S.I.T. Europe - USA - Asia
Small Signal Field-Effect Transistor, 1.6A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ark
Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:1.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:1W; No. of Pins:4Pins RoHS Compliant: Yes
***nell
MOSFET, N, 100V, 1.6A, SOT-223; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.6A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 2.1W; Transistor Case Style: SOT-223; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Temperature: 25°C; External Depth: 7.3mm; External Length / Height: 1.7mm; External Width: 6.7mm; Full Power Rating Temperature: 25°C; Junction to Case Thermal Resistance A: 60°C/W; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 13A; SMD Marking: FL4310; Tape Width: 12mm; Termination Type: Surface Mount Device; Voltage Vds Typ: 100V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 4V
***klin Elektronik
INFINEON SMD Autom. MOSFET NFET 100V 1,8A 230mΩ 150°C SOT-223 BSP372
***p One Stop
Trans MOSFET N-CH 100V 1.8A Automotive 4-Pin(3+Tab) SOT-223 T/R
***ure Electronics
Single N-Channel 100 V 270 mOhm 14.3 nC OptiMOS™ Power Mosfet - SOT-223
***Yang
Trans MOSFET N-CH 100V 1.8A 4-Pin SOT-223 T/R - Product that comes on tape, but is not reeled (Alt:
***ment14 APAC
MOSFET, N-CH, 100V, 1.8A, SOT-223-4; Transistor Polarity:N Channel; Continuous Drain Current Id:1.8A; Source Voltage Vds:100V; On Resistance
***ark
MOSFET, N-CH, 100V, 1.8A, 150DEG C, 1.8W; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:1.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.4V RoHS Compliant: Yes
***ineon
All Small Signal n-channel products are suitable for automotive applications (excluding 2N7002). | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Onboard charger; Telecom
***nell
MOSFET, N-CH, 100V, 1.8A, SOT-223-4; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.8A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.153ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.4V; Power Dissipation Pd: 1.8W; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 1.8 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 230 / Gate-Source Voltage V = 20 / Fall Time ns = 18 / Rise Time ns = 6.7 / Turn-OFF Delay Time ns = 47.3 / Turn-ON Delay Time ns = 5.1 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 1.8
***emi
Power MOSFET, N-Channel, Logic Level, QFET®, 100 V, 1.7 A, 350 mΩ, SOT-223
***eco
Transistor MOSFET N-Channel 100 Volt 1.7A 4-Pin(3+Tab) SOT-223
*** Source Electronics
Trans MOSFET N-CH 100V 1.7A 4-Pin(3+Tab) SOT-223 T/R / MOSFET N-CH 100V 1.7A SOT-223
***ure Electronics
N-Channel 100 V 0.35 Ohm Surface Mount Mosfet - SOT-223
***Yang
Trans MOSFET N-CH 100V 1.7A 4-Pin(3+Tab) SOT-223 T/R - Product that comes on tape, but is not reeled
***nell
N CH MOSFET, 100V, 1.7A, SOT-223; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.7A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.275ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 2W; Transistor Case Style: SOT-223; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Operating Temperature Min: -55°C
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 1.7 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 380 / Gate-Source Voltage V = 20 / Fall Time ns = 110 / Rise Time ns = 210 / Turn-OFF Delay Time ns = 45 / Turn-ON Delay Time ns = 30 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 2
***(Formerly Allied Electronics)
IRFL9110TRPBF P-channel MOSFET Transistor; 0.69 A; 100 V; 3 + Tab-Pin SOT-223
***ure Electronics
Single P-Channel 100 V 1.2 Ohms Surface Mount Power Mosfet - SOT-223-3
*** Stop Electro
Small Signal Field-Effect Transistor, 1.1A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
Teil # Mfg. Beschreibung Aktie Preis
FDT461N
DISTI # FDT461N-ND		ON SemiconductorMOSFET N-CH 100V 0.54A SOT-223
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
    FDT461NFairchild Semiconductor CorporationPower Field-Effect Transistor, 0.54A I(D), 100V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant    		47000
    • 1000:$0.4500
    • 500:$0.4700
    • 100:$0.4900
    • 25:$0.5100
    • 1:$0.5500
    FDT461N
    DISTI # 512-FDT461N    		ON SemiconductorMOSFET NCH LOGIC ENHANCEMEN MODFIELD EFFECT TRAN
    RoHS: Compliant    		0
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      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      2000
      Menge eingeben:
      Der aktuelle Preis von FDT461N dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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