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2SCR502U3HZGT106

2SCR502U3HZGT106
Mfr. #:
2SCR502U3HZGT106
Hersteller:
Rohm Semiconductor
Beschreibung:
Bipolar Transistors - BJT NPN 30V 0.5A 0.2W SOT-323
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
2SCR502U3HZGT106 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
2SCR502U3HZGT106 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ROHM Halbleiter
Produktkategorie:
Bipolartransistoren - BJT
RoHS:
Y
Montageart:
SMD/SMT
Paket / Koffer:
SOT-323-3
Polarität des Transistors:
NPN
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
30 V
Kollektor- Basisspannung VCBO:
30 V
Emitter- Basisspannung VEBO:
6 V
Kollektor-Emitter-Sättigungsspannung:
100 mV
Maximaler DC-Kollektorstrom:
1 A
Bandbreitenprodukt fT gewinnen:
360 MHz
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
DC-Stromverstärkung hFE Max:
500
Verpackung:
Spule
Marke:
ROHM Halbleiter
Kontinuierlicher Kollektorstrom:
0.5 A
DC-Kollektor/Basisverstärkung hfe Min:
200
Pd - Verlustleistung:
200 mW
Produktart:
BJTs - Bipolartransistoren
Werkspackungsmenge:
3000
Unterkategorie:
Transistoren
Tags
2SCR502U, 2SCR50, 2SCR5, 2SCR, 2SC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
2Sx Bipolar Junction Transistors
ROHM 2Sx Bipolar Junction Transistors (BJTs) are designed for use in industrial and consumer applications. These BJTs are available in both PNP and NPN polarities. The 2Sx BJT devices are housed in a variety of packages and are designed for medium power surface mount applications. The 2Sx BJTs feature a wide storage temperature (Tstg) range of -55ºC to 150ºC, and a junction temperature (TJ) of 150ºC. Typical applications include general purpose small signal amplifiers, power supplies, high-speed switching, and low-frequency amplifiers. 
AEC-Q101 Qualified Transistors
ROHM Semiconductor AEC-Q101 Qualified Transistors feature NPN, PNP, and dual transistors with or without built-in resistors. These transistors include middle power transistors, low-frequency amplifiers, general purpose digital (bias resistor built-in) transistors, dual digital transistors, and medium power transistors. The AEC-Q101 qualified transistors offer variants with different VCC, VCEO and IC ratings. These transistors feature built-in bias resistors which enable the desired configuration without connecting external input resistors.
Teil # Mfg. Beschreibung Aktie Preis
2SCR502U3HZGT106
DISTI # 2SCR502U3HZGT106CT-ND		ROHM Semiconductor2SCR502U3HZG IS THE GENERAL PURP
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2980In Stock
  • 1000:$0.1055
  • 500:$0.1371
  • 250:$0.1688
  • 100:$0.2004
  • 25:$0.2900
  • 10:$0.3220
  • 1:$0.4300
2SCR502U3HZGT106
DISTI # 2SCR502U3HZGT106DKR-ND		ROHM Semiconductor2SCR502U3HZG IS THE GENERAL PURP
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2980In Stock
  • 1000:$0.1055
  • 500:$0.1371
  • 250:$0.1688
  • 100:$0.2004
  • 25:$0.2900
  • 10:$0.3220
  • 1:$0.4300
2SCR502U3HZGT106
DISTI # 2SCR502U3HZGT106TR-ND		ROHM Semiconductor2SCR502U3HZG IS THE GENERAL PURP
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 75000:$0.0717
  • 30000:$0.0742
  • 15000:$0.0794
  • 6000:$0.0870
  • 3000:$0.0922
2SCR502U3HZGT106
DISTI # 81AC5857		ROHM SemiconductorTRANSISTOR, AEC-Q101, NPN, 30V, 0.5A,Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:30V,Transition Frequency ft:360MHz,Power Dissipation Pd:200mW,DC Collector Current:500mA,DC Current Gain hFE:200hFE,Transistor RoHS Compliant: Yes0
  • 1000:$0.1040
  • 500:$0.1140
  • 250:$0.1250
  • 100:$0.1350
  • 50:$0.1880
  • 25:$0.2410
  • 10:$0.2940
  • 1:$0.4240
2SCR502U3HZGT106
DISTI # 755-2SCR502U3HZGT106		ROHM SemiconductorBipolar Transistors - BJT NPN 30V 0.5A 0.2W SOT-323
RoHS: Compliant		2970
  • 1:$0.4200
  • 10:$0.2910
  • 100:$0.1340
  • 1000:$0.1030
  • 3000:$0.0880
2SCR502U3HZGT106ROHM SemiconductorBipolar Transistors - BJT NPN 30V 0.5A 0.2W SOT-323
RoHS: Compliant		Americas -
    2SCR502U3HZGT106
    DISTI # 2948277    		ROHM SemiconductorTRANSISTOR, AEC-Q101, NPN, 30V, 0.5A
    RoHS: Compliant    		0
    • 5000:$0.1120
    • 1000:$0.1240
    • 500:$0.1610
    • 250:$0.1850
    • 100:$0.2040
    • 25:$0.3810
    • 5:$0.4080
    2SCR502U3HZGT106
    DISTI # 2948277    		ROHM SemiconductorTRANSISTOR, AEC-Q101, NPN, 30V, 0.5A0
    • 500:£0.0812
    • 250:£0.0979
    • 100:£0.1030
    • 25:£0.2330
    • 5:£0.2420
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    OMO.#: OMO-CGA2B2C0G1H221J050BA-TDK

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    OMO.#: OMO-CGA2B2X7R1H102K050BA-TDK

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    UCC27511AQDBVRQ1

    Mfr.#: UCC27511AQDBVRQ1

    OMO.#: OMO-UCC27511AQDBVRQ1-TEXAS-INSTRUMENTS

    		 Neu und Original
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1985
    Menge eingeben:
    Der aktuelle Preis von 2SCR502U3HZGT106 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,42 $
    0,42 $
    10
    0,29 $
    2,91 $
    100
    0,13 $
    13,40 $
    1000
    0,10 $
    103,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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