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If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| FMH20N50ES DISTI # FE0000000000949 | Fuji Electric Co Ltd | Power Field-Effect Transistor, 20A I(D),500V,0.31ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET RoHS: Compliant | 0 in Stock0 on Order | |
| FMH20N50ESSCQ-P DISTI # FE0000000004452 | Fuji Electric Co Ltd | MOSFET RoHS: Compliant | 0 in Stock0 on Order | |
| FMH20N50E-S33PPSCQ-P DISTI # FE0000000004449 | Fuji Electric Co Ltd | MOSFET RoHS: Compliant | 0 in Stock0 on Order | |
| FMH20N50ESCQ-P DISTI # FE0000000004451 | Fuji Electric Co Ltd | MOSFET RoHS: Compliant | 0 in Stock0 on Order | |
| FMH20N50ES-S33PPQ-P DISTI # FE0000000004450 | Fuji Electric Co Ltd | MOSFET RoHS: Compliant | 0 in Stock0 on Order |
| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: FMH2017FDA OMO.#: OMO-FMH2017FDA-1190 |
Neu und Original |
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Mfr.#: FMH20N50E OMO.#: OMO-FMH20N50E-1190 |
Power Field-Effect Transistor, 20A I(D),500V,0.31ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
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Mfr.#: FMH20N50ES OMO.#: OMO-FMH20N50ES-1190 |
Power Field-Effect Transistor, 20A I(D),500V,0.31ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
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Mfr.#: FMH20N60S1 OMO.#: OMO-FMH20N60S1-1190 |
MOSFET, N CHANNEL, 600V, 20A, TO-3P-3, Transistor Polarity:N Channel, Continuous Drain Current Id:20A, Drain Source Voltage Vds:600V, On Resistance Rds(on):0.161ohm, Rds(on) Test Voltage Vgs:10V, |
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Mfr.#: FMH20N60S1HF OMO.#: OMO-FMH20N60S1HF-1190 |
Neu und Original |
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Mfr.#: FMH20N60S1HF,FMH20N60,20 |
Neu und Original |
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Mfr.#: FMH20N60S1HF-65-S33PP |
Neu und Original |
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Mfr.#: FMH20N60S1HF-S33PP OMO.#: OMO-FMH20N60S1HF-S33PP-1190 |
Neu und Original |