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IRFS23N20DTRLP

IRFS23N20DTRLP
Mfr. #:
IRFS23N20DTRLP
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET MOSFT 200V 24A 100mOhm 57nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRFS23N20DTRLP Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFS23N20DTRLP DatasheetIRFS23N20DTRLP Datasheet (P4-P6)IRFS23N20DTRLP Datasheet (P7-P9)IRFS23N20DTRLP Datasheet (P10-P12)
ECAD Model:
Mehr Informationen:
IRFS23N20DTRLP Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-252-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
200 V
Id - Kontinuierlicher Drainstrom:
24 A
Rds On - Drain-Source-Widerstand:
100 mOhms
Vgs th - Gate-Source-Schwellenspannung:
5.5 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
57 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
38 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Höhe:
2.3 mm
Länge:
6.5 mm
Transistortyp:
1 N-Channel
Breite:
6.22 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
13 S
Abfallzeit:
16 ns
Produktart:
MOSFET
Anstiegszeit:
32 ns
Werkspackungsmenge:
800
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
26 ns
Typische Einschaltverzögerungszeit:
14 ns
Teil # Aliase:
SP001571644
Gewichtseinheit:
0.139332 oz
Tags
IRFS23N20DT, IRFS23N2, IRFS23, IRFS2, IRFS, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
IRFS23N20DPBF N-channel MOSFET Transistor; 24 A; 200 V; 3-Pin D2PAK
***ure Electronics
Single N-Channel 200 V 3.8 W 57 nC Hexfet Power Mosfet Surface Mount - D2PAK-3
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ical
Trans MOSFET N-CH 200V 24A 3-Pin(2+Tab) D2PAK Tube
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
***nell
MOSFET, N, 200V, 24A, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 24A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5.5V; Power Dissipation Pd: 3.8W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Alternate Case Style: D2-PAK; Current Id Max: 24A; Junction to Case Thermal Resistance A: 0.9°C/W; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Power Dissipation Ptot Max: 38W; Power Dissipation on 1" Sq. PCB: 3.8W; Pulse Current Idm: 96A; SMD Marking: FS23N20D; Termination Type: Surface Mount Device; Voltage Vds: 200V; Voltage Vds Typ: 200V; Voltage Vgs Max: 5.5V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 5.5V
200-250V HEXFET® Power MOSFETs
Infineon 200-250V HEXFET® Power MOSFETs offer a broad range of MOSFETs in various packages, current and RDS(on) ratings. These 200-250V HEXFET® Power MOSFETs utilize the latest processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Infineon HEXFET® Power MOSFETs are known for provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.Learn More
Teil # Mfg. Beschreibung Aktie Preis
IRFS23N20DTRLP
DISTI # V72:2272_13891520		Infineon Technologies AGTrans MOSFET N-CH 200V 24A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		800
  • 500:$1.2503
  • 250:$1.3691
  • 100:$1.4165
  • 25:$1.6920
  • 10:$1.7119
  • 1:$1.9458
IRFS23N20DTRLP
DISTI # IRFS23N20DTRLPCT-ND		Infineon Technologies AGMOSFET N-CH 200V 24A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1287In Stock
  • 100:$2.1478
  • 10:$2.6730
  • 1:$2.9600
IRFS23N20DTRLP
DISTI # IRFS23N20DTRLPDKR-ND		Infineon Technologies AGMOSFET N-CH 200V 24A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1287In Stock
  • 100:$2.1478
  • 10:$2.6730
  • 1:$2.9600
IRFS23N20DTRLP
DISTI # IRFS23N20DTRLPTR-ND		Infineon Technologies AGMOSFET N-CH 200V 24A D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)		800In Stock
  • 800:$1.4643
IRFS23N20DTRLP
DISTI # 30701940		Infineon Technologies AGTrans MOSFET N-CH 200V 24A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		800
  • 800:$1.4696
IRFS23N20DTRLP
DISTI # 30334308		Infineon Technologies AGTrans MOSFET N-CH 200V 24A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		800
  • 500:$1.2503
  • 250:$1.3691
  • 100:$1.4165
  • 25:$1.6920
  • 10:$1.7119
  • 8:$1.9458
IRFS23N20DTRLP
DISTI # IRFS23N20DTRLP		Infineon Technologies AGTrans MOSFET N-CH 200V 24A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRFS23N20DTRLP)
RoHS: Compliant
Min Qty: 800
Container: Reel		Americas - 0
  • 800:$0.9709
  • 1600:$0.9359
  • 3200:$0.9019
  • 4800:$0.8709
  • 8000:$0.8559
IRFS23N20DTRLP
DISTI # 70017792		Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 200V,RDS(ON) 0.1Ohm,ID 24A,D2Pak,PD 170W,VGS +/-30V,-55d
RoHS: Compliant		0
  • 800:$1.4800
IRFS23N20DTRLP
DISTI # 942-IRFS23N20DTRLP		Infineon Technologies AGMOSFET MOSFT 200V 24A 100mOhm 57nC
RoHS: Compliant		667
  • 1:$2.4800
  • 10:$2.1100
  • 100:$1.6900
  • 500:$1.4800
  • 800:$1.2300
IRFS23N20DTRLP
DISTI # 2781136		Infineon Technologies AGMOSFET, N-CH, 200V, 24A, TO-263AB
RoHS: Compliant		399
  • 1:$2.3400
  • 10:$2.1900
  • 100:$1.9300
  • 250:$1.8300
  • 500:$1.7300
  • 1000:$1.6500
IRFS23N20DTRLP
DISTI # 2781136		Infineon Technologies AGMOSFET, N-CH, 200V, 24A, TO-263AB
RoHS: Compliant		549
  • 1:£1.9400
  • 10:£1.6500
  • 100:£1.3200
  • 250:£1.1400
  • 500:£0.9610
IRFS23N20DTRLP
DISTI # C1S322000494466		Infineon Technologies AGTrans MOSFET N-CH 200V 24A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		800
  • 800:$1.3300
IRFS23N20DTRLP
DISTI # C1S322000494475		Infineon Technologies AGTrans MOSFET N-CH 200V 24A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		800
  • 250:$1.3691
  • 100:$1.4165
  • 25:$1.6920
  • 10:$1.7119
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OMO.#: OMO-RC0603FR-071KL

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OMO.#: OMO-AMC1100DWVR-TEXAS-INSTRUMENTS

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Mfr.#: LRS-350-12

OMO.#: OMO-LRS-350-12-MEAN-WELL

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Mfr.#: AC0603KRX7R9BB102

OMO.#: OMO-AC0603KRX7R9BB102-YAGEO

 Cap Ceramic 0.001uF 50V X7R 10% SMD 0603 125C Automotive
AC0603KRX7R9BB473

Mfr.#: AC0603KRX7R9BB473

OMO.#: OMO-AC0603KRX7R9BB473-YAGEO

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C4AEHBU4330A1WJ

Mfr.#: C4AEHBU4330A1WJ

OMO.#: OMO-C4AEHBU4330A1WJ-KEMET

 Cap Film 3.3uF 600V PP 5% (31.5 X 11 X 20mm) Radial 27.5mm 0.017 Ohm 85C Bulk
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OMO.#: OMO-MURS160T3G-ON-SEMICONDUCTOR

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Verfügbarkeit
Aktie:
471
Auf Bestellung:
2454
Menge eingeben:
Der aktuelle Preis von IRFS23N20DTRLP dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
2,47 $
2,47 $
10
2,10 $
21,00 $
100
1,68 $
168,00 $
500
1,47 $
735,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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