RGPZ10BM40FHTL

RGPZ10BM40FHTL
Mfr. #:
RGPZ10BM40FHTL
Hersteller:
Rohm Semiconductor
Beschreibung:
IGBT Transistors 430V 20A 1.6V Vce Ignition IGBT
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
RGPZ10BM40FHTL Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
RGPZ10BM40FHTL Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ROHM Halbleiter
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO-252-3
Montageart:
SMD/SMT
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
460 V
Kollektor-Emitter-Sättigungsspannung:
1.6 V
Maximale Gate-Emitter-Spannung:
10 V
Kontinuierlicher Kollektorstrom bei 25 C:
20 A
Pd - Verlustleistung:
107 W
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 175 C
Serie:
RGP
Qualifikation:
AEC-Q101
Verpackung:
Spule
Kontinuierlicher Kollektorstrom Ic Max:
20 A
Marke:
ROHM Halbleiter
Gate-Emitter-Leckstrom:
15 uA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
2500
Unterkategorie:
IGBTs
Teil # Aliase:
RGPZ10BM40FH
Tags
RGP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 460V 20A 107000mW Automotive 3-Pin(2+Tab) TO-252 T/R
***et
Transistor Ignition IGBT 430V 20A 3-Pin TO-252 T/R
***
HIGH RELIABILITY
***ark
Ignition Igbt 430V 20A To-252 Aec-Q101; Dc Collector Current:20A; Collector Emitter Saturation Voltage Vce(On):1.6V; Power Dissipation Pd:107W; Collector Emitter Voltage V(Br)Ceo:460V; Transistor Case Style:to-252; No. Of Pins:3Pins;rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. IGNITION IGBT 430V 20A TO-252 AEC-Q101; DC Collector Current:20A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:107W; Collector Emitter Voltage V(br)ceo:460V; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)
***nell
IGNITION IGBT 430V 20A TO-252 AEC-Q101; Corrente di Collettore CC:20A; Tensione Saturaz Collettore-Emettitore Vce(on):1.6V; Dissipazione di Potenza Pd:107W; Tensione Collettore-Emettitore V(br)ceo:460V; Modello Case Transistor:TO-252; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:AEC-Q101; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2018)
Automotive Ignition IGBTs
ROHM Semiconductor Automotive Ignition IGBTs with low collector-emitter saturation voltage is suitable for ignition coil and solenoid driver circuits. The IGBT transistors feature high self-clamped inductive switching energy, built-in gate-emitter protection diode, and built-in gate-emitter resistance. These IGBT transistors operate at -40ºC to 175ºC temperature and -55ºC to 175ºC storage temperature. The devices are housed in a 3-pin TO-252 and TO263S packages and are a highly reliable product for automotive.
Automotive Devices
ROHM Automotive Devices contribute to the evolution of the automotive sector and next-generation vehicles with their long-term and stable supply of products. ROHM's extensive lineup of devices supports the transition towards increased computerization and connectivity. ROHM focuses on safety, comfort, and ecology while providing optimum solutions to the customers' needs.
Teil # Mfg. Beschreibung Aktie Preis
RGPZ10BM40FHTL
DISTI # RGPZ10BM40FHTLCT-ND
ROHM SemiconductorIGBT
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
4986In Stock
  • 1000:$0.8841
  • 500:$1.0671
  • 250:$1.2195
  • 100:$1.2988
  • 25:$1.5244
  • 10:$1.6160
  • 1:$1.8000
RGPZ10BM40FHTL
DISTI # RGPZ10BM40FHTLDKR-ND
ROHM SemiconductorIGBT
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
4986In Stock
  • 1000:$0.8841
  • 500:$1.0671
  • 250:$1.2195
  • 100:$1.2988
  • 25:$1.5244
  • 10:$1.6160
  • 1:$1.8000
RGPZ10BM40FHTL
DISTI # RGPZ10BM40FHTLTR-ND
ROHM SemiconductorIGBT
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
2500In Stock
  • 2500:$0.8288
RGPZ10BM40FHTL
DISTI # RGPZ10BM40FHTL
ROHM SemiconductorTransistor Ignition IGBT 430V 20A 3-Pin TO-252 T/R - Tape and Reel (Alt: RGPZ10BM40FHTL)
RoHS: Compliant
Min Qty: 2500
Container: Reel
Americas - 0
    RGPZ10BM40FHTL
    DISTI # 22AC8547
    ROHM SemiconductorIGNITION IGBT 430V 20A TO-252 AEC-Q101,DC Collector Current:20A,Collector Emitter Saturation Voltage Vce(on):1.6V,Power Dissipation Pd:107W,Collector Emitter Voltage V(br)ceo:460V,Transistor Case Style:TO-252,No. of Pins:3Pins, RoHS Compliant: Yes2500
    • 1000:$0.8680
    • 500:$1.0500
    • 250:$1.1300
    • 100:$1.2000
    • 50:$1.3000
    • 25:$1.4000
    • 10:$1.4900
    • 1:$1.7700
    RGPZ10BM40FHTL
    DISTI # 755-RGPZ10BM40FHTL
    ROHM SemiconductorIGBT Transistors 430V 20A 1.6V Vce Ignition IGBT
    RoHS: Compliant
    2440
    • 1:$1.7500
    • 10:$1.4800
    • 100:$1.1900
    • 500:$1.0400
    • 1000:$0.8590
    • 2500:$0.8000
    RGPZ10BM40FHTL
    DISTI # 2766346
    ROHM SemiconductorIGNITION IGBT 430V 20A TO-252 AEC-Q1012500
    • 500:£0.7530
    • 250:£0.8090
    • 100:£0.8640
    • 10:£1.0700
    • 1:£1.2700
    RGPZ10BM40FHTLROHM SemiconductorIGBT Transistors 430V 20A 1.6V Vce Ignition IGBT
    RoHS: Compliant
    Americas -
      RGPZ10BM40FHTL
      DISTI # 2766346
      ROHM SemiconductorIGNITION IGBT 430V 20A TO-252 AEC-Q101
      RoHS: Compliant
      2500
      • 500:$1.6100
      • 250:$1.8400
      • 100:$1.9600
      • 25:$2.3000
      • 5:$2.4400
      Bild Teil # Beschreibung
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      Schottky Diodes & Rectifiers 30V Vr 0.2A Io SBD SOT-23 0.1A
      SCT3022ALGC11

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      MOSFET N-Ch 650V SiC 93A 22mOhm TrenchMOS
      RGTV00TK65DGC11

      Mfr.#: RGTV00TK65DGC11

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      650V 50A FIELD STOP TRENCH IGBT
      RGPR10BM40FHTL

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      OMO.#: OMO-RGPR10BM40FHTL-ROHM-SEMI

      Trans IGBT Chip N-CH 460V 20A 3-Pin TO-252 T/R - Tape and Reel (Alt: RGPR10BM40FHTL)
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1985
      Menge eingeben:
      Der aktuelle Preis von RGPZ10BM40FHTL dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      1,75 $
      1,75 $
      10
      1,48 $
      14,80 $
      100
      1,19 $
      119,00 $
      500
      1,04 $
      520,00 $
      1000
      0,86 $
      859,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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