BSZ065N03LSATMA1

Mfr. #:: BSZ065N03LSATMA1
Hersteller:: Infineon Technologies
Beschreibung:: MOSFET N-Ch 30V 40A TDSON-8 OptiMOS
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: BSZ065N03LSATMA1 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:: BSZ065N03LSATMA1 Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller:: Infineon

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: TSDSON-8

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 30 V

Id - Kontinuierlicher Drainstrom:: 40 A

Rds On - Drain-Source-Widerstand:: 5.4 mOhms

Vgs th - Gate-Source-Schwellenspannung:: 1.2 V

Vgs - Gate-Source-Spannung:: 20 V

Qg - Gate-Ladung:: 13 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Pd - Verlustleistung:: 26 W

Aufbau:: Single

Kanalmodus:: Erweiterung

Handelsname:: OptiMOS

Verpackung:: Spule

Höhe:: 1.1 mm

Länge:: 3.3 mm

Transistortyp:: 1 N-Channel

Breite:: 3.3 mm

Marke:: Infineon-Technologien

Vorwärtstranskonduktanz - Min:: 34 S

Abfallzeit:: 2.4 ns

Produktart:: MOSFET

Anstiegszeit:: 3.4 ns

Werkspackungsmenge:: 5000

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 12 ns

Typische Einschaltverzögerungszeit:: 2.5 ns

Teil # Aliase:: BSZ065N03LS BSZ65N3LSXT SP000799084

Tags: BSZ065N03LS, BSZ065N03, BSZ065, BSZ06, BSZ0, BSZ

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSZ065N03LSATMA1 Beschreibung

***ure Electronics: Single N-Channel 30 V 6.5 mOhm 10 nC OptiMOS Power Mosfet - TSDSON-8

*** Source Electronics: MOSFET N-CH 30V 12A TSDSON-8 / Trans MOSFET N-CH 30V 12A 8-Pin TSDSON EP T/R

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:40A; On Resistance Rds(On):0.0054Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Product Range:-Rohs Compliant: Yes

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

BSZ065N03LSATMA1 Mehr Informationen

Wireless Charging Solutions: Infineon Wireless Charging Solutions meet today's growing demand for wireless charge applications like smartphones, wearables, notebooks, and low-voltage drive devices. Infineon's highly efficient and cost-effective devices enable state-of-the-art solutions for the transmitter unit for inductive and resonant standards. Infineon devices are ready-to-use for the adapter/charger, fostering time-to-market of full wireless charging solutions. Infineon is a member of the Wireless Power Consortium and the AirFuel Alliance.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
BSZ065N03LSATMA1 DISTI # V72:2272_06390880	Infineon Technologies AG	Trans MOSFET N-CH 30V 12A 8-Pin TSDSON EP T/R RoHS: Compliant	4900	3000:$0.3086 1000:$0.3187 500:$0.3439 250:$0.3821 100:$0.3973 25:$0.6008 10:$0.6674 1:$0.8010
BSZ065N03LSATMA1 DISTI # V36:1790_06390880	Infineon Technologies AG	Trans MOSFET N-CH 30V 12A 8-Pin TSDSON EP T/R RoHS: Compliant	0	5000000:$0.2424 2500000:$0.2426 500000:$0.2567 50000:$0.2797 5000:$0.2835
BSZ065N03LSATMA1 DISTI # BSZ065N03LSATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 30V 12A TSDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	23886In Stock	1000:$0.3461 500:$0.4326 100:$0.5472 10:$0.7140 1:$0.8100
BSZ065N03LSATMA1 DISTI # BSZ065N03LSATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 30V 12A TSDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	23886In Stock	1000:$0.3461 500:$0.4326 100:$0.5472 10:$0.7140 1:$0.8100
BSZ065N03LSATMA1 DISTI # BSZ065N03LSATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 30V 12A TSDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	15000In Stock	25000:$0.2660 10000:$0.2730 5000:$0.2835
BSZ065N03LSATMA1 DISTI # 33156665	Infineon Technologies AG	Trans MOSFET N-CH 30V 12A 8-Pin TSDSON EP T/R RoHS: Compliant	4900	32:$0.8010
BSZ065N03LSATMA1 DISTI # BSZ065N03LSATMA1	Infineon Technologies AG	Trans MOSFET N-CH 30V 12A 8-Pin TSDSON T/R - Tape and Reel (Alt: BSZ065N03LSATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	50000:$0.2029 30000:$0.2059 20000:$0.2139 10000:$0.2219 5000:$0.2299
BSZ065N03LSATMA1 DISTI # SP000799084	Infineon Technologies AG	Trans MOSFET N-CH 30V 12A 8-Pin TSDSON T/R (Alt: SP000799084) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel	Europe - 0	50000:€0.1889 30000:€0.2039 20000:€0.2209 10000:€0.2409 5000:€0.2939
BSZ065N03LSATMA1. DISTI # 29AC2880	Infineon Technologies AG	Transistor Polarity:N Channel,Continuous Drain Current Id:40A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0054ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:26W,No. of Pins:8Pins RoHS Compliant: Yes	0	50000:$0.2030 30000:$0.2060 20000:$0.2140 10000:$0.2220 1:$0.2300
BSZ065N03LS DISTI # 726-BSZ065N03LS	Infineon Technologies AG	MOSFET N-Ch 30V 40A TDSON-8 OptiMOS RoHS: Compliant	7098	1:$0.7400 10:$0.6200 100:$0.4000 1000:$0.3200 5000:$0.2710
BSZ065N03LSATMA1 DISTI # 726-BSZ065N03LSATMA1	Infineon Technologies AG	MOSFET N-Ch 30V 40A TDSON-8 OptiMOS RoHS: Compliant	4700	1:$0.7400 10:$0.6200 100:$0.4000 1000:$0.3200 5000:$0.2710 10000:$0.2610 25000:$0.2500
BSZ065N03LSATMA1 DISTI # 9064331P	Infineon Technologies AG	MOSFET N-CHANNEL 30V 12A OPTIMOS TSDSON8, RL	5360	2500:£0.2300 1000:£0.2400 500:£0.2700 100:£0.3000
BSZ065N03LSATMA1 DISTI # 2480783	Infineon Technologies AG	MOSFET, N-CH, 30V, 40A, TSDSON-8 RoHS: Compliant	0	5000:$0.4170 1000:$0.4920 100:$0.6160 10:$0.9530 1:$1.1500
BSZ065N03LSATMA1 DISTI # 2480783RL	Infineon Technologies AG	MOSFET, N-CH, 30V, 40A, TSDSON-8 RoHS: Compliant	0	5000:$0.4170 1000:$0.4920 100:$0.6160 10:$0.9530 1:$1.1500

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Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1987
Menge eingeben:

Der aktuelle Preis von BSZ065N03LSATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,74 $~~; ~~0,74 $~~

10: ~~0,62 $~~; ~~6,20 $~~

100: ~~0,40 $~~; ~~40,00 $~~

1000: ~~0,32 $~~; ~~320,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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BSZ065N03LSATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes