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A3T21H360W23SR6

A3T21H360W23SR6
Mfr. #:
A3T21H360W23SR6
Hersteller:
NXP Semiconductors
Beschreibung:
RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2110-2200 MHz, 56 W Avg., 28 V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
A3T21H360W23SR6 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
A3T21H360W23SR6 Mehr Informationen A3T21H360W23SR6 Product Details
Produkteigenschaft
Attributwert
Hersteller:
NXP
Produktkategorie:
HF-MOSFET-Transistoren
RoHS:
Y
Polarität des Transistors:
Dualer N-Kanal
Technologie:
Si
Id - Kontinuierlicher Drainstrom:
2.4 A
Vds - Drain-Source-Durchbruchspannung:
- 500 mV, 65 V
Gewinnen:
16.4 dB
Ausgangsleistung:
56 W
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 150 C
Montageart:
SMD/SMT
Paket / Koffer:
ACP-1230S-4L2S
Verpackung:
Spule
Arbeitsfrequenz:
2110 MHz to 2200 MHz
Typ:
HF-Leistungs-MOSFET
Marke:
NXP Semiconductors
Anzahl der Kanäle:
2 Channel
Produktart:
HF-MOSFET-Transistoren
Werkspackungsmenge:
150
Unterkategorie:
MOSFETs
Vgs - Gate-Source-Spannung:
- 6 V, 10 V
Vgs th - Gate-Source-Schwellenspannung:
1.4 V
Teil # Aliase:
935354511128
Gewichtseinheit:
0.212656 oz
Tags
A3T21, A3T2, A3T
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Airfast® Third-Generation Power Amplifiers
NXP Semiconductors Airfast® Third-Generation Power Amplifiers provide the best in class performance for the critical parameters that include efficiency, gain, RF power, and signal bandwidth. The Airfast third-generation technology reduces the footprint required to deliver specific RF output power. These amplifiers include 28V and 48V LDMOS transistors. The Airfast third-generation amplifiers are designed for the asymmetrical Doherty amplifier architectures. These amplifiers feature high efficiency, reduced solution size, thermal performance, and operate at wideband frequency. The Airfast third-generation amplifiers support all global cellular standards including LTE and NR for 5G. These amplifiers reduce both the size of cellular base stations and the installation costs.
Teil # Mfg. Beschreibung Aktie Preis
A3T21H360W23SR6
DISTI # V36:1790_18998405		NXP SemiconductorsRF POWER TRANSISTOR0
  • 150000:$86.5700
  • 75000:$86.5800
  • 15000:$89.1500
  • 1500:$95.5300
  • 150:$96.7200
A3T21H360W23SR6
DISTI # A3T21H360W23SR6-ND		NXP SemiconductorsAIRFAST RF POWER LDMOS TRANSISTO
RoHS: Compliant
Min Qty: 150
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 150:$96.7176
A3T21H360W23SR6
DISTI # A3T21H360W23SR6		Avnet, Inc.RF Power Lateral MOSFET N-Channel Enhancement Mode LDMOS Transistor 28 V 600 mA 56 W 4-Pin ACP-1230S T/R - Tape and Reel (Alt: A3T21H360W23SR6)
RoHS: Compliant
Min Qty: 150
Container: Reel		Americas - 0
  • 1500:$92.4900
  • 900:$94.2900
  • 600:$97.7900
  • 300:$101.7900
  • 150:$105.9900
A3T21H360W23SR6
DISTI # 771-A3T21H360W23SR6		NXP SemiconductorsRF MOSFET Transistors A3T21H360W23S/CFM6F///REEL 13 Q2 NDP
RoHS: Compliant		0
  • 1:$116.3600
  • 5:$114.2200
  • 10:$109.0800
  • 25:$105.4400
  • 100:$98.1800
  • 150:$89.9700
A3T21H360W23SR6
DISTI # A3T21H360W23SR6		NXP SemiconductorsRF POWER TRANSISTOR
RoHS: Compliant		0
  • 150:$109.0800
Bild Teil # Beschreibung
A3T21H360W23SR6

Mfr.#: A3T21H360W23SR6

OMO.#: OMO-A3T21H360W23SR6

 RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2110-2200 MHz, 56 W Avg., 28 V
A3T21H360W23S

Mfr.#: A3T21H360W23S

OMO.#: OMO-A3T21H360W23S-1190

 Neu und Original
A3T21H360W23SR6

Mfr.#: A3T21H360W23SR6

OMO.#: OMO-A3T21H360W23SR6-NXP-SEMICONDUCTORS

 AIRFAST RF POWER LDMOS TRANSISTO
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
3500
Menge eingeben:
Der aktuelle Preis von A3T21H360W23SR6 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
116,36 $
116,36 $
5
114,22 $
571,10 $
10
109,08 $
1 090,80 $
25
105,44 $
2 636,00 $
100
98,18 $
9 818,00 $
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