IRF250P224

IRF250P224
Mfr. #:
IRF250P224
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET IFX OPTIMOS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF250P224 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IRF250P224 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-247AC-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
250 V
Id - Kontinuierlicher Drainstrom:
96 A
Rds On - Drain-Source-Widerstand:
12 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
203 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
313 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
StarkIRFET
Verpackung:
Rohr
Transistortyp:
1 N-Channel
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
112 S
Abfallzeit:
58 ns
Produktart:
MOSFET
Anstiegszeit:
70 ns
Werkspackungsmenge:
400
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
77 ns
Typische Einschaltverzögerungszeit:
25 ns
Teil # Aliase:
SP001582438
Gewichtseinheit:
0.211644 oz
Tags
IRF250, IRF25, IRF2, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 250 V 12 mOhm 135 nC StrongIRFET™ IR Mosfet - TO-247AC
***ical
Trans MOSFET N-CH 250V 128A 3-Pin(3+Tab) TO-247AC Tube
***et Europe
Trans MOSFET N-CH 250V 96A 3TO-247AC
***i-Key
MOSFET N-CH 250V 96A TO247AC
***ark
Mosfet, N-Ch, 250V, 128A, 556W, To-247Ac; Transistor Polarity:n Channel; Continuous Drain Current Id:128A; Drain Source Voltage Vds:250V; On Resistance Rds(On):0.009Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes
***ineon
Target Applications: UPS and Inverter applications Half-bridge and full-bridge topologies Resonant mode power supplies DC/DC and AC/DC converters OR-ing and redundant power switches Brushed and BLDC Motor drive applications Battery powered circuits
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 250V, 128A, 556W, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:128A; Drain Source Voltage Vds:250V; On Resistance Rds(on):0.009ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:556W; Transistor Case Style:TO-247AC; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:StrongIRFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET CAN N, 250V, 128A, 556W, TO-247AC; Polarità Transistor:Canale N; Corrente Continua di Drain Id:128A; Tensione Drain Source Vds:250V; Resistenza di Attivazione Rds(on):0.009ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:556W; Modello Case Transistor:TO-247AC; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:StrongIRFET Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
StrongIRFET™ Power MOSFETs
Infineon StrongIRFET™ Power MOSFET family are optimized for low RDS(on) and high current capability. These devices are ideal for low-frequency applications requiring performance and ruggedness. These MOSFETs have the highest current carrying capability in the industry. This feature leads to increased robustness and reliability for high power density applications which require high efficiency and reliability. 
Teil # Mfg. Beschreibung Aktie Preis
IRF250P224
DISTI # V99:2348_17072165
Infineon Technologies AGIR MOSFET - StrongIRFET¿212
  • 250:$9.4070
  • 100:$9.9060
  • 25:$11.0840
  • 10:$11.5920
  • 1:$12.5200
IRF250P224
DISTI # IRF250P224-ND
Infineon Technologies AGMOSFET N-CH 250V 96A TO247AC
RoHS: Compliant
Min Qty: 1
Container: Tube
368In Stock
  • 400:$11.6359
  • 10:$15.0140
  • 1:$16.5200
IRF250P224
DISTI # 29721879
Infineon Technologies AGIR MOSFET - StrongIRFET¿212
  • 100:$9.9060
  • 25:$11.0840
  • 10:$11.5920
  • 1:$12.5200
IRF250P224
DISTI # 26393585
Infineon Technologies AGIR MOSFET - StrongIRFET¿44
  • 250:$10.1568
  • 100:$10.6848
  • 25:$12.1248
  • 10:$12.6528
  • 2:$13.7568
IRF250P224
DISTI # 30611032
Infineon Technologies AGIR MOSFET - StrongIRFET¿10
  • 10:$13.0050
  • 5:$13.8975
  • 2:$16.7025
IRF250P224
DISTI # IRF250P224
Infineon Technologies AGTrans MOSFET N-CH 250V 96A 3TO-247AC (Alt: IRF250P224)
RoHS: Compliant
Min Qty: 400
Asia - 0
    IRF250P224
    DISTI # IRF250P224
    Infineon Technologies AGTrans MOSFET N-CH 250V 96A 3TO-247AC - Rail/Tube (Alt: IRF250P224)
    RoHS: Compliant
    Min Qty: 400
    Container: Tube
    Americas - 0
    • 400:$7.7900
    • 800:$7.4900
    • 1600:$7.2900
    • 2400:$6.9900
    • 4000:$6.8900
    IRF250P224
    DISTI # 726-IRF250P224
    Infineon Technologies AGMOSFET IFX OPTIMOS
    RoHS: Compliant
    484
    • 1:$14.3300
    • 10:$13.1800
    • 25:$12.6300
    • 100:$11.1300
    • 250:$10.5800
    IRF250P224
    DISTI # IRF250P224
    Infineon Technologies AGTransistor: N-MOSFET,unipolar,250V,68A,313W,TO247AC5
    • 1:$15.2700
    • 3:$13.7700
    • 10:$12.1700
    • 25:$10.9400
    IRF250P224
    DISTI # C1S322000671490
    Infineon Technologies AGIR MOSFET - StrongIRFET10
    • 10:$10.2000
    • 5:$10.9000
    • 1:$13.1000
    Bild Teil # Beschreibung
    IR2110PBF

    Mfr.#: IR2110PBF

    OMO.#: OMO-IR2110PBF

    Gate Drivers Hi&Lw Sd Drvr All HiVlt Pins 1 Sd
    SMAJ33A-Q

    Mfr.#: SMAJ33A-Q

    OMO.#: OMO-SMAJ33A-Q

    TVS Diodes / ESD Suppressors 33volts 400W 5% Uni-Dir. AEC-Q101
    LTM8055EY-1#PBF

    Mfr.#: LTM8055EY-1#PBF

    OMO.#: OMO-LTM8055EY-1-PBF

    Switching Voltage Regulators 36VIN, 8.5A Buck-Boost Module Reg
    10144518-041802LF

    Mfr.#: 10144518-041802LF

    OMO.#: OMO-10144518-041802LF

    Board to Board & Mezzanine Connectors Plug, P1, 40Pos
    10144518-044802LF

    Mfr.#: 10144518-044802LF

    OMO.#: OMO-10144518-044802LF

    Board to Board & Mezzanine Connectors Plug, P4, 40Pos
    SF-1206FP300-2

    Mfr.#: SF-1206FP300-2

    OMO.#: OMO-SF-1206FP300-2

    Surface Mount Fuses 3A Fast Acting 1206 Singlfuse
    IR2110PBF

    Mfr.#: IR2110PBF

    OMO.#: OMO-IR2110PBF-INFINEON-TECHNOLOGIES

    Gate Drivers Hi&Lw Sd Drvr All HiVlt Pins 1 Sd
    10144517-043802LF

    Mfr.#: 10144517-043802LF

    OMO.#: OMO-10144517-043802LF-AMPHENOL-ICC

    CONN, STACKING, RCPT, 40POS, 2ROW, 0.8MM
    CRCW06038K25FKEAC

    Mfr.#: CRCW06038K25FKEAC

    OMO.#: OMO-CRCW06038K25FKEAC-VISHAY-DALE

    D11/CRCW0603-C 100 8K25 1% ET1
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    2000
    Menge eingeben:
    Der aktuelle Preis von IRF250P224 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    8,62 $
    8,62 $
    10
    7,79 $
    77,90 $
    25
    7,43 $
    185,75 $
    100
    6,45 $
    645,00 $
    250
    6,16 $
    1 540,00 $
    500
    5,61 $
    2 805,00 $
    1000
    5,18 $
    5 180,00 $
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