SIR788DP-T1-GE3

SIR788DP-T1-GE3
Mfr. #:
SIR788DP-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 30V Vds 20V Vgs PowerPAK SO-8
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIR788DP-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIR788DP-T1-GE3 DatasheetSIR788DP-T1-GE3 Datasheet (P4-P6)SIR788DP-T1-GE3 Datasheet (P7-P9)SIR788DP-T1-GE3 Datasheet (P10-P12)SIR788DP-T1-GE3 Datasheet (P13)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
E
Technologie:
Si
Handelsname:
TrenchFET, PowerPAK
Verpackung:
Spule
Serie:
HERR
Marke:
Vishay / Siliconix
Produktart:
MOSFET
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Teil # Aliase:
SIR788DP-GE3
Gewichtseinheit:
0.017870 oz
Tags
SIR78, SIR7, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 30V 28.6A 8-Pin PowerPAK SO T/R
*** Americas
VISHAY.POWERPAK SO-8.REEL.SPQ 3000.MOQ 3000/MPQ 3000.MOSFET
***nell
MOSFET, N-CH, 30V, PPAK-SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0027ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:48W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
Teil # Mfg. Beschreibung Aktie Preis
SIR788DP-T1-GE3
DISTI # SIR788DP-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CH 30V 60A PPAK SO-8
Min Qty: 3000
Container: Tape & Reel (TR)
Limited Supply - Call
    SIR788DP-T1-GE3
    DISTI # SIR788DP-T1-GE3CT-ND
    Vishay SiliconixMOSFET N-CH 30V 60A PPAK SO-8
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      SIR788DP-T1-GE3
      DISTI # SIR788DP-T1-GE3DKR-ND
      Vishay SiliconixMOSFET N-CH 30V 60A PPAK SO-8
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        SIR788DP-T1-GE3
        DISTI # 7879349
        Vishay IntertechnologiesIn a Pack of 5, SIR788DP-T1-GE3 N-Channel MOSFET, 60 A, 30 V SkyFET, 8-Pin PowerPAK SO Vishay, PK
        Min Qty: 5
        Container: Package
        0
        • 5:$0.4550
        SIR788DP-T1-GE3
        DISTI # 1657070
        Vishay IntertechnologiesOn a Reel of 3000, SIR788DP-T1-GE3 N-Channel MOSFET, 60 A, 30 V SkyFET, 8-Pin PowerPAK SO Vishay, RL
        Min Qty: 3000
        Container: Reel
        0
        • 3000:$0.4470
        SIR788DP-T1-GE3Vishay Intertechnologies 2539
          SIR788DP-T1-GE3
          DISTI # 2283678
          Vishay IntertechnologiesMOSFET, N-CH, 30V, PPAK-SO8
          RoHS: Compliant
          0
          • 5000:£0.4100
          • 1000:£0.4680
          • 500:£0.5240
          • 250:£0.5670
          • 100:£0.6090
          • 10:£0.8530
          • 1:£1.1000
          SIR788DPT1GE3Vishay IntertechnologiesPower Field-Effect Transistor, 60A I(D), 30V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
          RoHS: Compliant
          Europe - 3000
            Bild Teil # Beschreibung
            SIR788DP-T1-GE3

            Mfr.#: SIR788DP-T1-GE3

            OMO.#: OMO-SIR788DP-T1-GE3

            MOSFET 30V Vds 20V Vgs PowerPAK SO-8
            SIR788DP-T1-E3

            Mfr.#: SIR788DP-T1-E3

            OMO.#: OMO-SIR788DP-T1-E3-1190

            Neu und Original
            SIR788DP-T1-GE3

            Mfr.#: SIR788DP-T1-GE3

            OMO.#: OMO-SIR788DP-T1-GE3-VISHAY

            MOSFET N-CH 30V 60A PPAK SO-8
            SIR788DPT1GE3

            Mfr.#: SIR788DPT1GE3

            OMO.#: OMO-SIR788DPT1GE3-1190

            Power Field-Effect Transistor, 60A I(D), 30V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
            Verfügbarkeit
            Aktie:
            Available
            Auf Bestellung:
            1500
            Menge eingeben:
            Der aktuelle Preis von SIR788DP-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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