IS43R86400D-6BLI

IS43R86400D-6BLI
Mfr. #:
IS43R86400D-6BLI
Hersteller:
ISSI
Beschreibung:
DRAM 512M (64Mx8) 166MHz 2.5v DDR SDRAM
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IS43R86400D-6BLI Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IS43R86400D-6BLI Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
ISSI, Integrated Silicon Solution Inc
Produktkategorie
Erinnerung
Serie
IS43R86400D
Typ
DDR1
Verpackung
Tray Alternative Verpackung
Montageart
SMD/SMT
Paket-Koffer
FBGA-60
Betriebstemperatur
-40°C ~ 85°C (TA)
Schnittstelle
Parallel
Spannungsversorgung
2.3 V ~ 2.7 V
Lieferanten-Geräte-Paket
60-TFBGA (8x13)
Speichergröße
512M (64M x 8)
Speichertyp
DDR-SDRAM
Geschwindigkeit
166MHz
Zugriffszeit
6 ns
Format-Speicher
RAM
Maximale-Betriebstemperatur
+ 85 C
Mindest-Betriebstemperatur
- 40 C
Organisation
64 M x 8
Versorgungsstrom-Max
370 mA
Daten-Bus-Breite
8 bit
Versorgungsspannung-Max
2.7 V
Versorgungsspannung-Min
2.3 V
Maximale-Takt-Frequenz
166 MHz
Tags
IS43R86400D-6BLI, IS43R86400D-6B, IS43R86400D-6, IS43R86400D, IS43R86400, IS43R86, IS43R8, IS43R, IS43, IS4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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    RU

    I didn't get this order.

    2019-08-21
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    RU

    Come, born

    2019-05-28
***et
DRAM Chip DDR SDRAM 512Mbit 64M X 8 2.5V 60-Pin TFBGA Tray
***ark
512M, 2.5V, Ddr, 64Mx8, 166Mhz, 60 Ball Bga (8Mmx13Mm) Rohs, It
***I SCT
DDR SDRAM, 64Mx8, 2.5V, 8K, BGA-60,RoHS
***i-Key
IC DRAM 512MBIT PARALLEL 60TFBGA
DDR SDRAM
ISSI's 512-Mbit DDR SDRAM achieves high speed data transfer using pipeline architecture and two data word accesses per clock cycle. The 536,870,912-bit memory array is internally organized as four banks of 128Mb to allow concurrent operations. The pipeline allows Read and Write burst accesses to be virtually continuous, with the option to concatenate or truncate the bursts. The programmable features of burst length, burst sequence and CAS latency enable further advantages. The device is available in 8-bit, 16-bit and 32-bit data word size Input data is registered on the I/O pins on both edges of Data Strobe signal(s), while output data is referenced to both edges of Data Strobe and both edges of CLK. Commands are registered on the positive edges of CLK.Learn More
IS43R32800D 8Mx32 256-Mbit DDR SDRAM
ISSI IS43R32800D 8Mx32 256-Mbit DDR SDRAM achieves high speed data transfer using pipeline architecture and two data word accesses per clock cycle. The 268,435,456-bit memory array is internally organized as four banks of 64Mb to allow concurrent operations. The pipeline allows Read and Write burst accesses to be virtually continuous, with the option to concatenate or truncate the bursts. The programmable features of burst length, burst sequence and CAS latency enable further advantages.
IS43R86400D 512Mb DDR SDRAM
ISSI IS43R86400D 512Mb DDR SDRAM achieves high speed data transfer using pipeline architecture and two data word accesses per clock cycle. The 536,870,912-bit memory array is internally organized as four banks of 128Mb to allow concurrent operations. The pipeline allows Read and Write burst accesses to be virtually continuous, with the option to concatenate or truncate the bursts. ISSI IS43R86400D 512Mb DDR SDRAM features programmable burst length, burst sequence, and CAS latency, enabling further advantages.
Teil # Mfg. Beschreibung Aktie Preis
IS43R86400D-6BLI
DISTI # 26639796
Integrated Silicon Solution IncDRAM Chip DDR SDRAM 512Mbit 64Mx8 2.5V 60-Pin TFBGA
RoHS: Compliant
190
  • 190:$8.5730
IS43R86400D-6BLI
DISTI # IS43R86400D-6BLI-ND
Integrated Silicon Solution IncIC DRAM 512M PARALLEL 60TFBGA
RoHS: Compliant
Min Qty: 190
Container: Tray
Temporarily Out of Stock
  • 190:$8.5734
IS43R86400D-6BLI-TR
DISTI # IS43R86400D-6BLI-TR-ND
Integrated Silicon Solution IncIC DRAM 512M PARALLEL 60TFBGA
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 2500:$7.5792
IS43R86400D-6BLI
DISTI # IS43R86400D-6BLI
Integrated Silicon Solution IncDRAM Chip DDR SDRAM 512M-Bit 64M x 8 2.5V 60-Pin TFBGA - Bulk (Alt: IS43R86400D-6BLI)
RoHS: Compliant
Min Qty: 190
Container: Bulk
Americas - 0
  • 190:$8.2900
  • 380:$7.9900
  • 760:$7.5900
  • 1140:$7.3900
  • 1900:$7.0900
IS43R86400D-6BLI
DISTI # IS43R86400D-6BLI
Integrated Silicon Solution IncDRAM Chip DDR SDRAM 512Mbit 64M X 8 2.5V 60-Pin TFBGA Tray (Alt: IS43R86400D-6BLI)
RoHS: Compliant
Min Qty: 1
Container: Tray
Europe - 0
  • 1:€9.1900
  • 10:€8.4900
  • 25:€8.0900
  • 50:€7.7900
  • 100:€7.4900
  • 500:€7.1900
  • 1000:€6.7900
IS43R86400D-6BLI-TR
DISTI # IS43R86400D-6BLI-TR
Integrated Silicon Solution IncDRAM Chip DDR SDRAM 512M-Bit 64M x 8 2.5V 60-Pin TFBGA T/R - Tape and Reel (Alt: IS43R86400D-6BLI-TR)
RoHS: Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 2500:$8.3900
  • 5000:$8.0900
  • 10000:$7.7900
  • 15000:$7.4900
  • 25000:$7.1900
IS43R86400D-6BLI
DISTI # 870-IS43R86400D-6BLI
Integrated Silicon Solution IncDRAM 512M (64Mx8) 166MHz 2.5v DDR SDRAM
RoHS: Compliant
180
  • 1:$10.8200
  • 10:$10.0100
  • 25:$9.7900
  • 50:$9.7300
  • 100:$8.5700
  • 250:$8.1500
  • 500:$8.0600
  • 1000:$7.7900
IS43R86400D-6BLI-TR
DISTI # 870-43R86400D6BLITR
Integrated Silicon Solution IncDRAM 512M (64Mx8) 166MHz DDR 2.5v
RoHS: Compliant
0
  • 2500:$7.2700
Bild Teil # Beschreibung
IS43R86400D-5BLI

Mfr.#: IS43R86400D-5BLI

OMO.#: OMO-IS43R86400D-5BLI

DRAM 512M (64Mx8) 200MHz 2.5v DDR SDRAM
IS43R86400E-6BLI

Mfr.#: IS43R86400E-6BLI

OMO.#: OMO-IS43R86400E-6BLI

DRAM DDR,512M,2.5V,RoHs 166MHz,64Mx8, IT
IS43R86400E-6BLI-TR

Mfr.#: IS43R86400E-6BLI-TR

OMO.#: OMO-IS43R86400E-6BLI-TR

DRAM DDR,512M,2.5V,RoHs 166MHz,64Mx8, IT
IS43R86400E-5BLI

Mfr.#: IS43R86400E-5BLI

OMO.#: OMO-IS43R86400E-5BLI-INTEGRATED-SILICON-SOLUTION

DRAM DDR,512M,2.5V,RoHs 200MHz,64Mx8,IT
IS43R86400F-6TL-TR

Mfr.#: IS43R86400F-6TL-TR

OMO.#: OMO-IS43R86400F-6TL-TR-230

DRAM 512M 64Mx8 166MHz DDR 2.5V
IS43R86400F-6TL

Mfr.#: IS43R86400F-6TL

OMO.#: OMO-IS43R86400F-6TL-230

DRAM 512M 64Mx8 166MHz DDR 2.5V
IS43R86400E-5TL-TR

Mfr.#: IS43R86400E-5TL-TR

OMO.#: OMO-IS43R86400E-5TL-TR-230

DRAM DDR,512M,2.5V,RoHs 200MHz,64Mx8
IS43R86400D-6TL-TR

Mfr.#: IS43R86400D-6TL-TR

OMO.#: OMO-IS43R86400D-6TL-TR-INTEGRATED-SILICON-SOLUTION

DRAM 512M (64Mx8) 166MHz DDR 2.5v
IS43R86400D-6BL

Mfr.#: IS43R86400D-6BL

OMO.#: OMO-IS43R86400D-6BL-INTEGRATED-SILICON-SOLUTION

DRAM 512M (64Mx8) 166MHz 2.5v DDR SDRAM
IS43R86400D-6TLI

Mfr.#: IS43R86400D-6TLI

OMO.#: OMO-IS43R86400D-6TLI-INTEGRATED-SILICON-SOLUTION

DRAM 512M (64Mx8) 166MHz 2.5v DDR SDRAM
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
5500
Menge eingeben:
Der aktuelle Preis von IS43R86400D-6BLI dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
10,64 $
10,64 $
10
10,10 $
101,03 $
100
9,57 $
957,15 $
500
9,04 $
4 519,90 $
1000
8,51 $
8 508,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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