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IRFSL7530PBF

IRFSL7530PBF
Mfr. #:
IRFSL7530PBF
Hersteller:
Infineon / IR
Beschreibung:
MOSFET 60V Single N-Channel HEXFET Power
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRFSL7530PBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IRFSL7530PBF Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-262-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
60 V
Id - Kontinuierlicher Drainstrom:
195 A
Rds On - Drain-Source-Widerstand:
2 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3.7 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
411 nC
Pd - Verlustleistung:
375 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
StarkIRFET
Verpackung:
Rohr
Höhe:
9.45 mm
Länge:
10.2 mm
Transistortyp:
1 N-Channel
Breite:
4.5 mm
Marke:
Infineon / IR
Vorwärtstranskonduktanz - Min:
242 S
Abfallzeit:
104 ns
Produktart:
MOSFET
Anstiegszeit:
141 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
172 ns
Typische Einschaltverzögerungszeit:
52 ns
Teil # Aliase:
SP001565198
Gewichtseinheit:
0.073511 oz
Tags
IRFSL753, IRFSL75, IRFSL7, IRFSL, IRFS, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
TUBE / MOSFET,60V, 195A, 2.0mOhm, 274 nC, D2PAK
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
***ow.cn
Trans MOSFET N-CH Si 60V 295A 3-Pin(3+Tab) TO-262 Tube
***
N-Channel 6 V 195A (Tc) 375W (Tc) Surface Mount TO-262
***ark
TUBE / MOSFET, 60V,195A, 2.4mOhm, 186nC, D2PAK
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
***ment14 APAC
MOSFET, N CHANNEL, 60V, 195A, TO-262-3; Transistor Polarity:N Channel; Continuous Drain Current Id:195A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.002ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.7V; MSL:-
StrongIRFET™ Power MOSFETs
Infineon StrongIRFET™ Power MOSFET family are optimized for low RDS(on) and high current capability. These devices are ideal for low-frequency applications requiring performance and ruggedness. These MOSFETs have the highest current carrying capability in the industry. This feature leads to increased robustness and reliability for high power density applications which require high efficiency and reliability. 
Teil # Mfg. Beschreibung Aktie Preis
IRFSL7530PBF
DISTI # 31044746		Infineon Technologies AGTrans MOSFET N-CH Si 60V 295A 3-Pin(3+Tab) TO-262 Tube1000
  • 1000:$1.6045
IRFSL7530PBF
DISTI # IRFSL7530PBF-ND		Infineon Technologies AGMOSFET N-CH 60V 195A D2PAK
RoHS: Compliant
Min Qty: 1000
Container: Tube		Temporarily Out of Stock
  • 1000:$1.8056
IRFSL7530PBF
DISTI # C1S322000587474		Infineon Technologies AGMOSFETs1000
  • 1000:$1.6100
IRFSL7530PBF
DISTI # IRFSL7530PBF		Infineon Technologies AGTrans MOSFET N-CH 60V 295A 3-Pin TO-262 Tube - Rail/Tube (Alt: IRFSL7530PBF)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 1000:$1.6900
  • 2000:$1.6900
  • 4000:$1.6900
  • 6000:$1.6900
  • 10000:$1.6900
IRFSL7530PBF
DISTI # 942-IRFSL7530PBF		Infineon Technologies AGMOSFET 60V Single N-Channel HEXFET Power
RoHS: Compliant		0
  • 1:$3.1100
  • 10:$2.6400
  • 100:$2.2900
  • 250:$2.1700
  • 500:$1.9500
  • 1000:$1.6500
IRFSL7530PBF
DISTI # 2424276		Infineon Technologies AGMOSFET, N CHANNEL, 60V, 195A, TO-262-3
RoHS: Compliant		0
  • 1:$4.9300
  • 10:$4.1800
  • 100:$3.6300
  • 250:$3.4400
  • 500:$3.0900
  • 1000:$2.8300
Bild Teil # Beschreibung
IRFSL7534PBF

Mfr.#: IRFSL7534PBF

OMO.#: OMO-IRFSL7534PBF

 MOSFET 60V Single N-Channel HEXFET Power
IRFSL7430PBF

Mfr.#: IRFSL7430PBF

OMO.#: OMO-IRFSL7430PBF

 MOSFET HEXFET Power MOSFET 40V Single N-Channel
IRFSL7437PBF

Mfr.#: IRFSL7437PBF

OMO.#: OMO-IRFSL7437PBF

 MOSFET 40V, 195A, 1.8 mOhm 150 nC Qg, TO-262
IRFSL7434PBF

Mfr.#: IRFSL7434PBF

OMO.#: OMO-IRFSL7434PBF

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IRFSL7440PBF

Mfr.#: IRFSL7440PBF

OMO.#: OMO-IRFSL7440PBF

 MOSFET 40V, 120A, 2.5 mOhm 90 nC Qg, TO-262
IRFSL7530PBF

Mfr.#: IRFSL7530PBF

OMO.#: OMO-IRFSL7530PBF-INFINEON-TECHNOLOGIES

 MOSFET N-CH 60V 195A D2PAK
IRFSL7534PBF

Mfr.#: IRFSL7534PBF

OMO.#: OMO-IRFSL7534PBF-INFINEON-TECHNOLOGIES

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IRFSL7762PBF

Mfr.#: IRFSL7762PBF

OMO.#: OMO-IRFSL7762PBF-INFINEON-TECHNOLOGIES

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IRFSL7540PBF

Mfr.#: IRFSL7540PBF

OMO.#: OMO-IRFSL7540PBF-INFINEON-TECHNOLOGIES

 Darlington Transistors MOSFET 60V Single N-Channel HEXFET Powe
IRFSL7730PBF

Mfr.#: IRFSL7730PBF

OMO.#: OMO-IRFSL7730PBF-INFINEON-TECHNOLOGIES

 MOSFET N-CH 75V 195A TO262
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1984
Menge eingeben:
Der aktuelle Preis von IRFSL7530PBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
3,10 $
3,10 $
10
2,63 $
26,30 $
100
2,28 $
228,00 $
250
2,17 $
542,50 $
500
1,94 $
970,00 $
1000
1,64 $
1 640,00 $
2000
1,56 $
3 120,00 $
5000
1,50 $
7 500,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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