FP150R07N3E4BOSA1

FP150R07N3E4BOSA1
Mfr. #:
FP150R07N3E4BOSA1
Hersteller:
Infineon Technologies
Beschreibung:
IGBT MODULE VCES 650V 150A
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FP150R07N3E4BOSA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
FP150R07, FP150R0, FP150R, FP150, FP15, FP1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Stop Electro
Insulated Gate Bipolar Transistor, 650V V(BR)CES, N-Channel
***ineon SCT
EconoPIM™ 3 650V three phase PIM IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled Diode and NTC, AG-ECONO3-3, RoHS
***ineon
EconoPIM 3 650V three phase PIM IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled Diode and NTC | Summary of Features: Increased blocking voltage capability to 650V; High Short Circuit Capability, Self Limiting Short Circuit Current; T(vj op) = 150C; V(CEsat) with positive Temperature Coefficient; Integrated NTC temperature sensor; Copper Base Plate; Solder Contact Technology; Standard Housing | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility | Target Applications: drives; induction; aircon
Teil # Mfg. Beschreibung Aktie Preis
FP150R07N3E4BOSA1
DISTI # FP150R07N3E4BOSA1-ND
Infineon Technologies AGIGBT MODULE VCES 650V 150A
RoHS: Not compliant
Min Qty: 10
Container: Bulk
Temporarily Out of Stock
  • 10:$138.7360
FP150R07N3E4BOSA1
DISTI # FP150R07N3E4BOSA1
Infineon Technologies AGLOW POWER ECONO - Trays (Alt: FP150R07N3E4BOSA1)
RoHS: Compliant
Min Qty: 10
Container: Tray
Americas - 0
  • 100:$122.8900
  • 60:$125.8900
  • 40:$129.0900
  • 20:$132.3900
  • 10:$134.1900
FP150R07N3E4
DISTI # 641-FP150R07N3E4
Infineon Technologies AGIGBT Modules IGBT Module 150A 650V
RoHS: Compliant
11
  • 1:$147.9000
  • 5:$144.3500
  • 10:$140.7600
  • 25:$138.7900
Bild Teil # Beschreibung
FP150R07N3E4

Mfr.#: FP150R07N3E4

OMO.#: OMO-FP150R07N3E4

IGBT Modules IGBT Module 150A 650V
FP150R07N3E4_B11

Mfr.#: FP150R07N3E4_B11

OMO.#: OMO-FP150R07N3E4-B11

IGBT Modules IGBT Module 150A 650V
FP150R07N3E4

Mfr.#: FP150R07N3E4

OMO.#: OMO-FP150R07N3E4-1190

Insulated Gate Bipolar Transistor, 650V V(BR)CES, N-Channel
FP150R07N3E4-B11

Mfr.#: FP150R07N3E4-B11

OMO.#: OMO-FP150R07N3E4-B11-1190

Neu und Original
FP150R07N3E4B11BOSA1

Mfr.#: FP150R07N3E4B11BOSA1

OMO.#: OMO-FP150R07N3E4B11BOSA1-INFINEON-TECHNOLOGIES

IGBT MODULE VCES 650V 150A
FP150R07N3E4BOSA1

Mfr.#: FP150R07N3E4BOSA1

OMO.#: OMO-FP150R07N3E4BOSA1-INFINEON-TECHNOLOGIES

IGBT MODULE VCES 650V 150A
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4000
Menge eingeben:
Der aktuelle Preis von FP150R07N3E4BOSA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
194,38 $
194,38 $
10
184,67 $
1 846,66 $
100
174,95 $
17 494,65 $
500
165,23 $
82 613,65 $
1000
155,51 $
155 508,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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