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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| SI9945AEY-T1-E3 DISTI # 70026077 | Vishay Siliconix | MOSFET,Power,Dual N,60 V,+ 20 V,2.4 W,SO-8,75 A (Continuous),-55 degC RoHS: Compliant | 0 |
|
| SI9945AEYT1E3 | Vishay Intertechnologies | Power Field-Effect Transistor, 3.7A I(D), 60V, 0.08ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | Europe - 1935 | |
| SI9945AEY-T1-E3 DISTI # 1470141 | Vishay Intertechnologies | RoHS: Compliant | 0 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: SI9945AEY OMO.#: OMO-SI9945AEY-1190 |
MOSFET 60V 3.7A 2.4W |
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Mfr.#: SI9945AEY-E3 OMO.#: OMO-SI9945AEY-E3-1190 |
MOSFET RECOMMENDED ALT 781-SI9945BDY-GE3 |
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Mfr.#: SI9945AEY-T1 OMO.#: OMO-SI9945AEY-T1-VISHAY |
MOSFET 2N-CH 60V 3.7A 8SOIC |
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Mfr.#: SI9945AEY-T1-E3 OMO.#: OMO-SI9945AEY-T1-E3-1190 |
MOSFET, Power, Dual N, 60 V, + 20 V, 2.4 W, SO-8, 75 A (Continuous), -55 degC |
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Mfr.#: SI9945AEY-T1-E3 GE3 OMO.#: OMO-SI9945AEY-T1-E3-GE3-1190 |
Neu und Original |
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Mfr.#: SI9945AEY-T1-GE3 OMO.#: OMO-SI9945AEY-T1-GE3-1190 |
MOSFET RECOMMENDED ALT 781-SI9945BDY-GE3 |
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Mfr.#: SI9945AEYT1E3 OMO.#: OMO-SI9945AEYT1E3-1190 |
Power Field-Effect Transistor, 3.7A I(D), 60V, 0.08ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |