IDW40G120C5BFKSA1

IDW40G120C5BFKSA1
Mfr. #:
IDW40G120C5BFKSA1
Hersteller:
Infineon Technologies
Beschreibung:
Schottky Diodes & Rectifiers SIC CHIP/DISCRETE
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IDW40G120C5BFKSA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IDW40G120C5BFKSA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
Schottky-Dioden und Gleichrichter
RoHS:
Y
Produkt:
Schottky-Siliziumkarbid-Dioden
Montageart:
Durchgangsloch
Paket / Koffer:
TO-247-3
Wenn - Vorwärtsstrom:
40 A
Vrrm - Repetitive Sperrspannung:
1.2 kV
Vf - Durchlassspannung:
1.4 V
Ifsm - Vorwärtsstoßstrom:
290 A
Aufbau:
Doppelanode, gemeinsame Kathode
Technologie:
SiC
Ir - Gegenstrom:
23 uA
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Verpackung:
Rohr
Marke:
Infineon-Technologien
Pd - Verlustleistung:
402 W
Produktart:
Schottky-Dioden und Gleichrichter
Werkspackungsmenge:
240
Unterkategorie:
Dioden & Gleichrichter
Handelsname:
CoolSiC
Vr - Sperrspannung:
1.2 kV
Teil # Aliase:
IDW40G120C5B SP001020714
Gewichtseinheit:
1.340411 oz
Tags
IDW40G1, IDW40G, IDW4, IDW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
IDW40G120C5B Series 1200V 110A 5th Generation ThinQ!™SiC Schottky Diode-TO-247-3
***ical
Diode Schottky 1.2KV 110A 3-Pin(3+Tab) TO-247 Tube
***et Europe
Diode Schottky 1.2KV 110A 3-Pin TO-247 Tube
***an P&S
1200V,40A,Silicon Carbide Schottky Diode
***i-Key
DIODE GEN PURP 1200V 55A TO247-3
***ukat
SiC-Schottky 1200V 40A(2x20) TO247
***ronik
SiC-D 1200 40A 1,4V TO247-3
***ark
Silicon Carbide Schottky Diode, 1.2Kv; Product Range:thinq Series; Diode Configuration:common Cathode; Repetitive Reverse Voltage Vrrm Max:1.2Kv; Continuous Forward Current If:110A; Total Capacitive Charge Qc:202Nc; Diode Case Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. SILICON CARBIDE SCHOTTKY DIODE, 1.2KV; Product Range:thinQ Series; Diode Configuration:Common Cathode; Repetitive Reverse Voltage Vrrm Max:1.2kV; Continuous Forward Current If:110A; Total Capacitive Charge Qc:202nC; Diode Case Style:TO-247; No. of Pins:3 Pin; Junction Temperature Tj Max:175°C; Automotive Qualification Standard:-; SVHC:No SVHC (27-Jun-2018); Forward Current If(AV):110A; Forward Surge Current Ifsm Max:145A; Forward Voltage VF Max:1.65V; Operating Temperature Max:175°C; Semiconductor Technology:SiC
***nell
DIODO SCHOTTKY CARB. SILICIO, 1.2KV; Gamma Prodotti:thinQ Series; Configurazione Diodo:Catodo Comune; Tensione Inversa Ripetitiva Vrrm Max:1.2kV; Corrente Diretta Continua If:110A; Potenza Reattiva Capacitiva Qc:202nC; Modello Involucro Diodo:TO-247; Numero di Pin:3 Pin; Temperatura di Giunzione Tj Max:175°C; Standard di Qualifica Automotive:-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Corrente Diretta If(AV):110A; Corrente di Picco Diretta Ifsm Max:145A; Tecnologia Semiconduttori:SiC; Temperatura di Esercizio Max:175°C; Tensione Diretta VF Max:1.65V
***ineon
With CoolSiC generation 5 Infineon presents a new leading edge technology for SiC Schottky Barrier diodes, delivering market leading efficiency, more system reliability at attractive cost point. Infineons thin wafer technology, already introduced with Generation 2, is now combined with a new, merged pn junction bringing improved conduction losses, thermal characteristics and surge capabilities. The result is a series of products delivering improved efficiency and reliability in PFC and Boost stages over all load conditions with respect to all previous CoolSiC generations. | Summary of Features: Best-in-class forward voltage (V F); No reverse recovery charge; Mild positive temperature dependency of V F; Best-in-class surge current capability; Excellent thermal performance; Up to 40A rated diode | Benefits: Highest system efficiency; Improved system efficiency at low switching frequencies; Increased power density at high switching frequencies; Higher system reliability; Reduced EMI | Target Applications: Solar inverters; UPS; 3-phase SMPS; Motor drives
CoolSiC™ Schottky Diodes
Infineon CoolSiC™ Schottky Diodes deliver high reliability, optimum efficiency, and industry-leading SiC performance. The Infineon comprehensive portfolio of Silicon Carbide (SiC) devices encompasses 600V and 650V to 1200V Schottky diodes. A much higher breakdown voltage can be reached in SiC material Schottky diodes.
Gen 5 1200V CoolSiC™ Schottky Diodes
Infineon Gen 5 1200V CoolSiC™ Schottky Diodes are offered with forward currents up to 40A for TO-247, 20A in TO-220 and 10A in DPAK. CoolSiC Diodes target solar inverters, UPS, 3P SMPS, energy storage, and motor drives applications. With reduction of forward voltage and temperature dependency, the diodes bring a new level of system efficiency.
Teil # Mfg. Beschreibung Aktie Preis
IDW40G120C5BFKSA1
DISTI # V99:2348_06377009
Infineon Technologies AGDiode Schottky 1.2KV 110A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
134
  • 500:$20.8100
  • 250:$21.7200
  • 100:$21.8600
  • 25:$24.8299
  • 10:$25.8299
  • 5:$27.4400
  • 1:$27.7400
IDW40G120C5BFKSA1
DISTI # IDW40G120C5BFKSA1-ND
Infineon Technologies AGDIODE GEN PURP 1200V 55A TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube
256In Stock
  • 10:$32.0560
  • 1:$34.5100
IDW40G120C5BFKSA1
DISTI # 30341104
Infineon Technologies AGDiode Schottky 1.2KV 110A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
134
  • 100:$21.8600
  • 25:$24.8298
  • 10:$25.8298
  • 5:$27.4400
  • 1:$27.7400
IDW40G120C5BFKSA1
DISTI # IDW40G120C5BFKSA1
Infineon Technologies AGDiode Schottky 1.2KV 110A 3-Pin TO-247 Tube - Rail/Tube (Alt: IDW40G120C5BFKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube
Americas - 0
  • 240:$22.3900
  • 480:$21.5900
  • 960:$20.7900
  • 1440:$20.0900
  • 2400:$19.6900
IDW40G120C5BFKSA1
DISTI # SP001020714
Infineon Technologies AGDiode Schottky 1.2KV 110A 3-Pin TO-247 Tube (Alt: SP001020714)
RoHS: Compliant
Min Qty: 1
Container: Tube
Europe - 0
  • 1:€23.9900
  • 10:€21.9900
  • 25:€21.0900
  • 50:€20.2900
  • 100:€19.5900
  • 500:€18.8900
  • 1000:€17.5900
IDW40G120C5BFKSA1
DISTI # 97Y1812
Infineon Technologies AGSILICON CARBIDE SCHOTTKY DIODE, 1.2KV,Product Range:thinQ Series,Diode Configuration:Common Cathode,Repetitive Reverse Voltage Vrrm Max:1.2kV,Continuous Forward Current If:110A,Total Capacitive Charge Qc:202nC,Diode Case , RoHS Compliant: Yes234
  • 1:$35.1400
  • 5:$34.8200
  • 10:$32.7100
  • 25:$31.4100
  • 50:$29.9500
  • 100:$28.4900
  • 250:$27.3600
IDW40G120C5BFKSA1
DISTI # 726-IDW40G120C5BFKSA
Infineon Technologies AGSchottky Diodes & Rectifiers SIC CHIP/DISCRETE
RoHS: Compliant
287
  • 1:$30.0500
  • 5:$29.7400
  • 10:$27.7200
  • 25:$26.4700
  • 100:$23.6700
  • 250:$22.5800
IDW40G120C5BFKSA1
DISTI # IDW40G120C5BFKSA1
Infineon Technologies AGDiode: Schottky rectifying,SiC,THT,1.2kV,2x20A,402W,Ir:23uA38
  • 1:$34.8000
  • 3:$31.2700
  • 10:$29.2200
IDW40G120C5BFKSA1
DISTI # IDW40G120C5B
Infineon Technologies AGSiC-Schottky 1200V 40A(2x20) TO247
RoHS: Compliant
30
  • 1:€25.3000
  • 25:€21.3000
  • 100:€19.3000
  • 200:€18.5500
IDW40G120C5BFKSA1
DISTI # 2617416
Infineon Technologies AGSILICON CARBIDE SCHOTTKY DIODE, 1.2KV
RoHS: Compliant
240
  • 1:£22.9600
  • 5:£22.7300
  • 10:£20.2300
  • 50:£18.7400
  • 100:£17.2500
IDW40G120C5BFKSA1
DISTI # C1S322000567328
Infineon Technologies AGRectifier Diodes
RoHS: Compliant
134
  • 100:$21.8600
  • 25:$24.8298
  • 10:$25.8200
  • 5:$27.4400
  • 1:$27.7400
IDW40G120C5BFKSA1
DISTI # 2617416
Infineon Technologies AGSILICON CARBIDE SCHOTTKY DIODE, 1.2KV
RoHS: Compliant
234
  • 1:$49.9300
  • 10:$46.0500
Bild Teil # Beschreibung
10M04SCE144I7G

Mfr.#: 10M04SCE144I7G

OMO.#: OMO-10M04SCE144I7G

FPGA - Field Programmable Gate Array non-volatile FPGA, 101 I/O, 144EQFP
ADUM5028-5BRIZ

Mfr.#: ADUM5028-5BRIZ

OMO.#: OMO-ADUM5028-5BRIZ

Switching Voltage Regulators isoPower 3kV,
RKZE-2415D

Mfr.#: RKZE-2415D

OMO.#: OMO-RKZE-2415D

Isolated DC/DC Converters 2W 24Vin +/-15Vout +/-66mA Dual SIP7
CRCW12060000Z0EAC

Mfr.#: CRCW12060000Z0EAC

OMO.#: OMO-CRCW12060000Z0EAC

Thick Film Resistors - SMD 1/4Watt 0ohms Commercial Use
10M04SCE144I7G

Mfr.#: 10M04SCE144I7G

OMO.#: OMO-10M04SCE144I7G-INTEL

FPGA - Field Programmable Gate Array non-volatile FPGA, 101 I/O, 144EQFP
RKZE-2415D

Mfr.#: RKZE-2415D

OMO.#: OMO-RKZE-2415D-RECOM-POWER

2W DC/DC-Converter 'ECONOLINE' SIP7 3kV unreg
C2225C102MHRACTU

Mfr.#: C2225C102MHRACTU

OMO.#: OMO-C2225C102MHRACTU-KEMET

Multilayer Ceramic Capacitors MLCC - SMD/SMT 3000volts 1000pF 20% X7R
CRCW12060000Z0EAC

Mfr.#: CRCW12060000Z0EAC

OMO.#: OMO-CRCW12060000Z0EAC-VISHAY-DALE

D25/CRCW1206-C 0R0 ET1 E3
B58035U5106M001

Mfr.#: B58035U5106M001

OMO.#: OMO-B58035U5106M001-EPCOS

CAP CER 10UF 500V 20SMD
ERJ-P08F1503V

Mfr.#: ERJ-P08F1503V

OMO.#: OMO-ERJ-P08F1503V-PANASONIC

Thick Film Resistors - SMD 1206 150Kohms 0.66W 1% Tol
Verfügbarkeit
Aktie:
350
Auf Bestellung:
2333
Menge eingeben:
Der aktuelle Preis von IDW40G120C5BFKSA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
20,01 $
20,01 $
5
19,80 $
99,00 $
10
18,45 $
184,50 $
25
17,63 $
440,75 $
100
15,76 $
1 576,00 $
250
15,03 $
3 757,50 $
500
14,82 $
7 410,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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