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SI4963BDY-T1-E3

SI4963BDY-T1-E3
Mfr. #:
SI4963BDY-T1-E3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 20V 6.2A 2W
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI4963BDY-T1-E3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI4963BDY-T1-E3 DatasheetSI4963BDY-T1-E3 Datasheet (P4-P6)SI4963BDY-T1-E3 Datasheet (P7-P8)
ECAD Model:
Mehr Informationen:
SI4963BDY-T1-E3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
E
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SO-8
Handelsname:
TrenchFET
Verpackung:
Spule
Serie:
SI4
Marke:
Vishay / Siliconix
Produktart:
MOSFET
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Teil # Aliase:
SI4963BDY-E3
Gewichtseinheit:
0.006596 oz
Tags
SI4963, SI496, SI49, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Japan
Transistor MOSFET Array Dual P-CH 20V 4.9A 8-Pin SOIC T/R
***(Formerly Allied Electronics)
SI4963BDY-T1-E3 P-channel MOSFET Module; 4.9 A; 20 V; 8-Pin SOIC
***ure Electronics
Dual P-Channel 20 V 32 mOhms Surface Mount Power Mosfet - SOIC-8
***nell
MOSFET, P CH, -20V, 0.04OHM, -4.9A, SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.9A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.04ohm; Rds(on) Test Voltage Vgs:-2.5V; Power Dissipation Pd:1.1W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:-
***Yang
Transistor MOSFET Array Dual N-CH 20V 5.4A 8-Pin Micro8 T/R - Tape and Reel
***ineon
Benefits: RoHS Compliant; Fast Switching; Low Profile (less than 1.1mm); Dual N-Channel MOSFET
***ure Electronics
Dual N-Channel 20 V 0.03 Ohm 26 nC HEXFET® Power Mosfet - MICRO-8
***ineon SCT
20V Dual N-Channel HEXFET Power MOSFET in a Micro 8 package, MICRO8, RoHS
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Continuous Drain Current, Id:5.4A; Package/Case:8-uSOIC; Power Dissipation, Pd:1.3W; Drain Source On Resistance @ 2.7V:45mohm ;RoHS Compliant: Yes
***nell
MOSFET, DUAL N-CH , 20V, 5.4A, USOIC-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 5.4A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.03ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1.2V; Power Dissipation Pd: 1.3W; Transistor Case Style: µSOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 2 - 1 year; SVHC: No SVHC (27-Jun-2018)
***trelec
Transistor Polarity = N-Channel / Configuration = Dual / Continuous Drain Current (Id) A = 5.4 / Drain-Source Voltage (Vds) V = 20 / ON Resistance (Rds(on)) mOhm = 30 / Gate-Source Voltage V = 12 / Fall Time ns = 16 / Rise Time ns = 11 / Turn-OFF Delay Time ns = 36 / Turn-ON Delay Time ns = 8.5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = Micro8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 1.3
***(Formerly Allied Electronics)
IRF7317PBF Dual N/P-channel MOSFET Transistor, 5.3 A, 6.6 A, 20 V, 8-Pin SOIC | Infineon IRF7317PBF
***ure Electronics
Dual N/P-Channel 20 V 0.029/0.058 Ohm 18/19 nC HEXFET® Power Mosfet - SOIC-8
***ineon SCT
20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
***roFlash
Power Field-Effect Transistor, 6.6A I(D), 20V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***nell
MOSFET, DUAL, NP, LOGIC, SO-8; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 6.6A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.023ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 700
***ark
Dual N/P Channel Mosfet, 20V, Soic; Channel Type:Complementary N And P Channel; Drain Source Voltage Vds N Channel:20V; Drain Source Voltage Vds P Channel:20V; Continuous Drain Current Id N Channel:6.6A; No. Of Pins:8Pins Rohs Compliant: Yes |Infineon IRF7317PBF
***et
Transistor MOSFET Array Dual N-CH 20V 5.4A 8-Pin TDSON T/R
***i-Key
MOSFET 2N-CH 20V 5.4A 8DSO
***i-Key Marketplace
SMALL SIGNAL N-CHANNEL MOSFET
***ure Electronics
Single P-Channel 20 V 0.04 Ohms Surface Mount Power Mosfet - SOIC-8
*** Source Electronics
Trans MOSFET P-CH 20V 4.5A 8-Pin SOIC N T/R / MOSFET P-CH 20V 4.5A 8-SOIC
***enic
20V 4.5A 1.3W 40m´Î@4.5V6.2A 1.5V@250Ã×A P Channel SOIC-8_150mil MOSFETs ROHS
***ment14 APAC
P CH MOSFET; Transistor Polarity:P Chann; P CH MOSFET; Transistor Polarity:P Channel; Continuous Drain Current Id:-6.2A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):30mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-600mV; Power Dissipation Pd:2.5W
*** Source Electronics
Trans MOSFET P-CH 20V 4.5A 8-Pin SOIC N T/R / MOSFET P-CH 20V 4.5A 8-SOIC
***ure Electronics
Si9433BDY Series 20 V 6.2 A 0.040 Ohm Surface Mount P-Channel MOSFET - SO-8
***ment14 APAC
MOSFET, P CH, 20V, 4.5A, 8SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.5A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):30mohm; Rds(on) Test Voltage Vgs:-4.5V; Power Dissipation Pd:1.3W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-4.5A; Power Dissipation Pd:1.3W; Voltage Vgs Max:12V
***icroelectronics
N-channel 20 V, 0.030 Ohm, 6 A, 2.7 V drive STripFET(TM) II Power MOSFET in SO-8 package
***ure Electronics
N Channel 20 V 40 mOhm SMT StripFET II Power MOSFET - SOIC-8
*** Source Electronics
Trans MOSFET N-CH 20V 6A 8-Pin SO N T/R / MOSFET N-CH 20V 6A 8SOIC
***ark
MOSFET, N, SO-8; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:2.7V; Gate Source Threshold Voltage Max:600mV; Power Dissipation:2.5W RoHS Compliant: Yes
***nell
MOSFET, N, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 6A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.045ohm; Rds(on) Test Voltage Vgs: 2.7V; Threshold Voltage Vgs: 600mV; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 6A; Fall Time tf: 10ns; No. of Transistors: 1; On State Resistance @ Vgs = 4.5V: 40mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pin Configuration: (1+2+3)S,4G, (8+7+6+5)D; Pulse Current Idm: 24A; Rise Time: 33ns; Voltage Vds Typ: 20V; Voltage Vgs Max: 12V; Voltage Vgs Rds on Measurement: 2.7V
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Teil # Mfg. Beschreibung Aktie Preis
SI4963BDY-T1-E3
DISTI # V36:1790_09216505		Vishay IntertechnologiesTrans MOSFET P-CH 20V 4.9A 8-Pin SOIC N T/R
RoHS: Compliant		17500
  • 5000:$0.4965
  • 2500:$0.5264
SI4963BDY-T1-E3
DISTI # V72:2272_09216505		Vishay IntertechnologiesTrans MOSFET P-CH 20V 4.9A 8-Pin SOIC N T/R
RoHS: Compliant		2197
  • 1000:$0.5762
  • 500:$0.7336
  • 250:$0.8512
  • 100:$0.8861
  • 25:$1.0192
  • 10:$1.1324
  • 1:$1.3899
SI4963BDY-T1-E3
DISTI # SI4963BDY-T1-E3CT-ND		Vishay SiliconixMOSFET 2P-CH 20V 4.9A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		14153In Stock
  • 1000:$0.5822
  • 500:$0.7375
  • 100:$0.8928
  • 10:$1.1450
  • 1:$1.2800
SI4963BDY-T1-E3
DISTI # SI4963BDY-T1-E3DKR-ND		Vishay SiliconixMOSFET 2P-CH 20V 4.9A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		14153In Stock
  • 1000:$0.5822
  • 500:$0.7375
  • 100:$0.8928
  • 10:$1.1450
  • 1:$1.2800
SI4963BDY-T1-E3
DISTI # SI4963BDY-T1-E3TR-ND		Vishay SiliconixMOSFET 2P-CH 20V 4.9A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		7500In Stock
  • 12500:$0.4824
  • 5000:$0.5012
  • 2500:$0.5276
SI4963BDY-T1-E3
DISTI # 30882871		Vishay IntertechnologiesTrans MOSFET P-CH 20V 4.9A 8-Pin SOIC N T/R
RoHS: Compliant		17500
  • 2500:$0.5264
SI4963BDY-T1-E3
DISTI # 33632322		Vishay IntertechnologiesTrans MOSFET P-CH 20V 4.9A 8-Pin SOIC N T/R
RoHS: Compliant		2500
  • 2500:$0.4668
SI4963BDY-T1-E3
DISTI # 33962571		Vishay IntertechnologiesTrans MOSFET P-CH 20V 4.9A 8-Pin SOIC N T/R
RoHS: Compliant		2197
  • 15:$1.3899
SI4963BDY-T1-E3
DISTI # SI4963BDY-T1-E3		Vishay IntertechnologiesTrans MOSFET P-CH 20V 4.9A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4963BDY-T1-E3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$0.5627
  • 15000:$0.5783
  • 10000:$0.5947
  • 5000:$0.6199
  • 2500:$0.6389
SI4963BDY-T1-E3
DISTI # SI4963BDY-T1-E3		Vishay IntertechnologiesTrans MOSFET P-CH 20V 4.9A 8-Pin SOIC N T/R (Alt: SI4963BDY-T1-E3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 25000:€0.4729
  • 15000:€0.4939
  • 10000:€0.5589
  • 5000:€0.6889
  • 2500:€0.9609
SI4963BDY-T1-E3
DISTI # 69W7205		Vishay IntertechnologiesTrans MOSFET P-CH 20V 4.9A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 69W7205)
RoHS: Not Compliant
Min Qty: 1
Container: Ammo Pack		Americas - 0
    SI4963BDY-T1-E3.
    DISTI # 30AC0174    		Vishay IntertechnologiesDUAL P CHANNEL MOSFET, -20V, SOIC, FULL REEL,Transistor Polarity:Dual P Channel,Continuous Drain Current Id:6.5A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.025ohm,Rds(on) Test Voltage Vgs:12V,No. of Pins:8Pins RoHS Compliant: No0
    • 10000:$0.6880
    • 6000:$0.7150
    • 4000:$0.7430
    • 2000:$0.8250
    • 1000:$0.8690
    • 1:$0.9240
    SI4963BDY-T1-E3
    DISTI # 70026239    		Vishay SiliconixSI4963BDY-T1-E3 P-channel MOSFET Module,4.9 A,20 V,8-Pin SOIC
    RoHS: Compliant    		0
    • 2500:$0.9370
    • 5000:$0.8820
    • 7500:$0.8260
    SI4963BDY-T1-E3
    DISTI # 781-SI4963BDY-E3    		Vishay IntertechnologiesMOSFET 20V 6.2A 2W
    RoHS: Compliant    		7295
    • 1:$1.5300
    • 10:$1.2600
    • 100:$0.9700
    • 500:$0.8340
    SI4963BDY-T1-E3Vishay Siliconix 2500
    • 5:$1.0500
    • 21:$0.6825
    • 75:$0.3938
    • 255:$0.3360
    • 552:$0.2940
    • 1311:$0.2730
    SI4963BDY-T1-E3Vishay Siliconix 2000
    • 477:$0.3640
    • 87:$0.4200
    • 1:$1.4000
    SI4963BDYT1E3Vishay IntertechnologiesSmall Signal Field-Effect Transistor, 4.9A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant    		1635
      SI4963BDY-T1-E3
      DISTI # 2335325      		Vishay IntertechnologiesMOSFET, P CH, -20V, 0.04OHM, -4.9A, SOIC
      RoHS: Compliant      		4509
      • 500:$1.1200
      • 100:$1.3500
      • 10:$1.7300
      • 1:$1.9300
      SI4963BDY-T1-E3
      DISTI # 2335325      		Vishay IntertechnologiesMOSFET, P CH, -20V, 0.04OHM, -4.9A, SOIC4740
      • 500:£0.6150
      • 250:£0.6850
      • 100:£0.7550
      • 10:£1.0300
      • 1:£1.3000
      SI4963BDY-T1-E3Vishay IntertechnologiesMOSFET 20V 6.2A 2WAmericas -
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        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        1990
        Menge eingeben:
        Der aktuelle Preis von SI4963BDY-T1-E3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        1,53 $
        1,53 $
        10
        1,26 $
        12,60 $
        100
        0,97 $
        97,00 $
        500
        0,83 $
        417,00 $
        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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