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IRG4IBC20WPBF

IRG4IBC20WPBF
Mfr. #:
IRG4IBC20WPBF
Hersteller:
Infineon Technologies
Beschreibung:
IGBT Transistors 600V Warp 60-150kHz
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRG4IBC20WPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRG4IBC20WPBF DatasheetIRG4IBC20WPBF Datasheet (P4-P6)IRG4IBC20WPBF Datasheet (P7-P8)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO-220FP-3
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
600 V
Kollektor-Emitter-Sättigungsspannung:
2.16 V
Maximale Gate-Emitter-Spannung:
20 V
Kontinuierlicher Kollektorstrom bei 25 C:
12 A
Pd - Verlustleistung:
34 W
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Verpackung:
Rohr
Kontinuierlicher Kollektorstrom Ic Max:
12 A
Höhe:
9.1 mm
Länge:
10.6 mm
Breite:
4.8 mm
Marke:
Infineon-Technologien
Gate-Emitter-Leckstrom:
100 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
2000
Unterkategorie:
IGBTs
Teil # Aliase:
SP001537234
Gewichtseinheit:
0.081130 oz
Tags
IRG4IBC20W, IRG4IBC2, IRG4IBC, IRG4IB, IRG4I, IRG4, IRG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 12A 3-Pin(3+Tab) TO-220 Full-Pak
***ied Electronics & Automation
600V Warp 60-150 kHz Discrete IGBT in a TO-220 FullPak package
***ineon
Target Applications: Air Conditioner; Dishwasher; Fan; PFC; Pump; Washing Machine
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:11.8A; Collector Emitter Saturation Voltage, Vce(sat):2.6V; Power Dissipation, Pd:34W; Package/Case:TO-220 ;RoHS Compliant: Yes
***ment14 APAC
IGBT, 600V, 11.8A, TO-220FP; Transistor Type:IGBT; DC Collector Current:11.8A; Collector Emitter Voltage Vces:2.16V; Power Dissipation Pd:34W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:11.8A; Current Temperature:25°C; Device Marking:IRG4IBC20WPbF; Fall Time Typ:64ns; Fall Time tf:64ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220FP; Power Dissipation Max:34W; Power Dissipation Pd:34W; Power Dissipation Pd:34W; Pulsed Current Icm:52A; Rise Time:14ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
Teil # Mfg. Beschreibung Aktie Preis
IRG4IBC20WPBF
DISTI # IRG4IBC20WPBF-ND		Infineon Technologies AGIGBT 600V 12A 34W TO220FP
RoHS: Compliant
Min Qty: 2000
Container: Tube		Limited Supply - Call
    IRG4IBC20WPBF
    DISTI # IRG4IBC20WPBF    		Infineon Technologies AGTrans IGBT Chip N-CH 600V 12A 3-Pin(3+Tab) TO-220 Full-Pak - Bulk (Alt: IRG4IBC20WPBF)
    Min Qty: 329
    Container: Bulk    		Americas - 0
    • 3290:$0.9659
    • 1645:$0.9849
    • 987:$1.0239
    • 658:$1.0639
    • 329:$1.1089
    IRG4IBC20WPBF
    DISTI # 70018444    		Infineon Technologies AG600V Warp 60-150 kHz Discrete IGBT IN A TO-220 FULLPAK Package
    RoHS: Compliant    		0
    • 350:$2.2300
    IRG4IBC20WPBF
    DISTI # 942-IRG4IBC20WPBF    		Infineon Technologies AGIGBT Transistors 600V Warp 60-150kHz
    RoHS: Compliant    		0
      IRG4IBC20WPBFInfineon Technologies AGInsulated Gate Bipolar Transistor, 11.8A I(C), 600V V(BR)CES, N-Channel, TO-220AB
      RoHS: Compliant      		447
      • 1000:$1.0000
      • 500:$1.0500
      • 100:$1.1000
      • 25:$1.1400
      • 1:$1.2300
      IRG4IBC20WPBFInternational RectifierInsulated Gate Bipolar Transistor, 11.8A I(C), 600V V(BR)CES, N-Channel, TO-220AB
      RoHS: Compliant      		10
      • 1000:$1.0000
      • 500:$1.0500
      • 100:$1.1000
      • 25:$1.1400
      • 1:$1.2300
      IRG4IBC20WPBF
      DISTI # 8650454      		Infineon Technologies AGIGBT, 600V, 11.8A, TO-220FP
      RoHS: Compliant      		0
      • 1000:$1.7100
      • 500:$2.0500
      • 100:$2.3500
      • 10:$2.9200
      • 1:$3.4500
      Bild Teil # Beschreibung
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      Mfr.#: IRG4IBC20FDPBF

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      IRG4IBC20WPBF

      Mfr.#: IRG4IBC20WPBF

      OMO.#: OMO-IRG4IBC20WPBF

      		 IGBT Transistors 600V Warp 60-150kHz
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      Mfr.#: IRG4IBC20FDPBF

      OMO.#: OMO-IRG4IBC20FDPBF-INFINEON-TECHNOLOGIES

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      Mfr.#: IRG4IBC20KDPBF

      OMO.#: OMO-IRG4IBC20KDPBF-INFINEON-TECHNOLOGIES

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      Mfr.#: IRG4IBC10UDPBF

      OMO.#: OMO-IRG4IBC10UDPBF-INFINEON-TECHNOLOGIES

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      IRG4IBC10UD

      Mfr.#: IRG4IBC10UD

      OMO.#: OMO-IRG4IBC10UD-INFINEON-TECHNOLOGIES

      		 IGBT 600V 6.8A 25W TO220FP
      IRG4IBC30KDPBF.

      Mfr.#: IRG4IBC30KDPBF.

      OMO.#: OMO-IRG4IBC30KDPBF--1190

      		 DC Collector Current:17A, Collector Emitter Saturation Voltage Vce(on):2.88V, Power Dissipation Pd:45W, Collector Emitter Voltage V(br)ceo:600V, No. of Pins:3Pins, Operating Temperature Max:150°C
      IRG4IBC30WPBF.

      Mfr.#: IRG4IBC30WPBF.

      OMO.#: OMO-IRG4IBC30WPBF--1190

      		 Neu und Original
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1000
      Menge eingeben:
      Der aktuelle Preis von IRG4IBC20WPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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