Produkteigenschaft
Attributwert

Hersteller:: Toshiba

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: UDFN6B-6

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 60 V

Id - Kontinuierlicher Drainstrom:: 6 A

Rds On - Drain-Source-Widerstand:: 28 mOhms

Vgs th - Gate-Source-Schwellenspannung:: 1.5 V

Vgs - Gate-Source-Spannung:: 20 V

Qg - Gate-Ladung:: 9.3 nC

Minimale Betriebstemperatur:: -

Maximale Betriebstemperatur:: + 150 C

Pd - Verlustleistung:: 1.25 W

Aufbau:: Single

Kanalmodus:: Erweiterung

Verpackung:: Spule

Transistortyp:: 1 N-Channel

Marke:: Toshiba

Abfallzeit:: 6 ns

Produktart:: MOSFET

Anstiegszeit:: 48 ns

Werkspackungsmenge:: 3000

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 18 ns

Typische Einschaltverzögerungszeit:: 63 ns

Gewichtseinheit:: 0.000300 oz

Tags: SSM6K3, SSM6K, SSM6, SSM

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SSM6K341NU,LF Beschreibung

***ical: Trans MOSFET N-CH Si 60V 6A 6-Pin UDFN-B EP T/R

***et: N-Channel MOSFET 60V Drain to Source Voltage 6A Drain Current 1.28W Power Dissipation Surface Mount 6-Pin UDFN T/R

***i-Key: MOSFET N-CH 60V 6A 6-UDFNB

SSM6K341NU,LF Mehr Informationen

SSM6K Silicon N-Channel MOSFETs: Toshiba SSM6K Silicon N-Channel Small Signal MOSFETs are designed with advanced technologies, achieving low RON characteristics. The SSM6K is very compact and thin at 2 x 2mm and 2.9 x 2.8mm, offering the low loss and compact size MOSFETs required for battery-powered devices such as smartphones and wearable devices.

MOSFETs for Industrial and Lighting Applications: Toshiba 60V and 100V Power MOSFETs for Industrial and Lighting Applications include the 60V SSM3K341 and the 100V SSM3K361 families. These new MOSFETs feature industry-leading low on-resistance and are suited to load switching in television and industrial lighting. They are also good candidates for industrial automation systems require low to medium amounts of power.

SSM6 Low On-resistance MOSFET: Toshiba SSM6 Low On-resistance MOSFETs with high-speed switching operate as both power management switches and analog switches. These MOSFETs provide very low on-resistance as low as 1.1mΩ to a 115Ω maximum for different sets of gate to source voltage range. The SSM6 MOSFETs are available in small profile packages with surface mount compatibility. These MOSFETs offer a low drain to source on-resistance and operate as DC to DC converters. The SSM6 MOSFETs drive a 1.2V minimum to 4.5V maximum gate voltage. These MOSFETs deliver less drain power dissipation up to 150mW producing less heat. The SM66 MOSFETs operate at 12V to 100V input voltage range.

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