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NDS8858H

NDS8858H
Mfr. #:
NDS8858H
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET CMOSFET Half Bridge
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
NDS8858H Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NDS8858H DatasheetNDS8858H Datasheet (P4-P6)NDS8858H Datasheet (P7-P9)NDS8858H Datasheet (P10-P12)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SO-8
Anzahl der Kanäle:
2 Channel
Polarität des Transistors:
N-Kanal, P-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
6.3 A
Rds On - Drain-Source-Widerstand:
35 mOhms
Vgs - Gate-Source-Spannung:
20 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
2.5 W
Aufbau:
Dual
Kanalmodus:
Erweiterung
Verpackung:
Spule
Höhe:
1.75 mm
Länge:
4.9 mm
Serie:
NDS8858H
Transistortyp:
1 N-Channel, 1 P-Channel
Typ:
MOSFET
Breite:
3.9 mm
Marke:
ON Semiconductor / Fairchild
Abfallzeit:
10 ns, 19 ns
Produktart:
MOSFET
Anstiegszeit:
13 ns, 20 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
29 ns, 40 ns
Typische Einschaltverzögerungszeit:
12 ns, 9 ns
Teil # Aliase:
NDS8858H_NL
Gewichtseinheit:
0.008127 oz
Tags
NDS8858H, NDS8858, NDS885, NDS88, NDS8, NDS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N/P-CH 30V 6.3A/4.8A 8-Pin SOIC N T/R
***ark
Dual N/p Channel Mosfet, 30V, Soic, Full Reel; Transistor Polarity:complementary N And P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:6.3A; On Resistance Rds(On):0.035Ohm; Transistor Mounting:surface Mount Rohs Compliant: Yes
***rchild Semiconductor
These Complementary MOSFET half bridge devices are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage half bridge applications or CMOS applications when both gates are connected together.
***Yang
Transistor MOSFET Array Dual N-Channel 30V 5.3A 8-Pin SOIC N T/R - Bulk
***-Wing Technology
Tape & Reel (TR) Surface Mount 2N-Channel (Dual) Dual Mosfet Array 30nC @ 10V 5.3A 900mW 10ns
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:5.3A; On Resistance, Rds(on):0.035ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
***rchild Semiconductor
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
*** Source Electronics
MOSFET N/P-CH 30V 7A/5A 8SOIC / Trans MOSFET N/P-CH 30V 7A/5A 8-Pin SOIC T/R
***ure Electronics
Dual N & P-Channel 30 V 0.028 Ohm Surface Mount PowerTrench Mosfet - SOIC-8
*** Stop Electro
Power Field-Effect Transistor, 7A I(D), 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
***ment14 APAC
MOSFET, DUAL, NP, SO-8; Transistor Polarity:N and P Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):28mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Cont Current Id N Channel 2:7A; Cont Current Id P Channel:5A; Current Id Max:7A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:2; On State Resistance N Channel Max:28mohm; On State Resistance P Channel Max:52mohm; Package / Case:SOIC; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:20A; Pulse Current Idm N Channel 2:20A; Pulse Current Idm P Channel:20A; SMD Marking:FDS8958A; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:1.9V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V
***ure Electronics
ZXMN3A06 Series Dual 30 V 0.035 Ohm N-Channel Enhancement Mode MOSFET - SOIC-8
*** Source Electronics
Trans MOSFET N-CH 30V 6.2A 8-Pin SOIC T/R / MOSFET 2N-CH 30V 4.9A 8-SOIC
***nell
MOSFET, DUAL, N, 30V, SO-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 6.2A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.035ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 2.1W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Continuous Drain Current Id, N Channel: 6.2A; Current Id Max: 6.2A; Drain Source Voltage Vds, N Channel: 30V; Module Configuration: Dual; No. of Transistors: 2; On Resistance Rds(on), N Channel: 0.035ohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pin Configuration: 1(S1), 2(G1),3(S2),4(G2),5+6(D2),7+8(D1); Pulse Current Idm: 30A; Termination Type: Surface Mount Device; Voltage Vds Typ: 30V; Voltage Vgs Rds on Measurement: 10V
***ical
Trans MOSFET N/P-CH 30V 7A/5A 8-Pin SOIC N T/R
***emi
30V Dual N & P-Channel PowerTrench® MOSFET
***eco
008, PLASTIC MOLDED, SOIC-8 PKG, NARROW BODY, DUAL DIE
***ark
TAPE REEL / SO8, DUAL NCH & PCH POWER TRENCH MOSFET
***el Electronic
SMALL SIGNAL BIPOLAR TRANSISTOR
***rchild Semiconductor
These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
***(Formerly Allied Electronics)
MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 0.045Ohm;ID -5.8A;SO-8;PD 2.5W;VGS +/-20V
***ure Electronics
Single P-Channel 30 V 0.045 Ohm 59 nC HEXFET® Power Mosfet - SOIC-8
***ineon SCT
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
***ark
Mosfet Transistor; Transistor Polarity:p Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:2.8A; On Resistance Rds(On):0.07Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; No. Of Pins:8Pins Rohs Compliant: Yes
*** Stop Electro
Power Field-Effect Transistor, 6.7A I(D), 30V, 0.045ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
***et
Trans MOSFET P-CH -30V -5.8A 8-Pin SO T/R
***des Inc SCT
P-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS
***el Electronic
MOSFET 30V P-Ch Enh Mode 20Vgss 931pF 19.3nC
***ark
Mosfet Bvdss: 25V~30V So-8 T&r 2.5K
***nell
MOSFET, AEC-Q101, P-CH, -5.8A, -30V, SOIC; Transistor Polarity: P Channel; Drain Source Voltage Vds: 30V; Continuous Drain Current Id: 5.8A; On Resistance Rds(on): 0.019ohm; Transistor Mounting: Surface Mount; Rds(on) Test Voltage Vgs: 10V
Teil # Mfg. Beschreibung Aktie Preis
NDS8858H
DISTI # NDS8858HTR-ND		ON SemiconductorMOSFET N/P-CH 30V 8SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
    NDS8858H
    DISTI # NDS8858HCT-ND    		ON SemiconductorMOSFET N/P-CH 30V 8SOIC
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      NDS8858H
      DISTI # NDS8858HDKR-ND      		ON SemiconductorMOSFET N/P-CH 30V 8SOIC
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        NDS8858H
        DISTI # 34C1625        		ON SemiconductorDUAL N/P CHANNEL MOSFET, 30V, SOIC, FULL REEL,Transistor Polarity:N and P Channel,Continuous Drain Current Id:6.3A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.035ohm,Rds(on) Test Voltage Vgs:10V,No. of Pins:8Pins RoHS Compliant: Yes0
          NDS8858HFairchild Semiconductor CorporationSmall Signal Field-Effect Transistor, 6.3A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
          RoHS: Compliant          		19893
          • 1000:$0.5300
          • 500:$0.5500
          • 100:$0.5800
          • 25:$0.6000
          • 1:$0.6500
          NDS8858H
          DISTI # 512-NDS8858H          		ON SemiconductorMOSFET CMOSFET Half Bridge
          RoHS: Compliant          		0
            NDS8858HFairchild Semiconductor Corporation6300 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET640
            • 371:$0.7500
            • 168:$0.8100
            • 1:$1.8000
            NDS8858HNational Semiconductor Corporation 1531
              NDS8858HFairchild Semiconductor Corporation 1959
                NDS8858HFairchild Semiconductor Corporation 672
                  NDS8858HFairchild Semiconductor Corporation 2286
                    Bild Teil # Beschreibung
                    NDS8434

                    Mfr.#: NDS8434

                    OMO.#: OMO-NDS8434-ON-SEMICONDUCTOR

                    		 MOSFET P-CH 20V 6.5A 8-SOIC
                    NDS8410

                    Mfr.#: NDS8410

                    OMO.#: OMO-NDS8410-ON-SEMICONDUCTOR

                    		 MOSFET N-CH 30V 10A 8-SOIC
                    NDS8425-NL.

                    Mfr.#: NDS8425-NL.

                    OMO.#: OMO-NDS8425-NL--1190

                    		 Neu und Original
                    NDS8426A

                    Mfr.#: NDS8426A

                    OMO.#: OMO-NDS8426A-ON-SEMICONDUCTOR

                    		 MOSFET N-CH 20V 10.5A 8-SOIC
                    NDS8433

                    Mfr.#: NDS8433

                    OMO.#: OMO-NDS8433-1190

                    		 MOSFET Transistor, P-Channel, SO
                    NDS8839

                    Mfr.#: NDS8839

                    OMO.#: OMO-NDS8839-1190

                    		 Neu und Original
                    NDS8858HNL

                    Mfr.#: NDS8858HNL

                    OMO.#: OMO-NDS8858HNL-1190

                    		 Neu und Original
                    NDS8947

                    Mfr.#: NDS8947

                    OMO.#: OMO-NDS8947-ON-SEMICONDUCTOR

                    		 MOSFET 2P-CH 30V 4A 8-SOIC
                    NDS8947-NL

                    Mfr.#: NDS8947-NL

                    OMO.#: OMO-NDS8947-NL-1190

                    		 Neu und Original
                    NDS8963

                    Mfr.#: NDS8963

                    OMO.#: OMO-NDS8963-1190

                    		 Neu und Original
                    Verfügbarkeit
                    Aktie:
                    Available
                    Auf Bestellung:
                    3500
                    Menge eingeben:
                    Der aktuelle Preis von NDS8858H dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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