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STGF8NC60KD

STGF8NC60KD
Mfr. #:
STGF8NC60KD
Hersteller:
STMicroelectronics
Beschreibung:
IGBT Transistors N Ch 500V 0.40 11A Pwr MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
STGF8NC60KD Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
STGF8NC60KD Mehr Informationen STGF8NC60KD Product Details
Produkteigenschaft
Attributwert
Hersteller:
STMicroelectronics
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO-220-3 FP
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
600 V
Maximale Gate-Emitter-Spannung:
20 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Serie:
STGF8NC60KD
Kontinuierlicher Kollektorstrom Ic Max:
7 A
Höhe:
9.3 mm
Länge:
10.4 mm
Breite:
4.6 mm
Marke:
STMicroelectronics
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
1000
Unterkategorie:
IGBTs
Gewichtseinheit:
0.081130 oz
Tags
STGF, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 7A 3-Pin(3+Tab) TO-220FP Tube
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***el Electronic
SRAM Chip Async Single 2.5V/3.3V 8M-bit 512K x 16 10ns 44-Pin TSOP-II
***ser
Power MOSFET Transistors N Ch 500V 0.40 11A Pwr MOSFET
***ponent Stockers USA
7 A 600 V N-CHANNEL IGBT TO-220AB
***icroelectronics
New short circuit rugged "K" series
***ical
Trans IGBT Chip N-CH 600V 7A 65000mW 3-Pin(3+Tab) TO-220AB Tube
***ure Electronics
STGP8NC60K Series N-Channel 600V 8 A Short Circuit Rated PowerMESH IGBT - TO-220
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***nell
IGBT, SINGLE, 600V, 15A, TO-220; DC Collector Current: 15A; Collector Emitter Saturation Voltage Vce(on): 2.2V; Power Dissipation Pd: 65W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3
***ark
IGBT, 600V, 15A, TO-220; Continuous Collector Current:15A; Collector Emitter Saturation Voltage:2.2V; Power Dissipation:65W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:- RoHS Compliant: Yes
***ical
Trans IGBT Chip N-CH 600V 9A 25000mW 3-Pin(3+Tab) TO-220FP Tube
***ure Electronics
STGF10NC60KD Series 600 V 9 A N-Channel Power Mesh IGBT - TO-220FP
***el Electronic
In a Pack of 10, STMicroelectronics STGF10NC60KD IGBT, 9 A 600 V, 3-Pin TO-220FP
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***(Formerly Allied Electronics)
STGF10NC60KD,IGBT N-ch 600V 10A TO220FP
***ark
IGBT, 600V, 9A, 150DEG C, 25W; Continuous Collector Current:9A; Collector Emitter Saturation Voltage:2.5V; Power Dissipation:25W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-RoHS Compliant: Yes
***ical
Trans IGBT Chip N-CH 600V 6A 25000mW 3-Pin(3+Tab) TO-220FP Tube
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***nell
IGBT, TO-220FP; DC Collector Current: 6A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 20W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220FP; No. of Pins: 3Pins; Operating
***et
IGBT 600V 6A 30W TO220
***inecomponents.com
Discrete, High Performance IGBT with Diode
***ser
IGBTs Dis,High Perf IGBT
***i-Key Marketplace
N-CHANNEL IGBT
***et
IGBT 600V 8A 35W TO220F
***i-Key
IGBT SHORT CIRC 600V 5A TO-220F
***i-Key Marketplace
IGBT, 8A, 600V, N-CHANNEL
***el Electronic
RES 4.7K OHM 1% 1/16W 0402
***ser
IGBTs 600V/5A/w/FRD
***el Electronic
Res Thick Film 0402 6.49K Ohm 1% 0.063W(1/16W) ±100ppm/C Pad SMD Automotive T/R
***i-Key
IGBT 600V 6A 22W TO220F
***i-Key Marketplace
IGBT, 6A, 600V, N-CHANNEL
***ser
IGBTs 600V/3A/w/FRD
Teil # Mfg. Beschreibung Aktie Preis
STGF8NC60KD
DISTI # 497-7478-5-ND		STMicroelectronicsIGBT 600V 7A 24W TO220FP
RoHS: Compliant
Min Qty: 2000
Container: Tube		Temporarily Out of Stock
  • 2000:$0.5630
STGF8NC60KD
DISTI # 511-STGF8NC60KD		STMicroelectronicsIGBT Transistors N Ch 500V 0.40 11A Pwr MOSFET
RoHS: Compliant		2474
  • 1:$1.2600
  • 10:$1.0800
  • 100:$0.8240
  • 500:$0.7280
  • 1000:$0.5750
  • 2000:$0.5100
STGF8NC60KDSTMicroelectronics 
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    		 General Purpose Relays SPDT 16A Thru-Hole 18VDC
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    		 IGBT 600V 11A 28W TO220FP
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1985
    Menge eingeben:
    Der aktuelle Preis von STGF8NC60KD dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,26 $
    1,26 $
    10
    1,08 $
    10,80 $
    100
    0,82 $
    82,40 $
    500
    0,73 $
    364,00 $
    1000
    0,58 $
    575,00 $
    2000
    0,51 $
    1 020,00 $
    10000
    0,49 $
    4 910,00 $
    25000
    0,48 $
    11 875,00 $
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