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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| BUK6E2R3-40C,127 DISTI # 1727-5887-ND | Nexperia | MOSFET N-CH 40V 120A I2PAK RoHS: Not compliant Min Qty: 5000 Container: Tube | Limited Supply - Call | |
| BUK6E2R3-40C127 | NXP Semiconductors | Now Nexperia BUK6E2R3-40C - Power Field-Effect Transistor, 120A I(D), 40V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Not Compliant | 2000 |
|
| BUK6E2R3-40C127 | Nexperia | Now Nexperia BUK6E2R3-40C - Power Field-Effect Transistor, 120A I(D), 40V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Not Compliant | 992 |
|
| BUK6E2R3-40C,127 DISTI # 771-BUK6E2R340C127 | Nexperia | MOSFET N-CHAN 40V 120A RoHS: Compliant | 0 |
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: BUK6E2R3-40C OMO.#: OMO-BUK6E2R3-40C-1190 |
Neu und Original |
|
|
Mfr.#: BUK6E2R3-40C127 OMO.#: OMO-BUK6E2R3-40C127-1190 |
Now Nexperia BUK6E2R3-40C - Power Field-Effect Transistor, 120A I(D), 40V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA |
|
Mfr.#: BUK6E2R3-40C,127 |
MOSFET N-CHAN 40V 120A |
