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UJ3C065080T3S

UJ3C065080T3S
Mfr. #:
UJ3C065080T3S
Hersteller:
UnitedSiC
Beschreibung:
MOSFET 650V/80mOhm SiC CASCODE G3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
UJ3C065080T3S Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
UJ3C065080T3S Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
UnitedSiC
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
SiC
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
650 V
Id - Kontinuierlicher Drainstrom:
31 A
Rds On - Drain-Source-Widerstand:
100 mOhms
Vgs th - Gate-Source-Schwellenspannung:
4 V
Vgs - Gate-Source-Spannung:
25 V
Qg - Gate-Ladung:
51 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
190 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Qualifikation:
AEC-Q101
Verpackung:
Rohr
Serie:
UJ3C
Marke:
UnitedSiC
Abfallzeit:
11 ns
Produktart:
MOSFET
Anstiegszeit:
13 ns
Werkspackungsmenge:
50
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
59 ns
Typische Einschaltverzögerungszeit:
18 ns
Tags
UJ3C06508, UJ3C0650, UJ3C0, UJ3C, UJ3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
SiC Cascodes
UnitedSiC SiC Cascodes are the 3rd generation gate drive SiC devices that are a combination of high-performance SiC JFETs and cascode optimized MOSFETs. These SiC Cascodes are the enhancement-mode power switches formed by a high-voltage SiC depletion-mode JFET and a low-voltage silicon MOSFET connected in series. The SiC Cascodes offer the best performance for the intrinsic diode forward drop (VSD) and recovery charge (QRR). These devices deliver ultra-low gate charge but also the best reverse recovery characteristics of any devices of similar ratings. 
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Verfügbarkeit
Aktie:
632
Auf Bestellung:
2615
Menge eingeben:
Der aktuelle Preis von UJ3C065080T3S dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
11,40 $
11,40 $
10
10,86 $
108,60 $
25
10,05 $
251,25 $
50
9,51 $
475,50 $
100
9,24 $
924,00 $
250
8,42 $
2 105,00 $
500
7,88 $
3 940,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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