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BSZ088N03LSGATMA1

BSZ088N03LSGATMA1
Mfr. #:
BSZ088N03LSGATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-CH 30V 40A TSDSON-8
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSZ088N03LSGATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
BSZ088N03LSG, BSZ088N03L, BSZ088, BSZ08, BSZ0, BSZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 30 V 8.8 mOhm 16 nC OptiMOS™ Power Mosfet - TSDSON-8
***ment14 APAC
MOSFET, N CH, 40A, 30V, PG-TSDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):7.3mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:35W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:40A; Power Dissipation Pd:35W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TSDSON-8, RoHS
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
***ure Electronics
Single N-Channel 30 V 8 mOhm 16 nC OptiMOS™ Power Mosfet - TDSON-8
***ment14 APAC
MOSFET, N CH, 100A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:53A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.7mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:35W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:53A; Power Dissipation Pd:35W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
***ure Electronics
Single N-Channel 30 V 8 mOhm 21 nC OptiMOS™ Power Mosfet - TDSON-8
***ment14 APAC
MOSFET, N CH, 53A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:53A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.7mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:35W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:53A; Power Dissipation Pd:35W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
***ure Electronics
Single N-Channel 30 V 17.9 mOhm 14 nC OptiMOS™ Power Mosfet - TDSON-8
***el Electronic
Surface Mount Ceramic Multilayer Capacitor 0.0015uF 5% C0G 50V 0805 Paper T/R
***ark
Mosfet, N-Ch, 30V, 50A, Tdson; Transistor Polarity:n Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.0066Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power Dissipationrohs Compliant: Yes
***ure Electronics
FDMS7680 Series 30 V 6.9 mOhm N-Channel PowerTrench Mosfet - POWER-56
***emi
N-Channel PowerTrench® MOSFET 30V, 6.9mΩ
***r Electronics
Power Field-Effect Transistor, 14A I(D), 30V, 0.0069ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
***emi
N-Channel PowerTrench® MOSFET 30V, 21A, 8.5mΩ
***r Electronics
Power Field-Effect Transistor, 13.5A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***enic
30V 51A 6.3m´Î@10V13.5A 42W 1.9V@250uA 161pF@15V N Channel 1.195nF@15V 13nC@0~5V -55¡Í~+150¡Í@(Tj) Power-56-8 MOSFETs ROHS
***el Electronic
Embedded - Microcontrollers 3 (168 Hours) 145-TFLGA 103 96K x 8 Internal DMA, LVD, POR, PWM, WDT Surface Mount Tray 32-Bit IC MCU 32BIT 512KB FLASH 145LGA
***rchild Semiconductor
The FDMS8880 has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.
***ure Electronics
N-Channel 30 V 7.6 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
***emi
N-Channel PowerTrench® MOSFET 30V, 14A, 7.6mΩ
***Yang
Trans MOSFET N-CH 30V 14A 8-Pin SOIC N T/R - Tape and Reel
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.
***nell
MOSFET, N CH, 30V, 14A, SOIC; Transistor Polarity: N Channel; Continuous Drain Current Id: 14A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0063ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.6V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -55°C
Teil # Mfg. Beschreibung Aktie Preis
BSZ088N03LSGATMA1
DISTI # V72:2272_06390944		Infineon Technologies AGTrans MOSFET N-CH 30V 12A 8-Pin TSDSON EP T/R
RoHS: Compliant		5000
  • 3000:$0.3165
  • 1000:$0.3199
  • 500:$0.4031
  • 250:$0.5135
  • 100:$0.5189
  • 25:$0.6806
  • 10:$0.7561
  • 1:$0.8641
BSZ088N03LSGATMA1
DISTI # V36:1790_06390944		Infineon Technologies AGTrans MOSFET N-CH 30V 12A 8-Pin TSDSON EP T/R
RoHS: Compliant		0
  • 5000000:$0.2394
  • 2500000:$0.2396
  • 500000:$0.2536
  • 50000:$0.2763
  • 5000:$0.2800
BSZ088N03LSGATMA1
DISTI # BSZ088N03LSGATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 30V 40A TSDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		5690In Stock
  • 1000:$0.3418
  • 500:$0.4272
  • 100:$0.5404
  • 10:$0.7050
  • 1:$0.8000
BSZ088N03LSGATMA1
DISTI # BSZ088N03LSGATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 30V 40A TSDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		5690In Stock
  • 1000:$0.3418
  • 500:$0.4272
  • 100:$0.5404
  • 10:$0.7050
  • 1:$0.8000
BSZ088N03LSGATMA1
DISTI # BSZ088N03LSGATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 30V 40A TSDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		5000In Stock
  • 25000:$0.2627
  • 10000:$0.2696
  • 5000:$0.2800
BSZ088N03LSGATMA1
DISTI # 32740486		Infineon Technologies AGTrans MOSFET N-CH 30V 12A 8-Pin TSDSON EP T/R
RoHS: Compliant		5000
  • 32:$0.8641
BSZ088N03LSGATMA1
DISTI # BSZ088N03LSGATMA1		Infineon Technologies AGTrans MOSFET N-CH 30V 12A 8-Pin TSDSON EP - Tape and Reel (Alt: BSZ088N03LSGATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 50000:$0.1999
  • 30000:$0.2039
  • 20000:$0.2109
  • 10000:$0.2189
  • 5000:$0.2269
BSZ088N03LSGATMA1
DISTI # SP000304138		Infineon Technologies AGTrans MOSFET N-CH 30V 12A 8-Pin TSDSON EP (Alt: SP000304138)
RoHS: Compliant
Min Qty: 5000		Europe - 0
  • 50000:€0.2109
  • 30000:€0.2269
  • 20000:€0.2459
  • 10000:€0.2689
  • 5000:€0.3279
BSZ088N03LS G
DISTI # 726-BSZ088N03LSG		Infineon Technologies AGMOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3
RoHS: Compliant		4368
  • 1:$0.7300
  • 10:$0.6130
  • 100:$0.3950
  • 1000:$0.3160
  • 5000:$0.2670
  • 10000:$0.2570
  • 25000:$0.2470
Bild Teil # Beschreibung
BSZ088N03LS G

Mfr.#: BSZ088N03LS G

OMO.#: OMO-BSZ088N03LS-G

 MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3
BSZ088N03MS G

Mfr.#: BSZ088N03MS G

OMO.#: OMO-BSZ088N03MS-G

 MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M
BSZ088N03LS G

Mfr.#: BSZ088N03LS G

OMO.#: OMO-BSZ088N03LS-G-1190

 MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3
BSZ088N03LSG

Mfr.#: BSZ088N03LSG

OMO.#: OMO-BSZ088N03LSG-1190

 Trans MOSFET N-CH 30V 12A 8-Pin TSDSON T/R - Bulk (Alt: BSZ088N03LSG)
BSZ088N03LSGATMA1

Mfr.#: BSZ088N03LSGATMA1

OMO.#: OMO-BSZ088N03LSGATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 30V 40A TSDSON-8
BSZ088N03LSGATMA1 , TFZV

Mfr.#: BSZ088N03LSGATMA1 , TFZV

OMO.#: OMO-BSZ088N03LSGATMA1-TFZV-1190

 Neu und Original
BSZ088N03M

Mfr.#: BSZ088N03M

OMO.#: OMO-BSZ088N03M-1190

 Neu und Original
BSZ088N03MSG

Mfr.#: BSZ088N03MSG

OMO.#: OMO-BSZ088N03MSG-1190

 Trans MOSFET N-CH 30V 11A 8-Pin TSDSON T/R - Bulk (Alt: BSZ088N03MSG)
BSZ088N03MSGATMA1

Mfr.#: BSZ088N03MSGATMA1

OMO.#: OMO-BSZ088N03MSGATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 30V 40A TSDSON-8
BSZ088N03MS G

Mfr.#: BSZ088N03MS G

OMO.#: OMO-BSZ088N03MS-G-317

 RF Bipolar Transistors MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
5000
Menge eingeben:
Der aktuelle Preis von BSZ088N03LSGATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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