MRF6S19100HR3

MRF6S19100HR3
Mfr. #:
MRF6S19100HR3
Hersteller:
NXP / Freescale
Beschreibung:
RF MOSFET Transistors HV6 WCDMA 22W NI780H
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
MRF6S19100HR3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
MRF6S19100HR3 DatasheetMRF6S19100HR3 Datasheet (P4-P6)MRF6S19100HR3 Datasheet (P7-P9)MRF6S19100HR3 Datasheet (P10-P11)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
NXP
Produktkategorie:
HF-MOSFET-Transistoren
RoHS:
Y
Polarität des Transistors:
N-Kanal
Technologie:
Si
Vds - Drain-Source-Durchbruchspannung:
68 V
Gewinnen:
16.1 dB
Ausgangsleistung:
22 W
Minimale Betriebstemperatur:
- 65 C
Maximale Betriebstemperatur:
+ 150 C
Montageart:
SMD/SMT
Paket / Koffer:
NI-780-3
Verpackung:
Spule
Aufbau:
Single
Höhe:
4.32 mm
Länge:
34.16 mm
Arbeitsfrequenz:
1.93 GHz to 1.99 GHz
Serie:
MRF6S19100H
Typ:
HF-Leistungs-MOSFET
Breite:
9.91 mm
Marke:
NXP / Freescale
Kanalmodus:
Erweiterung
Pd - Verlustleistung:
398 W
Produktart:
HF-MOSFET-Transistoren
Werkspackungsmenge:
250
Unterkategorie:
MOSFETs
Vgs - Gate-Source-Spannung:
- 0.5 V, 12 V
Vgs th - Gate-Source-Schwellenspannung:
3 V
Gewichtseinheit:
0.226635 oz
Tags
MRF6S19100HR, MRF6S19100H, MRF6S1910, MRF6S191, MRF6S19, MRF6S1, MRF6S, MRF6, MRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***escale Semiconductor
2 x N-CDMA Lateral N-Channel RF Power MOSFET, 1930-1990 MHz, 22 W Avg., 28 V
***ical
Trans RF MOSFET N-CH 68V 3-Pin NI-780 T/R
***i-Key
MOSFET RF N-CHAN 28V 22W NI-780
Teil # Mfg. Beschreibung Aktie Preis
MRF6S19100HR3
DISTI # MRF6S19100HR3-ND
NXP SemiconductorsFET RF 68V 1.99GHZ NI-780
Min Qty: 250
Container: Tape & Reel (TR)
Limited Supply - Call
    MRF6S19100HR3
    DISTI # MRF6S19100HR3
    Avnet, Inc.Trans MOSFET N-CH 68V 3-Pin NI-780 T/R - Bulk (Alt: MRF6S19100HR3)
    RoHS: Compliant
    Min Qty: 6
    Container: Bulk
    Americas - 0
    • 60:$59.1900
    • 30:$60.2900
    • 18:$62.5900
    • 12:$65.1900
    • 6:$67.7900
    MRF6S19100HR3
    DISTI # 841-MRF6S19100HR3
    NXP SemiconductorsRF MOSFET Transistors HV6 WCDMA 22W NI780H
    RoHS: Compliant
    0
      MRF6S19100HR3Freescale SemiconductorRF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
      RoHS: Compliant
      186
      • 1000:$61.2700
      • 500:$64.5100
      • 100:$67.1600
      • 25:$70.0400
      • 1:$75.3800
      MRF6S19100HR3NXP SemiconductorsStock142
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        Mfr.#: MRF6S18100NR1

        OMO.#: OMO-MRF6S18100NR1-NXP-SEMICONDUCTORS

        FET RF 68V 1.99GHZ TO2704
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        Mfr.#: MRF6S19060NR1

        OMO.#: OMO-MRF6S19060NR1-NXP-SEMICONDUCTORS

        FET RF 68V 1.93GHZ TO270-4
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        Mfr.#: MRF6S19200HR5

        OMO.#: OMO-MRF6S19200HR5-NXP-SEMICONDUCTORS

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        MRF6S19060MR1

        Mfr.#: MRF6S19060MR1

        OMO.#: OMO-MRF6S19060MR1-NXP-SEMICONDUCTORS

        FET RF 68V 1.93GHZ TO270-4
        MRF6S19100MR1

        Mfr.#: MRF6S19100MR1

        OMO.#: OMO-MRF6S19100MR1-NXP-SEMICONDUCTORS

        FET RF 68V 1.99GHZ TO270-4
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        2500
        Menge eingeben:
        Der aktuelle Preis von MRF6S19100HR3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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