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STW62NM60N

STW62NM60N
Mfr. #:
STW62NM60N
Hersteller:
STMicroelectronics
Beschreibung:
MOSFET N-CH 600V 65A TO-247
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
STW62NM60N Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
STW62NM60N Mehr Informationen STW62NM60N Product Details
Produkteigenschaft
Attributwert
Tags
STW6, STW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 600 V, 0.04 Ohm typ., 65 A MDmesh(TM) II Power MOSFET in a TO-247 package
***et
Trans MOSFET N-CH 600V 55A 3-Pin(3+Tab) TO-247 Tube
***(Formerly Allied Electronics)
MOSFET N-Channel 600V 65A TO247
***el Electronic
MOSFET N-Ch 600V 0.049 Ohm 55A MDmesh II FET
***r Electronics
Power Field-Effect Transistor, 55A I(D), 600V, 0.048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***S
French Electronic Distributor since 1988
***ark
Mosfet Transistor, N Channel, 51 A, 600 V, 0.047 Ohm, 10 V, 4 V Rohs Compliant: Yes
***icroelectronics
N-channel 600 V, 0.047 Ohm, 51 A TO-247 FDmesh(TM) II Power MOSFET (with fast diode)
***ure Electronics
N-Channel 600 V 60 mOhm Flange Mount FDmesh II Power Mosfet - TO-247
***ical
Trans MOSFET N-CH 600V 51A Automotive 3-Pin(3+Tab) TO-247 Tube
***r Electronics
Power Field-Effect Transistor, 51A I(D), 600V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***nell
MOSFET, N CH, 600V, 51A, TO 247; Transistor Polarity: N Channel; Continuous Drain Current Id: 51A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.047ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Powe
***icroelectronics
N-channel 600 V, 0.031 Ohm typ., 68 A MDmesh M2 Power MOSFET in TO-247 package
***ure Electronics
STW70N60 Series 600 V 0.040 Ohm Flange Mount N-Channel Power Mosfet - TO-247
***ark
MOSFET, N-CH, 600V, 68A, 150DEG C, 450W; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:68A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 68A I(D), 600V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***icroelectronics
N-channel 500 V, 0.035 Ohm typ., 68 A, MDmesh(TM) II Power MOSFET in TO-247 package
***r Electronics
Power Field-Effect Transistor, 68A I(D), 500V, 0.043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***ark
MOSFET, N-CH, 500V, 68A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:68A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
***emi
N-Channel Power MOSFET, SUPREMOS®, FAST, 600V, 76A, 36mΩ, TO-247
***ure Electronics
Single N-Channel 600 V 36 mOhm 285 nC 543 W Silicon Flange Mount Mosfet TO-247-3
***r Electronics
Power Field-Effect Transistor, 76A I(D), 600V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***nell
MOSFET,N CH,600V,76A,TO247; Transistor Polarity:N Channel; Continuous Drain Current Id:76A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.028ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:543W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011)
***rchild Semiconductor
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***ure Electronics
IPW60R041P6 Series 600 V 77.5 A CoolMOS™ P6 Power Transistor - TO-247-3
***ark
MOSFET, N-CH, 600V, 77.5A, 150DEG C/481W; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:77.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
***ineon SCT
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO247-3, RoHS
***nell
MOSFET, N-CH, 600V, 77.5A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 77.5A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.037ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 481W; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS P6 Series; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)
***ineon
Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles
***emi
N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 47 A, 62 mΩ, TO-247
***ure Electronics
FCH47N60N Series 600 V 47 A 62 mOhm N-Channel SuperMos Mosfet - TO-247-3
***r Electronics
Power Field-Effect Transistor, 47A I(D), 600V, 0.062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***nell
MOSFET,N CH,600V,47A,TO247; Transistor Polarity:N Channel; Continuous Drain Current Id:47A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.0515ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:368W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011)
***rchild Semiconductor
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
Teil # Mfg. Beschreibung Aktie Preis
STW62NM60N
DISTI # 497-13288-5-ND		STMicroelectronicsMOSFET N-CH 600V 65A TO-247
RoHS: Compliant
Min Qty: 1
Container: Tube		45In Stock
  • 30:$12.1717
  • 10:$13.0540
  • 1:$15.6100
STW62NM60N
DISTI # STW62NM60N		STMicroelectronicsTrans MOSFET N-CH 600V 55A 3-Pin(3+Tab) TO-247 Tube (Alt: STW62NM60N)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 570
  • 1000:€5.1900
  • 500:€5.2900
  • 100:€5.3900
  • 50:€5.4900
  • 25:€5.5900
  • 10:€5.7900
  • 1:€5.9900
STW62NM60N
DISTI # 48W6991		STMicroelectronicsPTD HIGH VOLTAGE0
  • 500:$10.9200
  • 250:$11.2600
  • 100:$12.8600
  • 50:$13.6100
  • 25:$15.1200
  • 10:$15.5400
  • 1:$16.6400
STW62NM60N
DISTI # 511-STW62NM60N		STMicroelectronicsMOSFET N-Ch 600V 0.049 Ohm 55A MDmesh II FET
RoHS: Compliant		0
    Bild Teil # Beschreibung
    STW62N65M5

    Mfr.#: STW62N65M5

    OMO.#: OMO-STW62N65M5

    		 MOSFET N-Ch 650V 46A Auto 0.041 Ohm MDMesh M5
    STW62N65M5

    Mfr.#: STW62N65M5

    OMO.#: OMO-STW62N65M5-STMICROELECTRONICS

    		 MOSFET N-CH 650V TO-247
    STW62NM60N

    Mfr.#: STW62NM60N

    OMO.#: OMO-STW62NM60N-STMICROELECTRONICS

    		 MOSFET N-CH 600V 65A TO-247
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    5500
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