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APT50GT120B2RG

APT50GT120B2RG
Mfr. #:
APT50GT120B2RG
Hersteller:
Microchip / Microsemi
Beschreibung:
IGBT Transistors FG, IGBT, 1200V, 50A, TO-247 T-MAX, RoHS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
APT50GT120B2RG Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
APT50GT120B2RG DatasheetAPT50GT120B2RG Datasheet (P4-P6)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Mikrochip
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Verpackung:
Rohr
Marke:
Mikrochip / Mikrosemi
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
1
Unterkategorie:
IGBTs
Tags
APT50GT1, APT50GT, APT50G, APT50, APT5, APT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
IGBT NPT MEDIUM FREQUENCY SINGLE 1200 V 50 A TO-247 MAX 3 T-MAX TUBE ROHS COMPLIANT: YES
***ure Electronics
APT50GT120x Series 1200 V 94 A Flange Mount Thunderbolt IGBT® - TO-247-3
***ical
Trans IGBT Chip N-CH 1.2KV 94A 3-Pin(3+Tab) T-MAX
*** Stop Electro
Insulated Gate Bipolar Transistor, 94A I(C), 1200V V(BR)CES, N-Channel, TO-247
***th Star Micro
Insulated Gate Bipolar Transistor - NPT Standard Speed
***S
French Electronic Distributor since 1988
***ical
Trans IGBT Chip N-CH 1200V 94A 379000mW 3-Pin(3+Tab) TO-247 Tube
***rochip
IGBT Fieldstop Low Frequency Single 1200 V 35 A TO-247
***ure Electronics
APT35GN120 Series 1200 V 94 A 379 W 220 nC NPT Field Stop IGBT - TO-247-3
***icroelectronics
Trench gate field-stop IGBT, M series 1200 V, 40 A low loss
***ical
Trans IGBT Chip N-CH 1200V 80A 468000mW 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, SINGLE, 1.2KV, 80A, TO-247-3; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.85V; Power Dissipation Pd: 468W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of
***ical
Trans IGBT Chip N-CH 1200V 100A 349000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
UPS / Solar 1200 V 100 A Flange Mount Ultra Field Stop IGBT - TO-247-3
***nell
IGBT, SINGLE, 1.2KV, 100A, TO-247-3; DC Collector Current: 100A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 349W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of
***ineon SCT
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247 package, TO247COPAK-3, RoHS
***ure Electronics
IRG7PH42UDPBF Series 1200 V 85 A Insulated Gate Bipolar Transistor - TO-247AC
***ment14 APAC
IGBT,N CH,DIODE,1200V,85A,TO-247AC; Transistor Type:IGBT; DC Collector Current:85A; Collector Emitter Voltage Vces:1.7V; Power Dissipation Pd:320W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:320W
***ark
Igbt Single Transistor, 90 A, 1.7 V, 385 W, 1.2 Kv, To-247Ac, 3 Rohs Compliant: Yes
***ical
Trans IGBT Chip N-CH 1200V 90A 385000mW 3-Pin(3+Tab) TO-247AC Tube
***(Formerly Allied Electronics)
1200V TRENCH IGBT FOR INDUSTRIAL MODULE, SIZE 4.2 (NO DIODE) | Infineon IRG7PH42UPBF
***ernational Rectifier
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247 package
***ure Electronics
IRG7PH42UPBF Series 1200 V 90 A Insulated Gate Bipolar Transistor - TO-247AC
***el Electronic
Temperature Sensors - PTC Thermistors 0603 (1608 Metric) 1 (Unlimited) Tape & Reel (TR) Surface Mount 470Ohm Thermistor PTC 470 Ohm 50% 2-Pin 0603 Surface Mount Solder Pad Paper T/R
***nell
IGBT,N CH,1200V,90A,TO-247AC; DC Collector Current: 90A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 385W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247AC; No. of Pins:
***ical
Trans IGBT Chip N-CH 1200V 80A 555000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
FGH40T120SMD Series 1200 V 80 A 555 W FS Trench IGBT -TO247-3
***rchild Semiconductor
Using innovative field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications.
Teil # Mfg. Beschreibung Aktie Preis
APT50GT120B2RG
DISTI # V36:1790_09096459		Microsemi CorporationTrans IGBT Chip N-CH 1.2KV 94A 3-Pin(3+Tab) T-MAX
RoHS: Compliant		0
  • 30000:$10.0900
  • 15000:$10.1000
  • 3000:$11.7400
  • 300:$15.5800
  • 30:$16.2800
APT50GT120B2RG
DISTI # APT50GT120B2RG-ND		Microsemi CorporationIGBT 1200V 94A 625W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		294In Stock
  • 500:$11.4918
  • 100:$13.4732
  • 25:$14.6620
  • 10:$15.8510
  • 1:$17.4400
APT50GT120B2RG
DISTI # APT50GT120B2RG		Microchip Technology Inc- Rail/Tube (Alt: APT50GT120B2RG)
RoHS: Compliant
Min Qty: 34
Container: Tube		Americas - 0
  • 340:$9.2900
  • 170:$9.4900
  • 102:$9.7900
  • 68:$10.0900
  • 34:$10.4900
APT50GT120B2RG
DISTI # APT50GT120B2RG		Microchip Technology Inc- Bulk (Alt: APT50GT120B2RG)
RoHS: Compliant
Min Qty: 34
Container: Bulk		Americas - 0
  • 340:$9.2900
  • 170:$9.4900
  • 102:$9.7900
  • 68:$10.0900
  • 34:$10.4900
APT50GT120B2RG
DISTI # 494-APT50GT120B2RG		Microchip Technology IncIGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequency - Single
RoHS: Compliant		50
  • 1:$16.2800
  • 10:$14.8000
  • 25:$13.6900
  • 50:$12.9500
  • 100:$12.4900
  • 250:$11.4000
  • 500:$10.6800
Bild Teil # Beschreibung
APT50GT120JU3

Mfr.#: APT50GT120JU3

OMO.#: OMO-APT50GT120JU3

 IGBT Modules DOR CC0053
APT50GT120JU2

Mfr.#: APT50GT120JU2

OMO.#: OMO-APT50GT120JU2

 IGBT Modules DOR CC0052
APT50GT60BRDQ2G

Mfr.#: APT50GT60BRDQ2G

OMO.#: OMO-APT50GT60BRDQ2G

 IGBT Transistors FG, IGBT-COMBI, 600V, TO-247, RoHS
APT50GT120B2RG

Mfr.#: APT50GT120B2RG

OMO.#: OMO-APT50GT120B2RG

 IGBT Transistors FG, IGBT, 1200V, 50A, TO-247 T-MAX, RoHS
APT50GT60BRG

Mfr.#: APT50GT60BRG

OMO.#: OMO-APT50GT60BRG

 IGBT Transistors FG, IGBT, 600V, TO-247, RoHS
APT50GT120B2RDQ2G

Mfr.#: APT50GT120B2RDQ2G

OMO.#: OMO-APT50GT120B2RDQ2G

 IGBT Transistors FG, IGBT-COMBI, 1200V, TO-247 T-MAX, RoHS
APT50GT120LRDQ2G

Mfr.#: APT50GT120LRDQ2G

OMO.#: OMO-APT50GT120LRDQ2G

 IGBT Transistors FG, IGBT, 1200V, TO-264, RoHS
APT50GT60BRDQ2G

Mfr.#: APT50GT60BRDQ2G

OMO.#: OMO-APT50GT60BRDQ2G-MICROSEMI

 IGBT Transistors
APT50GT120B2RG

Mfr.#: APT50GT120B2RG

OMO.#: OMO-APT50GT120B2RG-MICROSEMI

 Trans IGBT Chip N-CH 1.2KV 94A 3-Pin(3+Tab) T-MAX
APT50GT120LRG

Mfr.#: APT50GT120LRG

OMO.#: OMO-APT50GT120LRG-1190

 Neu und Original
Verfügbarkeit
Aktie:
50
Auf Bestellung:
2033
Menge eingeben:
Der aktuelle Preis von APT50GT120B2RG dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
16,28 $
16,28 $
10
14,80 $
148,00 $
25
13,69 $
342,25 $
50
12,95 $
647,50 $
100
12,49 $
1 249,00 $
250
11,40 $
2 850,00 $
500
10,68 $
5 340,00 $
1000
9,52 $
9 520,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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