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STL34N65M5

STL34N65M5
Mfr. #:
STL34N65M5
Hersteller:
STMicroelectronics
Beschreibung:
MOSFET N-channel 650 V, 0.99 Ohm typ., 22.5 A, MDmesh M5 Power MOSFET in a PowerFLAT 8x8 HV
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
STL34N65M5 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
STL34N65M5 Mehr Informationen STL34N65M5 Product Details
Produkteigenschaft
Attributwert
Hersteller:
STMicroelectronics
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerFLAT-8x8-HV-5
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
650 V
Id - Kontinuierlicher Drainstrom:
22.5 A
Rds On - Drain-Source-Widerstand:
120 mOhms
Vgs th - Gate-Source-Schwellenspannung:
4 V
Vgs - Gate-Source-Spannung:
25 V
Qg - Gate-Ladung:
62.5 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
150 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
MDmesh
Verpackung:
Spule
Serie:
STL34N65M5
Transistortyp:
1 N-Channel
Marke:
STMicroelectronics
Abfallzeit:
7.5 ns
Feuchtigkeitsempfindlich:
ja
Produktart:
MOSFET
Anstiegszeit:
8.7 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Tags
STL34, STL3, STL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 650 V, 0.99 Ohm typ., 22.5 A, MDmesh(TM) V Power MOSFET in a PowerFLAT 8x8 HV
***p One Stop
Trans MOSFET N-CH 650V 22.5A 4-Pin Power Flat EP T/R
***r Electronics
Power Field-Effect Transistor, 22.5A I(D), 650V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***i-Key
MOSFET N-CH 650V 3.2A PWRFLAT88
*** Services
CoC and 2-years warranty / RFQ for pricing
***icroelectronics
N-channel 650 V, 0.09 Ohm typ., 28 A MDmesh M5 Power MOSFET in D2PAK package
***ure Electronics
N-Channel 650 V 0.11 Ohm Surface Mount MDmesh™ V Power Mosfet - D2PAK
***ical
Trans MOSFET N-CH 650V 28A 3-Pin(2+Tab) D2PAK T/R
***ment14 APAC
MOSFET, N-CH, 650V, 28A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Source Voltage Vds:650V; On Resistance
***r Electronics
Power Field-Effect Transistor, 28A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, N-CH, 650V, 28A, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 28A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.09ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 190W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: MDmesh Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
***icroelectronics
N-channel 650 V, 0.075 Ohm typ., 22.5 A MDmesh M5 Power MOSFET in a PowerFLAT 8x8 HV package
***ure Electronics
N-Channel 650 V 86 mO 82 nC MDmesh™ M5 Power Mosfet - PowerFLAT 8x8HV
*** Source Electronics
MOSFET N-CH 650V 22.5A 4PWRFLAT / Low gate charge and input capacitance
***icroelectronics
N-channel 650 V, 0.09 Ohm typ., 22.5 A, MDmesh(TM) V Power MOSFET in PowerFLAT(TM) 8x8 HV package
***el Electronic
56800E 568xx Microcontroller IC 16-Bit 120MHz 80KB (40K x 16) SRAM 100-LQFP (14x14)
***et Europe
Trans MOSFET N-CH 650V 22.5A 4-Pin PowerFlat T/R
*** Electronic Components
MOSFET N-CH 650V 0.09Ohm 22.5A Mdmesh M5
***icroelectronics SCT
Power MOSFETs, 650V, 22.5A, PowerFLAT 8x8 HV, Tape and Reel
***r Electronics
Power Field-Effect Transistor, 22.5A I(D), 650V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***S
French Electronic Distributor since 1988
***ure Electronics
Single N-Channel 650 V 95 mOhm 45 nC CoolMOS™ Power Mosfet - D2PAK
***ark
Mosfet, N-Ch, 650V, 24A, To-263-3; Transistor Polarity:n Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.084Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
***ineon SCT
Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range, PG-TO263-3, RoHS
***ineon
Infineons new CoolMOS C7 series is a revolutionary step forward in technology, providing the worldss lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. | Summary of Features: 650V voltage; Revolutionary best-in-class R DS(on)/package; Reduced energy stored in output capacitance (Eoss); Lower gate charge Qg; Space saving through use of smaller packages or reduction of parts; 12 years manufacturing experience in superjunction technology | Benefits: Improved safety margin and suitable for both SMPS and solar inverter applications; Lowest conduction losses/package; Low switching losses; Better light load efficiency; Increasing power density; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; PC power
***ure Electronics
E-Series N-Channel 650 V 0.145 O 122 nC Surface Mount Power Mosfet - D2PAK
***et
Trans MOSFET N-CH 650V 24A 3-Pin(2+Tab) D2PAK
***nell
MOSFET, N-CH, 650V, 24A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.12ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:250W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V
***ark
MOSFET, N CH, 650V, 24A, D2PAK; Transistor Polarity:N Channel; Continuous Drain
***et
Trans MOSFET N-CH 650V 24A 3-Pin(2+Tab) D2PAK
***nell
MOSFET, N CH, 650V, 24A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.12ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:250W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
N-channel MDmesh V Power MOSFET
STMicroelectronics 550 and 650V MDmesh M5 series of super-junction Power MOSFETs offer outstanding RDS(on) values to significantly reduce losses in line-voltage PFC circuits and power supplies. This in turn enables new generations of electronic products offering greater energy savings, superior power density, and more compact applications. This new technology will help product designers tackle emerging challenges such as the high-efficiency targets of new eco-design directives, and will also benefit the renewable energy sector by saving vital watts normally lost in power-control modules. 
MDMesh™ N-Channel Power MOSFETs
STMicroelectronics' MDMesh™ N-Channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market. Key features include low input capacitance and gate charge, low gate input resistance, and best RDS(on)*Qg in the industry.Learn More
Teil # Mfg. Beschreibung Aktie Preis
STL34N65M5
DISTI # V72:2272_17703917		STMicroelectronicsTrans MOSFET N-CH 650V 22.5A 4-Pin Power Flat EP T/R
RoHS: Compliant		1758
  • 1000:$3.6510
  • 500:$3.8570
  • 250:$4.0970
  • 100:$4.3010
  • 25:$4.7310
  • 10:$4.9250
  • 1:$5.3280
STL34N65M5
DISTI # 497-15024-1-ND		STMicroelectronicsMOSFET N-CH 650V 3.2A PWRFLAT88
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    STL34N65M5
    DISTI # 497-15024-6-ND    		STMicroelectronicsMOSFET N-CH 650V 3.2A PWRFLAT88
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      STL34N65M5
      DISTI # 497-15024-2-ND      		STMicroelectronicsMOSFET N-CH 650V 3.2A PWRFLAT88
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape & Reel (TR)      		Temporarily Out of Stock
      • 3000:$3.7180
      STL34N65M5
      DISTI # 27018281      		STMicroelectronicsTrans MOSFET N-CH 650V 22.5A 4-Pin Power Flat EP T/R
      RoHS: Compliant      		1758
      • 1000:$3.6510
      • 500:$3.8570
      • 250:$4.0970
      • 100:$4.3010
      • 25:$4.7310
      • 10:$4.9250
      • 2:$5.3280
      STL34N65M5
      DISTI # STL34N65M5      		STMicroelectronicsTrans MOSFET N-CH 650V 22.5A 5-Pin Power Flat T/R - Tape and Reel (Alt: STL34N65M5)
      RoHS: Compliant
      Min Qty: 3000
      Container: Reel      		Americas - 0
      • 3000:$3.7900
      • 6000:$3.6900
      • 12000:$3.4900
      • 18000:$3.2900
      • 30000:$3.2900
      STL34N65M5
      DISTI # STL34N65M5      		STMicroelectronicsTrans MOSFET N-CH 650V 22.5A 5-Pin Power Flat T/R (Alt: STL34N65M5)
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape and Reel      		Europe - 0
      • 3000:€2.4900
      • 6000:€2.3900
      • 12000:€2.2900
      • 18000:€2.0900
      • 30000:€1.9900
      STL34N65M5
      DISTI # 511-STL34N65M5      		STMicroelectronicsMOSFET N-channel 650 V, 0.99 Ohm typ., 22.5 A, MDmesh M5 Power MOSFET in a PowerFLAT 8x8 HV
      RoHS: Compliant      		0
      • 1:$6.1900
      • 10:$5.6000
      • 25:$5.3400
      • 100:$4.6300
      • 250:$4.4300
      • 500:$4.0300
      • 1000:$3.5200
      • 3000:$3.3900
      STL34N65M5STMicroelectronics 339
        STL34N65M5
        DISTI # C1S730200824587        		STMicroelectronicsTrans MOSFET N-CH 650V 22.5A 5-Pin Power Flat T/R
        RoHS: Compliant        		1758
        • 250:$4.1150
        • 100:$4.3090
        • 25:$4.7770
        • 10:$4.9610
        • 1:$5.3280
        Bild Teil # Beschreibung
        STL34N65M5

        Mfr.#: STL34N65M5

        OMO.#: OMO-STL34N65M5

        		 MOSFET N-channel 650 V, 0.99 Ohm typ., 22.5 A, MDmesh M5 Power MOSFET in a PowerFLAT 8x8 HV
        STL34N65M5-CUT TAPE

        Mfr.#: STL34N65M5-CUT TAPE

        OMO.#: OMO-STL34N65M5-CUT-TAPE-1190

        		 Neu und Original
        STL34N65M5

        Mfr.#: STL34N65M5

        OMO.#: OMO-STL34N65M5-STMICROELECTRONICS

        		 MOSFET N-CH 650V 3.2A PWRFLAT88
        STL34NF06

        Mfr.#: STL34NF06

        OMO.#: OMO-STL34NF06-1190

        		 Neu und Original
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        2500
        Menge eingeben:
        Der aktuelle Preis von STL34N65M5 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        6,19 $
        6,19 $
        10
        5,60 $
        56,00 $
        25
        5,34 $
        133,50 $
        100
        4,63 $
        463,00 $
        250
        4,43 $
        1 107,50 $
        500
        4,03 $
        2 015,00 $
        1000
        3,52 $
        3 520,00 $
        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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