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IRF7853PBF

IRF7853PBF
Mfr. #:
IRF7853PBF
Hersteller:
Infineon / IR
Beschreibung:
MOSFET 100V 1 N-CH HEXFET 18mOhms 28nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF7853PBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF7853PBF DatasheetIRF7853PBF Datasheet (P4-P6)IRF7853PBF Datasheet (P7-P8)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SO-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
100 V
Id - Kontinuierlicher Drainstrom:
8.3 A
Rds On - Drain-Source-Widerstand:
14.4 mOhms
Vgs th - Gate-Source-Schwellenspannung:
4.9 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
28 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
2.5 W
Aufbau:
Single
Verpackung:
Rohr
Höhe:
1.75 mm
Länge:
4.9 mm
Transistortyp:
1 N-Channel
Breite:
3.9 mm
Marke:
Infineon / IR
Vorwärtstranskonduktanz - Min:
11 S
Abfallzeit:
6 ns
Produktart:
MOSFET
Anstiegszeit:
6.6 ns
Werkspackungsmenge:
3800
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
26 ns
Typische Einschaltverzögerungszeit:
13 ns
Teil # Aliase:
SP001566352
Gewichtseinheit:
0.017870 oz
Tags
IRF7853, IRF785, IRF78, IRF7, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 14.4 Milliohms;ID 8.3A;SO-8;PD 2.5W;gFS 11S
***ure Electronics
Single N-Channel 100 V 18 mOhm 28 nC HEXFET® Power Mosfet - SOIC-8
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 Package, SO8, RoHS
***p One Stop Global
Trans MOSFET N-CH 100V 8.3A 8-Pin SOIC T/R
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 8.3A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ment14 APAC
MOSFET, N, 100V, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:8.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):18mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4.9V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Cont Current Id @ 25°C:8.3A; Cont Current Id @ 70°C:6.6; Current Id Max:8.3A; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:66A; Rth:50; Termination Type:SMD; Voltage Vds:100V; Voltage Vds Typ:100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
Teil # Mfg. Beschreibung Aktie Preis
IRF7853PBF
DISTI # 26562393		Infineon Technologies AGTrans MOSFET N-CH 100V 8.3A 8-Pin SOIC T/R3417
  • 19:$0.5208
IRF7853PBF
DISTI # IRF7853PBF-ND		Infineon Technologies AGMOSFET N-CH 100V 8.3A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Tube		Limited Supply - Call
    IRF7853PBF
    DISTI # C1S322000486537    		Infineon Technologies AGTrans MOSFET N-CH 100V 8.3A 8-Pin SOIC T/R
    RoHS: Compliant    		3417
    • 1000:$0.8600
    • 500:$0.9300
    • 100:$1.0300
    • 50:$1.2300
    • 25:$1.3800
    • 5:$1.9000
    IRF7853PBF
    DISTI # IRF7853PBF    		Infineon Technologies AGTrans MOSFET N-CH 100V 8.3A 8-Pin SOIC - Rail/Tube (Alt: IRF7853PBF)
    RoHS: Compliant
    Min Qty: 3800
    Container: Tube    		Americas - 1605
      IRF7853PBF
      DISTI # 70017361      		Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 100V,RDS(ON) 14.4 Milliohms,ID 8.3A,SO-8,PD 2.5W,gFS 11S
      RoHS: Compliant      		0
      • 1:$1.7700
      • 10:$1.5600
      • 100:$1.3600
      • 500:$1.1800
      • 1000:$1.0400
      IRF7853PBF
      DISTI # 942-IRF7853PBF      		Infineon Technologies AGMOSFET 100V 1 N-CH HEXFET 18mOhms 28nC
      RoHS: Compliant      		3110
      • 1:$1.3600
      • 10:$1.1600
      • 100:$0.8870
      • 500:$0.7840
      • 1000:$0.6190
      • 2500:$0.5490
      • 10000:$0.5290
      IRF7853PBFTT Electronics ResistorsMOSFET Transistor, N-Channel, SO2890
      • 1830:$0.3850
      • 409:$0.4375
      • 1:$1.4000
      IRF7853PBFInternational RectifierMOSFET Transistor, N-Channel, SO848
      • 409:$0.4375
      • 72:$0.4900
      • 1:$1.4000
      IRF7853PBF
      DISTI # 6886888P      		Infineon Technologies AGMOSFET N-CHANNEL 100V 8.3A HEXFET SOIC8, TU40
      • 25:£0.8800
      • 100:£0.7700
      • 250:£0.7200
      • 500:£0.6800
      IRF7853PBFInternational Rectifier 
      RoHS: Compliant      		Europe - 285
        IRF7853PBF
        DISTI # 1298555RL        		Infineon Technologies AGMOSFET, N, 100V, SO-8
        RoHS: Compliant        		0
        • 1:$2.1600
        • 10:$1.8400
        IRF7853PBF
        DISTI # 1298555        		Infineon Technologies AGMOSFET, N, 100V, SO-8
        RoHS: Compliant        		0
        • 1:$2.1600
        • 10:$1.8400
        Bild Teil # Beschreibung
        NCV7344D13R2G

        Mfr.#: NCV7344D13R2G

        OMO.#: OMO-NCV7344D13R2G

        		 CAN Interface IC HS LP CANFD TRANSC (VIO)
        FDB13AN06A0

        Mfr.#: FDB13AN06A0

        OMO.#: OMO-FDB13AN06A0

        		 MOSFET N-Channel PowerTrench
        TPS7A5201WQRTKRQ1

        Mfr.#: TPS7A5201WQRTKRQ1

        OMO.#: OMO-TPS7A5201WQRTKRQ1-TEXAS-INSTRUMENTS

        		 Automotive 2A High-Accuracy Low-Noise Low-Dropout (LDO) Voltage Regulato
        FDB13AN06A0

        Mfr.#: FDB13AN06A0

        OMO.#: OMO-FDB13AN06A0-ON-SEMICONDUCTOR

        		 MOSFET N-CH 60V 62A TO-263AB
        LQM2HPN2R2MCHL

        Mfr.#: LQM2HPN2R2MCHL

        OMO.#: OMO-LQM2HPN2R2MCHL-1190

        		 Fixed Inductors 1008 2.2uH 20% 0.43A 0.44ohms
        NCV7344D13R2G

        Mfr.#: NCV7344D13R2G

        OMO.#: OMO-NCV7344D13R2G-ON-SEMICONDUCTOR

        		 High Speed Low Power CAN, CAN FD Transceive
        Verfügbarkeit
        Aktie:
        174
        Auf Bestellung:
        2157
        Menge eingeben:
        Der aktuelle Preis von IRF7853PBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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