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SIHG30N60E-E3

SIHG30N60E-E3
Mfr. #:
SIHG30N60E-E3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 600V Vds 30V Vgs TO-247AC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIHG30N60E-E3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHG30N60E-E3 DatasheetSIHG30N60E-E3 Datasheet (P4-P6)SIHG30N60E-E3 Datasheet (P7-P8)
ECAD Model:
Mehr Informationen:
SIHG30N60E-E3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-247AC-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
29 A
Rds On - Drain-Source-Widerstand:
125 mOhms
Vgs th - Gate-Source-Schwellenspannung:
4 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
85 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
250 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Serie:
E
Marke:
Vishay / Siliconix
Abfallzeit:
36 ns
Produktart:
MOSFET
Anstiegszeit:
32 ns
Werkspackungsmenge:
500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
63 ns
Typische Einschaltverzögerungszeit:
19 ns
Gewichtseinheit:
1.340411 oz
Tags
SIHG30N60E, SIHG30, SIHG3, SIHG, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, N CH, 600V, 29A, TO-247AC; Transistor Polarity:N Channel; Continuous Dra
***ure Electronics
E-Series N-Channel 600 V 0.125 O 130 nC Flange Mount Power Mosfet - TO-247AC
***et
Trans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-247AC
***o-Tech
MOSFET N-Channel 600V 29A TO247AC
***nell
MOSFET, N CH, 600V, 29A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.104ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:250W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-247AC; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Teil # Mfg. Beschreibung Aktie Preis
SIHG30N60E-E3
DISTI # SIHG30N60E-E3-ND		Vishay SiliconixMOSFET N-CH 600V 29A TO247AC
Min Qty: 1
Container: Tube		499In Stock
  • 100:$4.4850
  • 25:$5.1752
  • 10:$5.4740
  • 1:$6.1000
SIHG30N60E-E3
DISTI # SIHG30N60E-E3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-247AC - Rail/Tube (Alt: SIHG30N60E-E3)
RoHS: Not Compliant
Min Qty: 500
Container: Tube		Americas - 0
  • 5000:$2.8900
  • 3000:$2.9900
  • 2000:$3.0900
  • 1000:$3.1900
  • 500:$3.2900
SIHG30N60E-E3
DISTI # 781-SIHG30N60E-E3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-247AC
RoHS: Compliant		327
  • 1:$6.4400
  • 10:$5.3300
  • 100:$4.3900
  • 250:$4.2500
  • 500:$4.1900
  • 1000:$3.5900
  • 2500:$3.0500
SIHG30N60E-GE3
DISTI # 78-SIHG30N60E-GE3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-247AC
RoHS: Compliant		25
  • 1:$6.4400
  • 10:$5.3300
  • 100:$4.3900
  • 250:$4.2500
SIHG30N60E-E3Vishay Intertechnologies 100
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    Verfügbarkeit
    Aktie:
    327
    Auf Bestellung:
    2310
    Menge eingeben:
    Der aktuelle Preis von SIHG30N60E-E3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    6,44 $
    6,44 $
    10
    5,33 $
    53,30 $
    100
    4,39 $
    439,00 $
    250
    4,25 $
    1 062,50 $
    500
    4,19 $
    2 095,00 $
    1000
    3,59 $
    3 590,00 $
    2500
    3,05 $
    7 625,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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