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SIRA28BDP-T1-GE3

SIRA28BDP-T1-GE3
Mfr. #:
SIRA28BDP-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 30V Vds; 20/-16V Vgs PowerPAK SO-8
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIRA28BDP-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SIRA28BDP-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerPAK-SO-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
38 A
Rds On - Drain-Source-Widerstand:
7.5 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1.2 V
Vgs - Gate-Source-Spannung:
- 16 V, 20 V
Qg - Gate-Ladung:
14 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
17 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET; PowerPAK
Verpackung:
Spule
Transistortyp:
1 N-Channel
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
35 S
Abfallzeit:
5 ns
Produktart:
MOSFET
Anstiegszeit:
5 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
17 ns
Typische Einschaltverzögerungszeit:
10 ns
Tags
SIRA2, SIRA, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Teil # Mfg. Beschreibung Aktie Preis
SIRA28BDP-T1-GE3
DISTI # V72:2272_22989544		Vishay IntertechnologiesSIRA28BDP-T1-GE36000
  • 75000:$0.1655
  • 30000:$0.1675
  • 15000:$0.1694
  • 6000:$0.1713
  • 3000:$0.1733
  • 1000:$0.1890
  • 500:$0.2110
  • 250:$0.2344
  • 100:$0.2604
  • 50:$0.2894
  • 25:$0.3536
  • 10:$0.3929
  • 1:$0.5902
SIRA28BDP-T1-GE3
DISTI # SIRA28BDP-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 30V POWERPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		6040In Stock
  • 1000:$0.2289
  • 500:$0.2962
  • 100:$0.3770
  • 10:$0.5050
  • 1:$0.5900
SIRA28BDP-T1-GE3
DISTI # SIRA28BDP-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 30V POWERPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		6040In Stock
  • 1000:$0.2289
  • 500:$0.2962
  • 100:$0.3770
  • 10:$0.5050
  • 1:$0.5900
SIRA28BDP-T1-GE3
DISTI # SIRA28BDP-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 30V POWERPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		6000In Stock
  • 30000:$0.1673
  • 15000:$0.1765
  • 6000:$0.1895
  • 3000:$0.2026
SIRA28BDP-T1-GE3
DISTI # 32441727		Vishay IntertechnologiesSIRA28BDP-T1-GE36000
  • 30000:$0.1675
  • 15000:$0.1694
  • 6000:$0.1713
  • 3000:$0.1733
  • 1000:$0.1890
  • 500:$0.2110
  • 250:$0.2344
  • 100:$0.2604
  • 50:$0.2894
  • 41:$0.3536
SIRA28BDP-T1-GE3
DISTI # SIRA28BDP-T1-GE3		Vishay IntertechnologiesTransistor MOSFET N-CH 30V 38A 8-Pin PowerPAK SO (Alt: SIRA28BDP-T1-GE3)
RoHS: Compliant
Min Qty: 6000		Asia - 0
    SIRA28BDP-T1-GE3
    DISTI # SIRA28BDP-T1-GE3    		Vishay IntertechnologiesTransistor MOSFET N-CH 30V 38A 8-Pin PowerPAK SO (Alt: SIRA28BDP-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000    		Europe - 0
    • 30000:€0.1729
    • 18000:€0.1859
    • 12000:€0.2009
    • 6000:€0.2339
    • 3000:€0.3429
    SIRA28BDP-T1-GE3
    DISTI # 02AH2520    		Vishay IntertechnologiesMOSFET, N-CH, 38A, 30V, POWERPAK SO,Transistor Polarity:N Channel,Continuous Drain Current Id:38A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0061ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.4V,Power RoHS Compliant: Yes40
    • 1000:$0.2140
    • 500:$0.2770
    • 250:$0.3070
    • 100:$0.3370
    • 50:$0.3760
    • 25:$0.4150
    • 10:$0.4550
    • 1:$0.5860
    SIRA28BDP-T1-GE3
    DISTI # 78-SIRA28BDP-T1-GE3    		Vishay IntertechnologiesMOSFET 30V Vds,20/-16V Vgs PowerPAK SO-8
    RoHS: Compliant    		5890
    • 1:$0.5800
    • 10:$0.4500
    • 100:$0.3340
    • 500:$0.2740
    • 1000:$0.2120
    • 3000:$0.1930
    • 6000:$0.1810
    • 9000:$0.1690
    • 24000:$0.1600
    SIRA28BDP-T1-GE3
    DISTI # 3019117    		Vishay IntertechnologiesMOSFET, N-CH, 38A, 30V, POWERPAK SO
    RoHS: Compliant    		40
    • 1000:$0.2940
    • 500:$0.3920
    • 250:$0.4470
    • 100:$0.4940
    • 25:$0.7650
    • 5:$0.8930
    SIRA28BDP-T1-GE3
    DISTI # 3019117    		Vishay IntertechnologiesMOSFET, N-CH, 38A, 30V, POWERPAK SO40
    • 500:£0.2050
    • 250:£0.2280
    • 100:£0.2500
    • 25:£0.3570
    • 5:£0.3810
    Bild Teil # Beschreibung
    SIRA28BDP-T1-GE3

    Mfr.#: SIRA28BDP-T1-GE3

    OMO.#: OMO-SIRA28BDP-T1-GE3

    		 MOSFET 30V Vds; 20/-16V Vgs PowerPAK SO-8
    SIRA28BDP-T1-GE3

    Mfr.#: SIRA28BDP-T1-GE3

    OMO.#: OMO-SIRA28BDP-T1-GE3-VISHAY

    		 MOSFET N-CH 30V POWERPAK SO-8
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1988
    Menge eingeben:
    Der aktuelle Preis von SIRA28BDP-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,58 $
    0,58 $
    10
    0,45 $
    4,50 $
    100
    0,33 $
    33,40 $
    500
    0,27 $
    137,00 $
    1000
    0,21 $
    212,00 $
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