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FDD7N20TM

FDD7N20TM
Mfr. #:
FDD7N20TM
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET 200V N-CH MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDD7N20TM Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-252-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
200 V
Id - Kontinuierlicher Drainstrom:
5 A
Rds On - Drain-Source-Widerstand:
690 mOhms
Vgs - Gate-Source-Spannung:
30 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
43 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Höhe:
2.39 mm
Länge:
6.73 mm
Serie:
FDD7N20TM
Transistortyp:
1 N-Channel
Breite:
6.22 mm
Marke:
ON Semiconductor / Fairchild
Abfallzeit:
10 ns
Produktart:
MOSFET
Anstiegszeit:
30 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
13 ns
Typische Einschaltverzögerungszeit:
9 ns
Gewichtseinheit:
0.009184 oz
Tags
FDD7N20, FDD7N2, FDD7N, FDD7, FDD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel Power MOSFET, UniFETTM, 200 V, 5 A, 690 mΩ, DPAK
***ure Electronics
N-Channel 200 V 0.69 Ohm Surface Mount UniFET Mosfet TO-252-3
***ment14 APAC
MOSFET, N-CH, 200V, 5A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Source Voltage Vds:200V; On Resistance
***r Electronics
Power Field-Effect Transistor, 5A I(D), 200V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***el Electronic
PMIC - AC DC Converters, Offline Switchers 4 (72 Hours) 8-SMD (7 Leads), Gull Wing Tape & Reel (TR) Buck, Buck-Boost, Flyback Surface Mount -40°C~150°C TJ Yes Non-Isolated Current Limiting, Open Loop, Over Load, Over Temperature, Over VolConv AC-DC Single Buck/Buck-Boost/Flyback 85VAC to 265VAC 7-Pin SMD-8C T/R
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***emi
N-Channel Power MOSFET, UniFETTM, 200V, 4.5A, 800mΩ, DPAK
***ure Electronics
N-Channel 200 V 0.8 Ohm Surface Mount UniFET Mosfet DPAK
***nell
MOSFET, N CH, 200V, 4.5A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.6ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:40W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***emi
N-Channel Power MOSFET, UniFETTM, 250 V, 4.4 A, 1.1 Ω, DPAK
***ure Electronics
N-Channel 250 V 1.1 Ohm Surface Mount UniFET Mosfet DPAK
***ment14 APAC
MOSFET, N-CH, 250V, 4.4A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:4.4A; Source Voltage Vds:250V; On Resistance
***roFlash
Power Field-Effect Transistor, 4.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***nell
MOSFET, N TO-252 SMD; Transistor Polarity:N; Current, Id Cont:4.4A; Resistance, Rds On:1.1ohm; Case Style:DPAK; Termination Type:SMD; Current, Idm Pulse:18A; No. of Pins:2; Power Dissipation:50mW; Voltage, Vds Max:250V
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***emi
P-Channel Power MOSFET, QFET®, -200 V, -5.7 A, 690 mΩ, DPAK
*** Source Electronics
Trans MOSFET P-CH 200V 5.7A 3-Pin(2+Tab) DPAK T/R / MOSFET P-CH 200V 5.7A DPAK
***roFlash
Power Field-Effect Transistor, 5.7A I(D), 200V, 0.69ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:5.7mA; On Resistance, Rds(on):0.69ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:5V
***rchild Semiconductor
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
***th Star Micro
Transistor MOSFET N-CH 200V 4.8A 3-Pin (2+Tab) DPAK
***ure Electronics
Single N-Channel 200 V 0.8 Ohms Surface Mount Power Mosfet - TO-252
***SIT Distribution GmbH
Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:4.8A; On Resistance, Rds(on):800mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DPAK ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, 200V, 4.8A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:4.8A; Drain Source Voltage Vds:200V; On Resistance Rds(on):800mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:42W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:4.8A; Current Temperature:25°C; External Depth:10.5mm; External Length / Height:2.55mm; External Width:6.8mm; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:3°C/W; No. of Transistors:1; Package / Case:DPAK; Power Dissipation Pd:42W; Power Dissipation Pd:42W; Pulse Current Idm:19A; SMD Marking:IRFR220; Termination Type:SMD; Voltage Vds Typ:200V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***icroelectronics
N-channel 200 V, 0.65 Ohm, 5 A STripFET(TM) Power MOSFET in DPAK package
***el Electronic
MOSFET Transistor, N Channel, 2.5 A, 200 V, 650 mohm, 5 V, 2.5 V RoHS Compliant: Yes
***ure Electronics
N-Channel 200 V 0.7 O Surface Mount STripFET Power Mosfet - TO-252-3
*** Source Electronics
MOSFET N-CH 200V 5A DPAK / Trans MOSFET N-CH 200V 5A 3-Pin(2+Tab) DPAK T/R
***ark
N CH POWER MOSFET, STripFET, 200V, 5A, DPAK, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:5V; Power Dissipation:33W RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 5A I(D), 200V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***nell
MOSFET, N CH, 200V, 5A, DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.5A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.65ohm; Rds(on) Test Voltage Vgs: 5V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 33W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 5A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Voltage Vds Typ: 200V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 5V
***ure Electronics
Single N-Channel 200 V 0.8 Ohms Surface Mount Power Mosfet - TO-252
***SIT Distribution GmbH
Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***ark
Channel Type:n Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:4.8A; Transistor Mounting:surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Power Dissipation:42W; No. Of Pins:3Pins Rohs Compliant: No
Teil # Mfg. Beschreibung Aktie Preis
FDD7N20TM
DISTI # V36:1790_06300646		ON SemiconductorTrans MOSFET N-CH 200V 5A 3-Pin(2+Tab) DPAK T/R5000
  • 50000:$0.2086
  • 25000:$0.2116
  • 10000:$0.2205
  • 2500:$0.2284
FDD7N20TM
DISTI # V72:2272_06300646		ON SemiconductorTrans MOSFET N-CH 200V 5A 3-Pin(2+Tab) DPAK T/R775
  • 500:$0.2733
  • 250:$0.3037
  • 100:$0.3375
  • 25:$0.4689
  • 10:$0.5731
  • 1:$0.6950
FDD7N20TM
DISTI # FDD7N20TMCT-ND		ON SemiconductorMOSFET N-CH 200V 5A D-PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		4430In Stock
  • 1000:$0.2931
  • 500:$0.3664
  • 100:$0.4635
  • 10:$0.6050
  • 1:$0.6900
FDD7N20TM
DISTI # FDD7N20TMDKR-ND		ON SemiconductorMOSFET N-CH 200V 5A D-PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		4430In Stock
  • 1000:$0.2931
  • 500:$0.3664
  • 100:$0.4635
  • 10:$0.6050
  • 1:$0.6900
FDD7N20TM
DISTI # FDD7N20TMTR-ND		ON SemiconductorMOSFET N-CH 200V 5A D-PAK
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 25000:$0.2253
  • 12500:$0.2312
  • 5000:$0.2401
  • 2500:$0.2579
FDD7N20TM
DISTI # 33626957		ON SemiconductorTrans MOSFET N-CH 200V 5A 3-Pin(2+Tab) DPAK T/R5000
  • 2500:$0.2284
FDD7N20TM
DISTI # 22145543		ON SemiconductorTrans MOSFET N-CH 200V 5A 3-Pin(2+Tab) DPAK T/R5000
  • 2500:$0.1885
FDD7N20TM
DISTI # 27471822		ON SemiconductorTrans MOSFET N-CH 200V 5A 3-Pin(2+Tab) DPAK T/R775
  • 31:$0.6950
FDD7N20TM
DISTI # 30611075		ON SemiconductorTrans MOSFET N-CH 200V 5A 3-Pin(2+Tab) DPAK T/R530
  • 35:$0.7350
FDD7N20TM
DISTI # FDD7N20TM		ON SemiconductorTrans MOSFET N-CH 200V 5A 3-Pin(2+Tab) DPAK T/R (Alt: FDD7N20TM)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 0
  • 125000:$0.2415
  • 62500:$0.2455
  • 25000:$0.2540
  • 12500:$0.2630
  • 7500:$0.2728
  • 5000:$0.2833
  • 2500:$0.2946
FDD7N20TM
DISTI # FDD7N20TM		ON SemiconductorTrans MOSFET N-CH 200V 5A 3-Pin(2+Tab) DPAK T/R (Alt: FDD7N20TM)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 25000:€0.1829
  • 15000:€0.1969
  • 10000:€0.2129
  • 5000:€0.2319
  • 2500:€0.2839
FDD7N20TM
DISTI # FDD7N20TM		ON SemiconductorTrans MOSFET N-CH 200V 5A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FDD7N20TM)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$0.2199
  • 15000:$0.2249
  • 10000:$0.2279
  • 5000:$0.2309
  • 2500:$0.2319
FDD7N20TM
DISTI # 31Y1361		ON SemiconductorMOSFET, N-CH, 200V, 5A, TO-252AA-3,Transistor Polarity:N Channel,Continuous Drain Current Id:5A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.58ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Product Range:- RoHS Compliant: Yes3197
  • 1000:$0.3160
  • 500:$0.3380
  • 250:$0.3610
  • 100:$0.3830
  • 50:$0.4460
  • 25:$0.5090
  • 10:$0.5720
  • 1:$0.6870
FDD7N20TM
DISTI # 52M3161		ON SemiconductorMOSFET Transistor, N Channel, 5 A, 200 V, 0.58 ohm, 10 V, 5 V0
  • 25000:$0.2220
  • 10000:$0.2290
  • 2500:$0.2380
  • 1:$0.2390
FDD7N20TM
DISTI # 512-FDD7N20TM		ON SemiconductorMOSFET 200V N-CH MOSFET
RoHS: Compliant		8660
  • 1:$0.6400
  • 10:$0.5260
  • 100:$0.3390
  • 1000:$0.2720
FDD7N20TMFairchild Semiconductor CorporationPOWER FIELD-EFFECT TRANSISTOR, 5A I(D), 200V, 0.69OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252AA2500
  • 795:$0.2250
  • 168:$0.2520
  • 1:$0.7200
FDD7N20TMFairchild Semiconductor CorporationPOWER FIELD-EFFECT TRANSISTOR, 5A I(D), 200V, 0.69OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252AA200
  • 112:$0.4500
  • 29:$0.5400
  • 1:$0.9000
FDD7N20TMFairchild Semiconductor Corporation 250
    FDD7N20TM
    DISTI # 2453852    		ON SemiconductorMOSFET, N-CH, 200V, 5A, TO-252AA-32617
    • 500:£0.2290
    • 250:£0.2470
    • 100:£0.2640
    • 10:£0.4540
    • 1:£0.5700
    FDD7N20TM
    DISTI # 2453852    		ON SemiconductorMOSFET, N-CH, 200V, 5A, TO-252AA-3
    RoHS: Compliant    		3192
    • 2500:$0.4110
    • 1000:$0.4190
    • 100:$0.5220
    • 10:$0.8090
    • 1:$0.9840
    FDD7N20TM
    DISTI # 2453852RL    		ON SemiconductorMOSFET, N-CH, 200V, 5A, TO-252AA-3
    RoHS: Compliant    		0
    • 2500:$0.4110
    • 1000:$0.4190
    • 100:$0.5220
    • 10:$0.8090
    • 1:$0.9840
    Bild Teil # Beschreibung
    FQD7P20TM

    Mfr.#: FQD7P20TM

    OMO.#: OMO-FQD7P20TM

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    OMO.#: OMO-SN74LV4051ATPWRQ1

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    OMO.#: OMO-TMS320F28379DPTPS

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    Mfr.#: SN6501DBVR

    OMO.#: OMO-SN6501DBVR

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    Mfr.#: US1M-13-F

    OMO.#: OMO-US1M-13-F

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    RC0402FR-0710KL

    Mfr.#: RC0402FR-0710KL

    OMO.#: OMO-RC0402FR-0710KL

    		 Thick Film Resistors - SMD 10K OHM 1%
    CC0603KRX5R8BB105

    Mfr.#: CC0603KRX5R8BB105

    OMO.#: OMO-CC0603KRX5R8BB105

    		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 1.0uF 25V X5R 10%
    KTF101B475M43EHT00

    Mfr.#: KTF101B475M43EHT00

    OMO.#: OMO-KTF101B475M43EHT00

    		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 4.7uF 100V 20% X7R 1000 Temp Cycles
    FQD7P20TM

    Mfr.#: FQD7P20TM

    OMO.#: OMO-FQD7P20TM-ON-SEMICONDUCTOR

    		 MOSFET P-CH 200V 5.7A DPAK
    TMS320F28379DPTPS

    Mfr.#: TMS320F28379DPTPS

    OMO.#: OMO-TMS320F28379DPTPS-TEXAS-INSTRUMENTS

    		 Microcontrollers - MCU 32-bit Microcontrollers - MCU Soprano
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1991
    Menge eingeben:
    Der aktuelle Preis von FDD7N20TM dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,64 $
    0,64 $
    10
    0,53 $
    5,26 $
    100
    0,34 $
    33,90 $
    1000
    0,27 $
    272,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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